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pro vyhledávání: '"Francis Laurent A."'
Autor:
Francis Laurent A., Sedki Amor, André Nicolas, Kilchytska Valéria, Gérard Pierre, Ali Zeeshan, Udrea Florin, Flandre Denis
Publikováno v:
EPJ Web of Conferences, Vol 170, p 01006 (2018)
In this paper, we study the recovery of onmembrane semiconductor components, such as N-type Field-Effect Transistors (FETs) available in two different channel widths and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after the exposure to
Externí odkaz:
https://doaj.org/article/51b155501190478caee328787b352a38
Publikováno v:
In Sensors and Actuators: A. Physical 1 February 2021 318
Akademický článek
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Autor:
Tang, Xiaohui, Reckinger, Nicolas, Poncelet, Olivier, Louette, Pierre, Colomer, Jean-François, Raskin, Jean-Pierre, Hackens, Benoit, Francis, Laurent A.
We investigate the structural damage of graphene underlying dielectrics (HfO2 and Al2O3) by remote plasma-enhanced atomic layer deposition (PE-ALD). Dielectric film is grown on bilayer graphene without inducing significant damage to the bottom graphe
Externí odkaz:
http://arxiv.org/abs/1403.3787
Autor:
Tang, Xiaohui, Francis, Laurent A., Dutu, Constantin Augustin, Reckinger, Nicolas, Raskin, Jean-Pierre
We developed a simple and reliable method for the fabrication of sub-10-nm wide nanogaps. The self-formed nanogap is based on the stoichiometric solid-state reaction between metal and Si atoms during silicidation process. The nanogap width is deter-
Externí odkaz:
http://arxiv.org/abs/1303.4586
Autor:
Maamer, Bilel, Boughamoura, Ayda, Fath El-Bab, Ahmed M.R., Francis, Laurent A., Tounsi, Farès
Publikováno v:
In Energy Conversion and Management 1 November 2019 199
Autor:
El Fissi, Lamia, Fernández, Román, García, Pablo, Calero, María, García, José V., Jiménez, Yolanda, Arnau, Antonio, Francis, Laurent A.
Publikováno v:
In Sensors & Actuators: A. Physical 1 January 2019 285:511-518
Autor:
Bay, Annick, Andre, Nicolas, Sarrazin, Michael, Belarouci, Ali, Aimez, Vincent, Francis, Laurent A., Vigneron, Jean Pol
Publikováno v:
Opt. Express 21 (S1) A179-A189 (2013)
In this paper the design, fabrication and characterization of a bioinspired overlayer deposited on a GaN LED is described. The purpose of this overlayer is to improve light extraction into air from the diode's high refractive-index active material. T
Externí odkaz:
http://arxiv.org/abs/1209.4767
Autor:
Tang, Xiaohui, Krzeminski, Christophe, Etangs-Levallois, Aurélien Lecavelier des, Chen, Zhenkun, Dubois, Emmanuel, Kasper, Erich, Karmous, Alim, Reckinger, Nicolas, Flandre, Denis, Francis, Laurent A., Colinge, Jean-Pierre, Raskin, Jean-Pierre
Publikováno v:
Nano Lett., 2011, 11 (11), pp 4520--4526
We present a new fully self-aligned single-electron memory with a single pair of nano floating gates, made of different materials (Si and Ge). The energy barrier that prevents stored charge leakage is induced not only by quantum effects but also by t
Externí odkaz:
http://arxiv.org/abs/1111.3683