Shallow Trench Isolation Patterning to Improve Photon Detection Probability of Single-Photon Avalanche Diodes Integrated in FD-SOI CMOS Technology

Autor: Shaochen Gao, Duc-Tung Vu, Thibauld Cazimajou, Patrick Pittet, Martine Le Berre, Mohammadreza Dolatpoor Lakeh, Fabien Mandorlo, Régis Orobtchouk, Jean-Baptiste Schell, Jean-Baptiste Kammerer, Andreia Cathelin, Dominique Golanski, Wilfried Uhring, Francis Calmon

Publikováno v: Photonics, Vol 11, Iss 6, p 526 (2024)

The integration of Single-Photon Avalanche Diodes (SPADs) in CMOS Fully Depleted Silicon-On-Insulator (FD-SOI) technology under a buried oxide (BOX) layer and a silicon film containing transistors makes it possible to realize a 3D SPAD at the chip le

Externí odkaz: https://doaj.org/article/ac80468040404a60aef0d5871a92f1c9

A High-Efficiency Compact Planar Antenna for ISM Wireless Systems

Autor: Tao Zhou, Yazi Cao, Zhiqun Cheng, Martine Le Berre, Francis Calmon

Publikováno v: International Journal of Antennas and Propagation, Vol 2017 (2017)

A novel high-efficiency compact planar antenna at 433 MHz with minimized size and low-cost and easy to integrate into the ISM wireless applications is designed, fabricated, and measured. Capacitive strips that are formed by cutting inter-digital slot

Externí odkaz: https://doaj.org/article/7c88822f075b456da0a86fbe639d5bb4

NOISE THEORITICAL INVESTIGATIONS FOR TRI-DIMMENSIONAL NMR CIRCUIT: TOWARDS THE NANOSCALE

Autor: Yue Ma, Samir Labiod, Latifa Fakri-Bouchet, Jacques Verdier, Francis Calmon, Saïda Latreche, Christian Gontrand

Publikováno v: International Journal of Mathematics and Statistics. 4

In recent years, NMR/MRI portable devices have drawn attention of numerous researcher teams. They are used for variety of applications, from medical diagnosis to archaeological analysis, nondestructive material testing evaluation of water presence in

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::773506b240c77f6d533c856689d542ee
https://doi.org/10.53555/eijms.v4i1.16

3D Electro-optical Simulations for Improving the Photon Detection Probability of SPAD Implemented in FD-SOI CMOS Technology

Autor: R. Orobtchouk, Dominique Golanski, D. Issartel, Andreia Cathelin, S. Gao, Francis Calmon, F. Mandorlo

Publikováno v: 2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD)
2021 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD), Sep 2021, Dallas, United States. pp.301-304, ⟨10.1109/SISPAD54002.2021.9592555⟩

International audience; In this article, a 3D electro-optical simulation method is presented in order to estimate the Photon Detection Probability (PDP) of Single-Photon Avalanche Diodes (SPAD). The efficiency of the proposed simulation flow is demon

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::85ba6b29c2a8d1d7f64fd43412a2b753
https://halshs.archives-ouvertes.fr/halshs-03515486

Avalanche Transient Simulations of SPAD integrated in 28nm FD-SOI CMOS Technology

Autor: Remy Cellier, Francis Calmon, Dominique Golanski, Patrick Pittet, Andreia Cathelin, Scott C. Hagen, D. Issartel, S. Gao

Publikováno v: 2021 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EuroSOI-ULIS).

This article presents a study of Single Photon Avalanche Diodes (SPAD) implemented in 28nm Fully Depleted Silicon-On-Insulator (FD-SOI) CMOS technology based on transient TCAD simulations. The integration of SPAD in this technology is currently being

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f479b2cdc3cc591b34c136e413ae70a8
https://doi.org/10.1109/eurosoi-ulis53016.2021.9560679