Zobrazeno 1 - 10
of 61
pro vyhledávání: '"Francis G. Celii"'
Publikováno v:
Radiology Case Reports, Vol 14, Iss 2, Pp 179-183 (2019)
Advances in oncologic treatment have improved survival rates, allowing late effects of radiotherapy to become more prevalent. Our patient, an 82-year-old woman with a remote history of right thigh basal cell carcinoma treated with resection and radia
Externí odkaz:
https://doaj.org/article/2086400b4e434a10bdffd08fb97b9ea2
Publikováno v:
Radiology Case Reports, Vol 14, Iss 2, Pp 246-250 (2019)
Endoscopic retrieval of embedded, proximally migrated, or fractured plastic biliary stents may be technically challenging and sometimes unsuccessful. Percutaneous transhepatic techniques have previously been described to assist in such challenging ca
Externí odkaz:
https://doaj.org/article/6a1741e5e7684f5783af2655077d9d80
Publikováno v:
Radiology Case Reports, Vol 14, Iss 2, Pp 246-250 (2019)
Radiology Case Reports
Radiology Case Reports
Endoscopic retrieval of embedded, proximally migrated, or fractured plastic biliary stents may be technically challenging and sometimes unsuccessful. Percutaneous transhepatic techniques have previously been described to assist in such challenging ca
Autor:
Nicholas M. Beckmann, Francis G. Celii
Publikováno v:
Radiology Case Reports
Radiology Case Reports, Vol 14, Iss 2, Pp 179-183 (2019)
Radiology Case Reports, Vol 14, Iss 2, Pp 179-183 (2019)
Advances in oncologic treatment have improved survival rates, allowing late effects of radiotherapy to become more prevalent. Our patient, an 82-year-old woman with a remote history of right thigh basal cell carcinoma treated with resection and radia
Autor:
S. R. Summerfelt, Theodore S. Moise, K. R. Udayakumar, Sanjeev Aggarwal, Hugh P. McAdams, B. Rathsack, Francis G. Celii, J. Rodriguez, Lindsey H. Hall, L. Matz, J. S. Martin, K. Remack, K. Boku
Publikováno v:
Japanese Journal of Applied Physics. 45:3202-3206
High density embedded ferroelectric random access memory (FRAM), operable at 1.5 V, has been fabricated within a 130 nm, 5 lm Cu/fluorosilicate glass (FSG) logic process. To evaluate FRAM extendability to future process nodes, we have measured the bi
Autor:
R. Bailey, K. Boku, Kelly J. Taylor, John A. Rodriguez, Francis G. Celii, Joe W. McPherson, Glen R. Fox, Theodore S. Moise, Hugh P. McAdams, M. Depner, Sanjeev Aggarwal, K. Remack, Lindsey H. Hall, K. R. Udayakumar, S. Martin, Scott R. Summerfelt
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 4:436-449
We report on the reliability properties of ferroelectric capacitors and memory arrays embedded in a 130-nm CMOS logic process with 5LM Cu/FSG. Low voltage (
Autor:
Francis G. Celii, Mahesh Thakre, Mark K. Gay, Scott R. Summerfelt, Sanjeev Aggarwal, J. Scott Martin, Lindsey Hall, K. R. Udayakumar, Ted S. Moise
Publikováno v:
Integrated Ferroelectrics. 53:269-277
We describe the etch processes used for integration of embedded ferroelectric random access memory (FRAM) within a standard CMOS logic flow. The ferroelectric module is inserted following front-end contact formation and prior to backend integration u
Publikováno v:
Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 19:1388-1391
The use of dual damascene patterning for integration of Cu with low-k dielectric films has introduced new challenges for plasma etch processes. With a via-first dual damascene approach, an important issue for trench etch is defect formation (i.e., ox
Autor:
P. Chen, Francis G. Celii, Theodore S. Moise, L. Archer, Scott R. Summerfelt, M. W. Russell, S. M. Bilodeau, P. C. Van Buskirk, Daniel J. Vestyck, R. Beavers, Stephen T. Johnston, Stephen R. Gilbert
Publikováno v:
Integrated Ferroelectrics. 27:227-241
We report the effect of top electrode structure on the electrical properties of ferroelectric Pb(ZrxTi1-x)O3 (PZT) capacitors. Samples with Ir/PZT/Ir or Ir/IrO2/PZT/Ir stacks were prepared using reactively sputtered Ir/IrO2 (top) and Ir (bottom) elec
Publikováno v:
Journal of Electronic Materials. 26:1083-1089
We describe a new, universal, and easy-to-use method for real-time thickness and growth rate extraction based on in situ optical monitoring during molecular beam epitaxy of GaAs/AlAs layered structures. The method is based on a novel least-square pha