Zobrazeno 1 - 10
of 46
pro vyhledávání: '"Francisco J. García-Sánchez"'
Autor:
Francisco J. García Sánchez
Publikováno v:
Cuadernos de Investigación Urbanística, Vol 0, Iss 122 (2019)
La integración de la adaptación al cambio climático en la planificación de los usos del suelo, así como la evaluación de este proceso, se han situado de forma preferente en las políticas urbanas y en los ámbitos de gestión de las ciudades. L
Externí odkaz:
https://doaj.org/article/6e2bb63f9e3a4f5685fe0abcf8c961f6
Publikováno v:
IEEE Transactions on Electron Devices. 68:4813-4818
We present and discuss explicit closed-form expressions for the saturation drain current of short-channel metal–oxide–semiconductor field-effect transistors (MOSFETs) with gate oxide and interface-trapped charges, and including carrier velocity s
Modeling of Thin-Film Lateral SOI PIN Diodes with an Alternative Multi-Branch Explicit Current Model
Autor:
Marcelo Antonio Pavanello, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Michelly de Souza, Denis Flandre, Lugo-Muñoz
Publikováno v:
Scopus-Elsevier
We propose the use of an alternative multi-exponential model to describe multiple conduction mechanisms in thin-film SOI PIN diodes with parasitic series resistance over a wide operating temperature range, from 90 to 390 K. This alternative multi-exp
Autor:
Ching-Sung Ho, D. C. Lugo Muñoz, Juan Muci, Rodrigo T. Doria, A. D. Latorre Rey, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Marcelo Antonio Pavanello, Juin J. Liou
Publikováno v:
Journal of Integrated Circuits and Systems. 5:103-109
A MOSFET model parameters extraction procedure that overcomes the difficulties of separating the effects of source-and-drain series resistance and mobility degradation factor is presented. Instead of the conventional direct fitting, the present proce
Autor:
Adelmo Ortiz-Conde, Carlos Ávila-Avendaño, Manuel A. Quevedo-López, Francisco J. García-Sánchez
Publikováno v:
Solid-State Electronics. 195:108403
Publikováno v:
2021 IEEE Latin America Electron Devices Conference (LAEDC).
This article reviews and appraises various fitting parameter extraction methods for solar cells modeled with 5 parameters. The current of illuminated photovoltaic panels and solar cells are customarily described by the single diode model, which conta
Autor:
Adelmo Ortiz-Conde, Carlos Ávila-Avendaño, Jesús A. Caraveo-Frescas, Manuel A. Quevedo-López, Francisco J. García-Sánchez
Publikováno v:
Solid-State Electronics. 188:108218
Publikováno v:
Solid-State Electronics. 144:33-38
A new integration method is presented for the extraction of the parameters of a single exponential diode model with series resistance from the measured forward I-V characteristics. The extraction is performed using auxiliary functions based on the in
Autor:
Fabian Zarate-Rincon, Adelmo Ortiz-Conde, Reydezel Torres-Torres, Juin J. Liou, Roberto S. Murphy-Arteaga, Francisco J. García-Sánchez, Andrea Sucre-González
Publikováno v:
Microelectronics Reliability. 69:1-16
The performance of modern MOSFETs is limited by the presence of parasitic series resistances and mobility degradation. This article reviews and assesses 18 of the extraction methods currently used to determine the values of parasitic series resistanc
Autor:
Gonzalo del Pozo, Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Denise Lugo-Muñoz, Beatriz Romero, B. Arredondo, Juin J. Liou
Publikováno v:
Facta universitatis - series: Electronics and Energetics. 30:327-350
This article reviews and appraises the dc lumped-parameter equivalent circuit models that have been proposed so far for representing some types of solar cells that can exhibit under certain circumstances a detrimental S-shaped concave deformation wit