Zobrazeno 1 - 10
of 66
pro vyhledávání: '"Francis M. Houlihan"'
Autor:
Yuki Ubayashi, Alexandra Krawicz, Kazuyoshi Ohta, Alberto D. Dioses, Yayi Wei, Joseph E. Oberlander, Shinji Miyazaki, Francis M. Houlihan, Ping-Hung Lu, Lin Zhang, Sumathy Vasanthan, Meng Li, Mark Neisser
Publikováno v:
Journal of Photopolymer Science and Technology. 21:383-392
We review approaches that we have developed at 193 and 248 nm for first and second generation Radiation Sensitive Developable Bottom Anti Reflective Coatings (DBARC) and give an account of our most recent results for both types of DBARC's.
Autor:
Francis M. Houlihan, Hengpeng Wu, Ping-Hung Lu, Joseph E. Oberlander, Alexandra Krawicz, Medhat A. Toukhy, Andrew Romano, Salem K. Mullen, Alberto D. Dioses, Mark Neisser
Publikováno v:
Journal of Photopolymer Science and Technology. 20:359-364
Our approach towards a second generation radiation sensitive developable bottom antireflective coating (DBARC's) for 193 nm and its use with different implant resist resin types will be discussed. Ion beam implant resistance (As implantation 15 KeV a
Autor:
Guanyang Lin, Francis M. Houlihan, Simon Chiu, Muthiah Thiyqarqjan, Dougls Mackenzie, Andrew Romano, Clement Anyadiegwu, Takanori Kudo, Allen G. Timko, David Rentkiewicz, Dalil Rahman, Rqlph R. Dammel, Murirathna Padmanaban
Publikováno v:
Journal of Photopolymer Science and Technology. 19:327-334
We will give an account of our investigation on structure property relationships of amines with regards to line width roughness (LWR) and line edge roughness (LER) of a 193 nm alicyclic-acrylate resist. Specifically, we have looked at basicity, molar
Autor:
David Rentkiewicz, Masato Shigematus, U. Mierau Inge. Vermeir, M. Market, Nickolay Stephanko, Francis M. Houlihan, Daniel Miller, Etsuo Kawaguchi, Andrew R. Romano, Toshiro Itani, Ralph R. Dammel, Raj Sakamuri, Christoph Hohle, Sill Conley
Publikováno v:
Journal of Photopolymer Science and Technology. 17:621-630
Further work is described on a new generation of more transparent, 157 nm resist platforms, which are based upon capping of fluoroalcohol-substituted, transparent perfluorinated resins (TFR) with a tert-butoxycarbonylmethyl (BOCME) moiety. By optimiz
Publikováno v:
Macromolecular Symposia. 175:185-196
Advances in the fabrication technologies associated with electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. Within the next few years, a new form of lithography will be
Autor:
Elsa Reichmanis, Ognian N. Dimov, Francis M. Houlihan, Ilya L. Rushkin, D. Person, Omkaram Nalamasu
Publikováno v:
Journal of Photopolymer Science and Technology. 14:373-384
We report on a study of the chemical and lithographic behavior in a 193nm single layer resist of two types of base additives, aminosulfonates opium and tetrabutylammonium carboxylate salts. These additives were examined because of their low potential
Publikováno v:
Polymer International. 48:1053-1059
In the last two decades, major advances in fabricating very large scale integration (VLSI) electronic devices have placed increasing demands on microlithography, the technology used to generate today's integrated circuits. In 1970, state-of-the-art d
Autor:
Susan M. Stein, Richard S. Hutton, Gary N. Taylor, Francis M. Houlihan, Marcia L. Manion Schilling, Howard E. Katz
Publikováno v:
Journal of The Electrochemical Society. 143:691-695
Electroless metallization processes have been used to develop photopatterned films of poly(diisopropyl vinylbenzylphosphonate-co-N-methylmaleimide) and deposit metallic nickel selectively in the exposed regions of the films. A 100 A thick film of nic
Autor:
Francis M. Houlihan, Susan M. Stein, M. L. Schilling, Howard E. Katz, R. S. Hutton, Gary N. Taylor
Publikováno v:
Chemistry of Materials. 7:1534-1538
Publikováno v:
Chemistry of Materials. 7:271-276