Zobrazeno 1 - 4
of 4
pro vyhledávání: '"Francine Tatsch"'
Autor:
Ítalo M. Oyarzabal, Mariana de Mello Timm, Livio Amaral, Paulo Fernando Papaleo Fichtner, Francine Tatsch
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 458:174-178
This contribution reports on transmission electron microscopy observations of Au and Ag ion irradiated complex metal alloys obtained by solution annealing treatments in AISI 316L foils. Two sets of samples are used: i) pristine solution annealed ones
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::64fa0a7c3cec73f5a2c029675bcdc83d
https://doi.org/10.1016/j.nimb.2018.12.031
https://doi.org/10.1016/j.nimb.2018.12.031
Autor:
Paulo Fernando Papaleo Fichtner, Francine Tatsch, Mariana M. de Timm, Willian M. Pasini, Franciele Saes de Oliveira, Ítalo M. Oyarzabal, Livio Amaral
Publikováno v:
MRS Advances. 3:1799-1805
200 μm thick solution annealed AISI 316L stainless steel foils were implanted with Ar ions to produce a 0.25 at. % concentration-depth plateau extending from the near surface to a depth of ≈ 250 nm, and then annealed at 550°C for 2 hours to form
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6d97b06f6b4398b39a60401036ee5e9
https://doi.org/10.1557/adv.2018.414
https://doi.org/10.1557/adv.2018.414
Autor:
Israel Jacob Rabin Baumvol, V. Edon, B. Agius, Carlos Driemeier, L. Miotti, Karen Paz Bastos, Francine Tatsch, M. C. Hugon, C. Krug
Publikováno v:
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 249:366-369
La and Hf aluminates are promising candidates to replace SiO 2 as gate dielectric for future Si-based metal–oxide–semiconductor devices. In this study, ion beam analyses were employed to investigate the composition of La and Hf aluminate thin fil
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb13de29afc4672dbfac61617fef3bec
https://doi.org/10.1016/j.nimb.2006.04.030
https://doi.org/10.1016/j.nimb.2006.04.030
Autor:
Israel Jacob Rabin Baumvol, Francine Tatsch, Claudio Radtke, M. C. Hugon, V. Edon, Carlos Driemeier, L. Miotti, O. Voldoire, B. Agius
Publikováno v:
Electrochemical and Solid-State Letters. 9:F49
LaAlO 3 films sputter-deposited on Si were submitted to rapid thermal annealing at 800 and 1000°C. Atomic transport and chemical changes were investigated using ion beam analysis and X-ray photoelectron spectroscopy. Annealing induced La and Al loss
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::988f957dcae45bdb0531f89691c08c47
https://doi.org/10.1149/1.2191130
https://doi.org/10.1149/1.2191130