Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Francis Wiser"'
Autor:
Fanfan Meng, Alexander Y. Piggott, Ion E. Opris, Christopher Rogers, Andrew J. Compston, Alexander Gondarenko, Graham T. Reed, Remus Nicolaescu, Xia Chen, Steven A. Fortune, Robert Francis Wiser, David J. Thomson
Accurate 3D imaging is essential for machines to map and interact with the physical world. While numerous 3D imaging technologies exist, each addressing niche applications with varying degrees of success, none have achieved the breadth of applicabili
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3cda87a0c487e841470ce3e43c365393
http://arxiv.org/abs/2008.02411
http://arxiv.org/abs/2008.02411
Autor:
Suresh Sridaran, Sean Korhummel, Richard C. Ruby, Kannan Aryaperumal Sankaragomathi, Robert Francis Wiser, R. Parker, L. Callaghan
Publikováno v:
2019 IEEE International Ultrasonics Symposium (IUS).
Quartz crystals have dominated the timing market for the last 70 years. FBAR technology is poised to replace quartz for many high frequency applications. Integration of the ultra-small form factor of the microcap’d FBAR into the SoC BGA packages cu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::502b7f94ff309c5393fede806d2eb0ce
https://doi.org/10.1109/ultsym.2019.8925950
https://doi.org/10.1109/ultsym.2019.8925950
Publikováno v:
CICC
A tunable, high-Q RF filter suitable for wireless transmitters has been implemented in a standard digital 0.18-mum CMOS technology. Active circuits are used to enhance the Q of two independent LC resonators, which are cascaded to form a wide bandwidt
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba2d129c8d559dd4a1546e271e2ca140
https://doi.org/10.1109/jssc.2009.2022920
https://doi.org/10.1109/jssc.2009.2022920
Publikováno v:
Journal of Microelectromechanical Systems. 14:567-578
This manuscript is the first of a two-part series describing the fabrication and testing of MHz frequency, polycrystalline silicon-carbide (poly-SiC) micromechanical resonators made from films deposited by atmospheric-pressure chemical-vapor depositi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c1f357328dd9bb319740f3b17e60db87
https://doi.org/10.1109/jmems.2005.844747
https://doi.org/10.1109/jmems.2005.844747
Publikováno v:
Journal of Microelectromechanical Systems. 14:579-589
This manuscript is the second of a two part series describing the fabrication and testing of megahertz frequency, polycrystalline silicon-carbide (poly-SiC) micromechanical resonators made from films deposited by atmospheric pressure chemical vapor d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::28df1e625fc24703684da63187e7c214
https://doi.org/10.1109/jmems.2005.844748
https://doi.org/10.1109/jmems.2005.844748
Publikováno v:
Chest. 150:1028A
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d219630eab891710dae78a112482fe
https://doi.org/10.1016/j.chest.2016.08.1134
https://doi.org/10.1016/j.chest.2016.08.1134
Autor:
Jeffery M Gilbert, Xiang Guan, Robert Francis Wiser, Steve Lo, Mark Graham Forbes, Mcelwee Patrick Thomas, James R. Parker, Jon R Tani, Michael Q Gordon, Sohrab Emami, Ershad Ali, C.H. Doan
Publikováno v:
ISSCC
Recent advances in silicon technology, mm-Wave integrated circuit/antenna/package design, and beam-forming techniques at 60GHz, together with the emergence of suitable wireless standards, have enabled consumer electronics products to support wireless
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::655022735c0460171e01e15c5d146b16
https://doi.org/10.1109/isscc.2011.5746265
https://doi.org/10.1109/isscc.2011.5746265
Publikováno v:
TRANSDUCERS '03. 12th International Conference on Solid-State Sensors, Actuators and Microsystems. Digest of Technical Papers (Cat. No.03TH8664).
Vertically-actuated micromechanical resonators operating at MHz frequencies were fabricated from phosphorus-doped polycrystalline silicon carbide (poly-SiC) films. The films were deposited on thin polysilicon sacrificial layers by atmospheric pressur
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::db64cb91f16a3038ec3e19e5fc4a2ab4
https://doi.org/10.1109/sensor.2003.1216978
https://doi.org/10.1109/sensor.2003.1216978
Publikováno v:
MRS Proceedings. 741
Polycrystalline silicon carbide (poly-SiC) films were deposited by atmospheric pressure chemical vapor deposition (APCVD) at epitaxial growth temperatures on planar, 100 nm-thick polysilicon sacrificial layers using two recipes that included or exclu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dd42e1c4d7925c99b65974fe0b70a603
https://doi.org/10.1557/proc-741-j4.3
https://doi.org/10.1557/proc-741-j4.3