Zobrazeno 1 - 10
of 14
pro vyhledávání: '"Francis Poh"'
Publikováno v:
Journal of Magnetism and Magnetic Materials. 485:174-179
Domain wall injection by electric means is an energy exhausting process. This process is conventionally carried out by sending a current pulse through a stripline which generates an Oersted field to locally switch the magnetization in a magnetic wire
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::65100c5aabee532dd5abd7da7d21ba01
https://doi.org/10.1016/j.jmmm.2019.04.069
https://doi.org/10.1016/j.jmmm.2019.04.069
Autor:
Weiliang Gan, Wen Siang Lew, Grayson Dao Hwee Wong, Calvin Ching Ian Ang, Francis Poh, Hong-xi Liu, Funan Tan
Publikováno v:
Scientific Reports, Vol 9, Iss 1, Pp 1-1 (2019)
An amendment to this paper has been published and can be accessed via a link at the top of the paper.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b60f83570108f9c75d829249a0a497b1
https://doi.org/10.1038/s41598-019-54255-2
https://doi.org/10.1038/s41598-019-54255-2
Autor:
Grayson Dao Hwee Wong, Calvin Ching Ian Ang, Fu Nan Tan, Wen Siang Lew, Francis Poh, Weiliang Gan, Hong-xi Liu
Publikováno v:
Scientific Reports
Scientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
Scientific Reports, Vol 9, Iss 1, Pp 1-6 (2019)
The use of voltage-controlled magnetic anisotropy (VCMA) via the creation of a sloped electric field has been hailed as an energy-efficient approach for domain wall (DW) propagation. However, this method suffers from a limitation of the nanowire leng
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2af2ab67ea611c7a5149dda7a3afa0d0
https://hdl.handle.net/10356/106583
https://hdl.handle.net/10356/106583
Autor:
Boo Yang Jung, Lim Wei Yi, Danny Pak-Chum Shum, Lim Teck Guan, Juan Boon Tan, Yi Wanbing, Bharat Bhushan, Francis Poh, Eva Wai Leong Ching
Publikováno v:
2018 IEEE International Memory Workshop (IMW).
We present the first magnetic shielding study including design, modeling, fabrication and characterization of package level magnetic shield for perpendicular spin-transfer torque magneto resistive random-access memory (STT-MRAM). Magnetic shielding i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ebd8aedea6b52077af8a3330e9c1e3e
https://doi.org/10.1109/imw.2018.8388828
https://doi.org/10.1109/imw.2018.8388828
Autor:
Yew Tuck Chow, Yi Wanbing, Chin Chuan Neo, Francis Poh, Sarin A. Deshpande, Yi Jiang, Bharat Bhushan, Juan Boon Tan, Kah Wee, Kerry Joseph Nagel, Sanjeev Aggarwal, Moazzem Hossain, Wang Zhehui, Ju Dy, Danny Pak-Chum Shum, Guoqing Lin
Publikováno v:
2017 IEEE International Interconnect Technology Conference (IITC).
We present the first exploratory low temperature, lower than standard back-end-of-line (BEOL) interconnects temperature in CMOS. The approach poses several challenges such as undercut in pad via, photo resist residue defects post Aluminum (Al) etch a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5acef7f653d4bcfb5b43d6c8d1db2f92
https://doi.org/10.1109/iitc-amc.2017.7968956
https://doi.org/10.1109/iitc-amc.2017.7968956
Autor:
H.-J. Chia, Frederick B. Mancoff, Seung-Mo Noh, Jijun Sun, G. Shimon, Yew Tuck Chow, Michael Tran, J. Janesky, Syed M. Alam, M. DeHerrera, Jon M. Slaughter, Sarin A. Deshpande, Taiebeh Tahmasebi, Ming-Wei Lin, M. Hossain, Thomas Andre, Francis Poh, C. C. Wang, Renu Whig, Danny Pak-Chum Shum, S. K. Ye, Yi Jiang, Hong-xi Liu, Sumio Ikegawa, Sanjeev Aggarwal, J. H. Lee, Kerry Joseph Nagel
Publikováno v:
2017 IEEE International Magnetics Conference (INTERMAG).
First-generation MRAM, based on a field switching innovation called “Savtchenko switching,” is mass produced by Everspin in densities up to 16Mb.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a2262e769d5cb547dc58936a326ce10b
https://doi.org/10.1109/intmag.2017.8007929
https://doi.org/10.1109/intmag.2017.8007929
Autor:
Ming-Wei Lin, M. Hossain, Sumio Ikegawa, Yew Tuck Chow, J. H. Lee, H.-J. Chia, M. DeHerrera, J. Janesky, Renu Whig, C. C. Wang, Kerry Joseph Nagel, Jon M. Slaughter, Francis Poh, Sarin A. Deshpande, Frederick B. Mancoff, Syed M. Alam, Hong-xi Liu, Seung-Mo Noh, Sanjeev Aggarwal, Yi Jiang, S. K. Ye, J. J. Sun, Taiebeh Tahmasebi, Danny Pak-Chum Shum, Thomas Andre, G. Shimon, Michael Tran
Publikováno v:
2016 IEEE International Electron Devices Meeting (IEDM).
In this paper we present an overview of important features for reliable and manufacturable ST-MRAM as well as new results in two areas: pMTJ arrays with data retention sufficient for programming before 260°C wave solder, and performance of a 256Mb,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::12ee92fcd34654d549eb37973e0c6c9d
https://doi.org/10.1109/iedm.2016.7838467
https://doi.org/10.1109/iedm.2016.7838467
Publikováno v:
Journal of Magnetism and Magnetic Materials. 490:165448
Due to the shielding effect of ferro-metallic materials, electric field control has been limited to magnetic thin films. Here, we show that by applying an electric field to Pt/Co based heterostructures, the modulation of magnetic anisotropy in a mult
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::86267d09c6b061c4c9124126b56da6b4
https://doi.org/10.1016/j.jmmm.2019.165448
https://doi.org/10.1016/j.jmmm.2019.165448
Publikováno v:
Journal of Magnetism and Magnetic Materials. 487:165316
Hall transport properties of single ferrimagnetic CoTb thin films were systematically studied. We report on the extraordinary Hall signals near the magnetization compensation point. The Hall “anomaly”, which is reminiscent of the Topological Hall
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6ea467852b8080ac081561c0ef3d1dd9
https://doi.org/10.1016/j.jmmm.2019.165316
https://doi.org/10.1016/j.jmmm.2019.165316
Autor:
Weinan Lin, Herng Yau Yoong, Jihang Yu, Jairo Sinova, Liang Liu, Han Wang, Jinyu Deng, Rafael González-Hernández, Jingsheng Chen, Francis Poh, Hong-xi Liu
Publikováno v:
Journal of Physics D: Applied Physics. 52:43LT02
L10 ordered alloys are ideal models for studying the anomalous Hall effect (AHE), which can be used to distinguish the origin from intrinsic (from band structure) or from extrinsic effects (from impurity scatterings). In the bulk limit of L10 ordered
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62e8883fdc36e1609e4903793b8f34de
https://doi.org/10.1088/1361-6463/ab360a
https://doi.org/10.1088/1361-6463/ab360a