Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Francisco J. Manjón"'
Autor:
Pablo Botella, Francesco Enrichi, Alberto Vomiero, Juan E. Muñoz-Santiuste, Alka B. Garg, Ananthanarayanan Arvind, Francisco J. Manjón, Alfredo Segura, Daniel Errandonea
Publikováno v:
ACS Omega, Vol 5, Iss 5, Pp 2148-2158 (2020)
Externí odkaz:
https://doaj.org/article/c0ea7d16e89c467e90fdf4de3c4a8baf
Autor:
Juan C. Castro-Palacio, Luisberis Velazquez, José A. Gómez-Tejedor, Francisco J. Manjón, Juan A. Monsoriu
Publikováno v:
Revista Brasileira de Ensino de Física, Vol 36, Iss 2
The acceleration sensor of a smartphone is used for the study of the uniform and uniformly accelerated circular motions in two experiments. Data collected from both experiments are used for obtaining the angular velocity and the angular acceleration,
Externí odkaz:
https://doaj.org/article/2766318ec4cc406fbb74d9d01a61021f
Autor:
Teng Zheng, Marcin Runowski, Plácida Rodríguez-Hernández, Alfonso Muñoz, Francisco J. Manjón, Małgorzata Sójka, Markus Suta, Eugeniusz Zych, Stefan Lis, Víctor Lavín
Publikováno v:
Acta Materialia. 231:117886
Autor:
Juan A, Sans, Rosario, Vilaplana, E Lora, da Silva, Catalin, Popescu, Vanesa P, Cuenca-Gotor, Adrián, Andrada-Chacón, Javier, Sánchez-Benitez, Oscar, Gomis, André L J, Pereira, Plácida, Rodríguez-Hernández, Alfonso, Muñoz, Dominik, Daisenberger, Braulio, García-Domene, Alfredo, Segura, Daniel, Errandonea, Ravhi S, Kumar, Oliver, Oeckler, Philipp, Urban, Julia, Contreras-García, Francisco J, Manjón
Publikováno v:
Inorganic chemistry. 59(14)
High pressure X-ray diffraction, Raman scattering, and electrical measurements, together with theoretical calculations, which include the analysis of the topological electron density and electronic localization function, evidence the presence of an i
Autor:
Pablo, Botella, Francesco, Enrichi, Alberto, Vomiero, Juan E, Muñoz-Santiuste, Alka B, Garg, Ananthanarayanan, Arvind, Francisco J, Manjón, Alfredo, Segura, Daniel, Errandonea
Publikováno v:
ACS Omega
We explore the potential of Tb- and Yb-doped InVO4, InTaO4, and InNbO4 for applications as phosphors for light-emitting sources. Doping below 0.2% barely change the crystal structure and Raman spectrum but provide optical excitation and emission prop
Autor:
Luis Tuset-Sanchis, Juan C Castro-Palacio, José A Gómez-Tejedor, Francisco J Manjón, Juan A Monsoriu
Publikováno v:
Physics Education; Sep2015, Vol. 50 Issue 5, p1-1, 1p