Zobrazeno 1 - 10
of 70
pro vyhledávání: '"Francis Poingt"'
Autor:
R. Guillamet, Romain Brenot, M. N. Ngo, Christophe Gosset, N. Lagay, Hoang Trung Nguyen, Q. Deniel, Francis Poingt, Didier Erasme, Jean Decobert, Naveena Genay
Publikováno v:
Journal of Lightwave Technology. 31:232-238
We report, for the first time, a transmission experiment over standard fiber at 1.55 μ m using an electroabsorption modulated laser (EML) integrated with a semiconductor optical amplifier (SOA). We show clearly that negative pre-chirped signals can
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::391772d3d8347c3dd0138c8e4095ee6a
https://doi.org/10.1109/jlt.2012.2227946
https://doi.org/10.1109/jlt.2012.2227946
Publikováno v:
IEEE Photonics Technology Letters. 25:190-193
A performance comparison of single- and two-section reflective semiconductor optical amplifiers (RSOAs), used as remote modulators for the transport of IEEE 802.11n type signals at 0.3 GHz is reported. The two-section RSOA yields higher link gain and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f8bd92a05e385aadb103442d9cab4cff
https://doi.org/10.1109/lpt.2012.2230321
https://doi.org/10.1109/lpt.2012.2230321
Autor:
Francois Lelarge, Beatrice Dagens, S. Bonnefont, B. Rousseau, F. Lozes-Dupuy, Mathieu Boutillier, Alain Accard, Dalila Make, Olivier Gauthier-Lafaye, O. Le Gouezigou, Francis Poingt, Frederic Pommereau
Publikováno v:
IEEE Transactions on Nuclear Science. 55:2243-2247
Quantum dash lasers were irradiated for the first time, using 31-MeV protons. These novel structures, which show promising performances for 1.55 mum optical communications exhibit better robustness to radiation than quantum well lasers.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5470c1f370e6c0ac45413a1f92c8fe70
https://doi.org/10.1109/tns.2008.2000848
https://doi.org/10.1109/tns.2008.2000848
Autor:
Lionel Le Gouezigou, Romain Brenot, Francois Lelarge, Odile Le Gouezigou, Francis Poingt, Guang-Hua Duan, Frederic Pommereau, Olivier Drisse, Hélène Sillard-Debrégeas, Estelle Derouin
Publikováno v:
Japanese Journal of Applied Physics. 46:7741-7744
We fabricate tunable semiconductor lasers with two coupled photonic crystal cavities that allow up to 46 nm tuning range with a side-mode suppression ratio greater than 30 dB. The effect of design parameters on device performances is discussed. In pa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d83f72432a8c26ba43ca313b7786534
https://doi.org/10.1143/jjap.46.7741
https://doi.org/10.1143/jjap.46.7741
Autor:
Francis Poingt, Christophe Kazmierski, N. Lagay, Jean Decobert, C. Cuisin, Abderrahim Ramdane, Nicolas Dupuis, Pierre-Yves Lagrée
Publikováno v:
IEE Proceedings - Optoelectronics. 153:276-279
Thickness and composition profiles of AlGaInAs-based layers grown by low-pressure metal organic vapour phase epitaxy in the regime of selective area growth (SAG) have been modelled and measured experimentally. Experimental thickness profiles of InP,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a0b156efbf55f39dd4f5f13812fe97d3
https://doi.org/10.1049/ip-opt:20060049
https://doi.org/10.1049/ip-opt:20060049
Autor:
O. Legouezigou, Francois Lelarge, Xavier Checoury, Frederic Pommereau, Philippe Boucaud, C. Cuisin, S. Bonnefont, F. Lozes-Dupuy, Francis Poingt, D. Mulin, Anne Talneau, Olivier Gauthier-Lafaye, Olivier Drisse, E. Derouin, L. Legouezigou, J. Valentin, J.-M. Lourtioz, Guang-Hua Duan
Publikováno v:
IEEE Journal of Selected Topics in Quantum Electronics. 11:1180-1186
Lasing of triangular and square lattice photonic crystal, waveguides on InP substrate is investigated around the 1.5-/spl mu/m wavelength by optical pumping. The lattice period of the fabricated structures is varied over a very large scale, thereby a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ebd26685bf48baff2bfe2fa326b3345
https://doi.org/10.1109/jstqe.2005.853751
https://doi.org/10.1109/jstqe.2005.853751
Autor:
S. Messaoudene, Gunther Roelkens, Christophe Jany, D. Van Thourhout, Marco Lamponi, G. de Valicourt, Francois Lelarge, Francis Poingt, Shahram Keyvaninia, J-M. Fedeli, Guang-Hua Duan
Publikováno v:
IEEE PHOTONICS TECHNOLOGY LETTERS
IEEE Photonics Technology Letters
IEEE Photonics Technology Letters
We report on a heterogeneously integrated InP/silicon-on-insulator (SOI) laser source realized through divinylsiloxane-bis-benzocyclobutene (DVS-BCB) wafer bonding. The hybrid lasers present several new features. The III-V waveguide has a width of on
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::022fb375437037a3f8bd62d6d5557694
https://doi.org/10.1109/lpt.2011.2172791
https://doi.org/10.1109/lpt.2011.2172791
Autor:
G. de Valicourt, Frederic Pommereau, Francis Poingt, Marco Lamponi, Philippe Chanclou, Manuel Violas, G-H Duan, Romain Brenot
Publikováno v:
IEEE Photonics Technology Letters. 22:1425-1427
We demonstrate that the use of an optimized bi-electrode reflective semiconductor optical amplifier as remote modulator reduces the chirp. Our simulation shows that the chirp reduction is due to the carrier density profile in multi-electrode reflecti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::221c45f4aabb18faedcbf7d1d5ba9f21
https://doi.org/10.1109/lpt.2010.2062496
https://doi.org/10.1109/lpt.2010.2062496
Autor:
Beatrice Dagens, P. Resneau, O. Le Gouezigou, Alain Accard, G-H Duan, J.-G. Provost, L. Le Gouezigou, Michel Calligaro, Frederic Pommereau, C. Dernazaretian, B. Rousseau, M. Carbonnelle, Michel Krakowski, F. van Dijk, Dalila Make, Francis Poingt, Francois Lelarge
Publikováno v:
IEEE Photonics Technology Letters. 20:903-905
The modulation bandwidth has been identified as a specific limitation of quantum-dot or quantum-dash (QDash) lasers for direct modulation application. Solutions using tunnel injection and p-doping have already been demonstrated to increase the modula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2e99c5c202333c2bb94ac8c075c35765
https://doi.org/10.1109/lpt.2008.922349
https://doi.org/10.1109/lpt.2008.922349
Publikováno v:
IEEE Photonics Technology Letters. 17:1369-1371
Self-organized InAs quantum-dot (QD) lasers emitting at 1.5 /spl mu/m were grown by gas source molecular beam epitaxy on (100) InP substrates. Room temperature continuous-wave (CW) operation of QD-based buried ridge stripe lasers is reported. We inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2b8f0e918c9144c77be7614a47804fb6
https://doi.org/10.1109/lpt.2005.848279
https://doi.org/10.1109/lpt.2005.848279