Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Francisco J. García Ruiz"'
Autor:
Fabio Murru, Francisco J. Romero, Roberto Sánchez-Mudarra, Francisco J. García Ruiz, Diego P. Morales, Luis Fermín Capitán-Vallvey, Alfonso Salinas-Castillo
Publikováno v:
Nanomaterials, Vol 10, Iss 5, p 825 (2020)
A portable reconfigurable platform for hemoglobin determination based on inner filter quenching of room-temperature phosphorescent carbon dots (CDs) in the presence of H2O2 is described. The electronic setup consists of a light-emitting diode (LED) a
Externí odkaz:
https://doaj.org/article/1f0953e59a4748aea5e10ec958f0ba26
Autor:
Francisco J. Romero, Almudena Rivadeneyra, Noel Rodriguez, Encarnación Castillo, Francisco J García-Ruiz, Victor Toral, Diego P. Morales
Publikováno v:
Digibug. Repositorio Institucional de la Universidad de Granada
instname
Sensors and Actuators A: Physical
instname
Sensors and Actuators A: Physical
This work presents a complete temperature sensing solution based on a conformal laser-reduced graphene-oxide temperature transducer acting as thermistor. The process to implement the temperature-sensitive element is described in detail; from the raw
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4f73939a913806c52166c66c59daeee3
http://hdl.handle.net/10481/71991
http://hdl.handle.net/10481/71991
Autor:
Francisco Jiménez-Molinos, Noel Rodriguez, Francisco Gamiz, Francisco J García-Ruiz, C. Sampedro, Juan Bautista Roldán, Andres Godoy
Publikováno v:
IEEE Transactions on Electron Devices. 57:2925-2933
A new analytical model is presented for the inversion charge of surrounding-gate transistors (SGTs). Quantum effects are taken into account by means of a modified capacitance model that includes the inversion charge centroid and a correction to the t
Autor:
Vihar P. Georgiev, Carlos Sampedro, Asen Asenov, Luca Donetti, Andres Godoy, Ewan Towie, Salvatore Maria Amoroso, Francisco J García-Ruiz, Francisco Gamiz, C. Riddet
Publikováno v:
2014 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
In this paper we present the development of a 3D Multi Subband Ensemble Monte Carlo (3DMSB-EMC) tool targeting the simulation of nanoscaled FinFETs and nanowire transistors. In order to deliver computational efficiency, we have developed a self-consi
Autor:
Francisco Gamiz, Luca Donetti, Salvatore Maria Amoroso, Craig Riddet, Andres Godoy, Ewan Towiez, Carlos Sampedro, Asen Asenov, Vihar P. Georgiev, Francisco J García-Ruiz
Publikováno v:
2015 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
The need for an accurate simulation of non-planar devices such as FinFETs and nanowire based FETs, including a\ud full quantun treatment of transversal two-dimensional confinement, motivated the development of a three-dimensional MultiSubband Ensembl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::dae7391530c0dbefb6b598dbd0fa8bf8