Impact of Temperature on Neutron Irradiation Failure-in-Time of Silicon and Silicon Carbide Power MOSFETs

Autor: Fabio Principato, Carlo Cazzaniga, Maria Kastriotou, Christopher Frost, Leonardo Abbene, Francesco Pintacuda

Publikováno v: Radiation, Vol 3, Iss 2, Pp 110-122 (2023)

Accelerated neutron tests on silicon (Si) and silicon carbide (SiC) power MOSFETs at different temperatures and drain bias voltages were performed at the ChipIr facility (Didcot, UK). A super-junction silicon MOSFET and planar SiC MOSFETs with differ

Externí odkaz: https://doaj.org/article/63b6dee792214521851ac8c280f87dd7

Accelerated Tests on Si and SiC Power Transistors with Thermal, Fast and Ultra-Fast Neutrons

Autor: Fabio Principato, Saverio Altieri, Leonardo Abbene, Francesco Pintacuda

Publikováno v: Sensors, Vol 20, Iss 11, p 3021 (2020)

Neutron test campaigns on silicon (Si) and silicon carbide (SiC) power MOSFETs and IGBTs were conducted at the TRIGA (Training, Research, Isotopes, General Atomics) Mark II (Pavia, Italy) nuclear reactor and ChipIr-ISIS Neutron and Muon Source (Didco

Externí odkaz: https://doaj.org/article/b7488c3ffa7a4908bfc816dae84a6f06

Investigation of the Impact of Neutron Irradiation on SiC Power MOSFETs Lifetime by Reliability Tests

Autor: Nicola Nicosia, O. Crepel, Vincenzo Cantarella, Salvatore D′Arrigo, Corrado Cappello, Fabio Principato, Francesco Pintacuda, Marcello Mirabello, Leonardo Abbene, Giuseppe Allegra, Alessandro Di Mauro

Publikováno v: Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 5627, p 5627 (2021)
Sensors
Volume 21
Issue 16

High temperature reverse-bias (HTRB), High temperature gate-bias (HTGB) tests and electrical DC characterization were performed on planar-SiC power MOSFETs which survived to accelerated neutron irradiation tests carried out at ChipIr-ISIS (Didcot, UK

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9f0037fc5da6b876e4ac64c39109980e
https://doi.org/10.3390/s21165627

Heavy-Ion-Induced Degradation in SiC Schottky Diodes : Incident Angle and Energy Deposition Dependence

Autor: Ronald D. Schrimpf, Francesco Pintacuda, Marek Turowski, Alexandre Louis Bosser, Michele Muschitiello, C.J. Nicklaw, Robert A. Weller, Kenneth F. Galloway, Veronique Ferlet-Cavrois, Robert A. Reed, Ari Virtanen, Arto Javanainen, Jean-Marie Lauenstein

Publikováno v: IEEE Transactions on Nuclear Science
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2017, 64 (8), pp.2031-2037. ⟨10.1109/TNS.2017.2717045⟩

International audience; Heavy-ion-induced degradation in the reverse leakage current of SiC Schottky power diodes exhibits a strong dependence on the ion angle of incidence. This effect is studied experimentally for several different bias voltages ap

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a2d4c67994a2bad8ae913d9957f17bb
http://juuli.fi/Record/0285128517

SEGR and PIGS Failure Analysis of SiC Mosfet

Autor: E. Vitanza, S. Massett, Vincenzo Cantarella, Francesco Pintacuda, Michele Muschitiello

Publikováno v: 2019 European Space Power Conference (ESPC).

This paper report the Failure Analysis results performed on SiC Mosfet with SEGR and PIGS failure after SEE test. The analysis discovered a hot spot in the SiC junction at the SEGR fail point.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::731e09a76fe84f990da8befa3110b862
https://doi.org/10.1109/espc.2019.8931999