Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Francis K. Chai"'
Publikováno v:
Journal of Applied Physics. 82:2517-2527
In this paper, the extraction of doping profiles in ferroelectric thin-film capacitors using ferroelectric capacitance–voltage (CV) measurements is studied. For a ferroelectric field-dependent permittivity model, the doping profile relation to meas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::385e281c89844f6a7cb7803610af9f0c
https://doi.org/10.1063/1.365766
https://doi.org/10.1063/1.365766
Publikováno v:
Journal of Applied Physics. 82:2505-2516
A domain model consistent with the measured capacitance–voltage (CV) characteristics of lead zirconate titanate (PZT) capacitors is proposed. Two variants of this model are presented and compared with experimentally measured CV data. The basic mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ff1da1a99f63052a27aedae859124b9e
https://doi.org/10.1063/1.365764
https://doi.org/10.1063/1.365764
Publikováno v:
Journal of Applied Physics. 78:4766-4775
The electric‐field distribution in a ferroelectric capacitor often is treated as a uniform effective field for circuit‐level modeling. By solving Poisson’s equation and treating the ferroelectric capacitor as a back‐to‐back Schottky‐barri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06451b37494ccc4b5c0692413530a993
https://doi.org/10.1063/1.359823
https://doi.org/10.1063/1.359823
Autor:
Ed Maxwell, Francis K. Chai, Mike Mallinger, Mar Caballero, Dumitru Sdrulla, Bruce Odekirk, Terri Fields
Publikováno v:
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and ICs.
A Static Induction Transistor (SIT) technology capable of delivering output power over 2200W at VDD of 125V in UHF band of 406MHz-450MHz is presented. The transistor technology is built on 3” 4H-SiC epitaxial wafers. L-band performance is presented
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6c09d09e7d9da67991c7f8415aaf3e32
https://doi.org/10.1109/ispsd.2011.5890850
https://doi.org/10.1109/ispsd.2011.5890850
Publikováno v:
Solid-State Electronics. 38:1547-1549
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e5ff0c452b3054a56f818e796f4c93c6
https://doi.org/10.1016/0038-1101(95)00015-l
https://doi.org/10.1016/0038-1101(95)00015-l
Publikováno v:
Proceedings of 1994 IEEE International Symposium on Applications of Ferroelectrics.
The field-dependent polarization model is a commonly proposed model to describe the hysteresis loop of a ferroelectric material. The electric field in the model refers to the local field which varies with position within the ferroelectric film. Howev
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::446881bd3f1ba47a848db38baabbe243
https://doi.org/10.1109/isaf.1994.522303
https://doi.org/10.1109/isaf.1994.522303
Autor:
Ronald D. Schrimpf, R. N. Vogt, M. N. Orr, Francis K. Chai, J.R. Brews, Kenneth F. Galloway, Dunbar P. Birnie
Publikováno v:
Proceedings of International Electron Devices Meeting.
Ferroelectric thin film capacitors (FTFCs) are the basic storage element in ferroelectric memory cells. In this paper, the effects of varying film thickness and niobium doping level on electrical properties for memory applications in FTFCs are examin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fdf341973dda400a37fbc977fe517998
https://doi.org/10.1109/iedm.1995.497197
https://doi.org/10.1109/iedm.1995.497197
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Conference
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