Zobrazeno 1 - 10
of 17
pro vyhledávání: '"Francis J. Morris"'
Publikováno v:
IEEE Transactions on Electron Devices. 51:653-657
A physics-based model is shown to yield the small-signal equivalent circuit of the resonant tunneling diode (RTD) including an analytic expression for both the quantum inductance and capacitance. This model unifies previous models by Brown et al. for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c7a70558132c98f562495f9944ed1252
https://doi.org/10.1109/ted.2004.825795
https://doi.org/10.1109/ted.2004.825795
Autor:
Bobby Brar, Alan Seabaugh, Theodore S. Moise, E.A. Beam, Francis J. Morris, Gary A. Frazier, T.P.E. Broekaert, J.P.A. van der Wagt
Publikováno v:
IEEE Journal of Solid-State Circuits. 33:1342-1349
The combination of resonant-tunneling diodes and heterostructure field-effect transistors provides a versatile technology for implementing microwave digital and mixed-signal applications. Here we demonstrate and characterize the first monolithic flas
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d29b053006ea765a99e271cac73b2ee
https://doi.org/10.1109/4.711333
https://doi.org/10.1109/4.711333
Publikováno v:
IEEE Electron Device Letters. 26:894-896
A Schottky-collector resonant tunnel diode detector has been fabricated and characterized at zero bias up to 400 GHz. General device structure and fabrication are discussed, and small-signal equivalent models are presented for different diode areas.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dc9682af650215c3c1cfe9a70eda35ad
https://doi.org/10.1109/led.2005.859622
https://doi.org/10.1109/led.2005.859622
Publikováno v:
2007 IEEE/MTT-S International Microwave Symposium.
This paper presents measured results for a novel Schottky barrier contact-based RF MEMS switch, specifically S-parameter and IP2 linearity measurements. The Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5a519fa3e023537f47100bb1e1df2b83
https://doi.org/10.1109/mwsym.2007.380450
https://doi.org/10.1109/mwsym.2007.380450
Publikováno v:
2007 IEEE 20th International Conference on Micro Electro Mechanical Systems (MEMS).
This paper presents the design, fabrication and measurement results for a novel Schottky barrier contact-based RF MEMS switch. This Schottky barrier contact allows one to operate the RF MEMS switch in a traditional capacitive mode when it is reverse
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5df573215160df3677acb01441a5cf4e
https://doi.org/10.1109/memsys.2007.4433043
https://doi.org/10.1109/memsys.2007.4433043
Publikováno v:
Conference Digest [Late News Papers volume included]Device Research Conference, 2004. 62nd DRC..
InAlAs/AlAs based RTDs with a peak current density over 500 kA/cm/sup 2/ have been designed and fabricated. Relaxation oscillator circuits for 20 and 50 GHz were designed using these 0.6 /spl mu/m/sup 2/ RTDs. They consist of an RTD and a 5 /spl Omeg
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::53b0db520b7236aa8453362e7f8f45bf
https://doi.org/10.1109/drc.2004.1367887
https://doi.org/10.1109/drc.2004.1367887
Publikováno v:
Great Lakes Symposium on VLSI
The inherent bistability and picosecond time-scale switching of the resonant tunneling diode (RTD) provides an ideal element for the design of digital circuits and analog signal quantizers in the 10-100 GHz domain. New differential RTD-based circuits
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e2be02cb0fd00c35c97620af010268c
https://doi.org/10.1109/glsv.1999.757392
https://doi.org/10.1109/glsv.1999.757392
