Zobrazeno 1 - 10
of 221
pro vyhledávání: '"Francesca Campabadal"'
Autor:
Maryam Akbari, Sattar Mirzakuchaki, Daniel Arumi, Salvador Manich, Alvaro Gomez-Pau, Francesca Campabadal, Mireia Bargallo Gonzalez, Rosa Rodriguez-Montanes
Publikováno v:
IEEE Access, Vol 11, Pp 66682-66693 (2023)
Hardware-based security primitives like True Random Number Generators (TRNG) have become a crucial part in protecting data over communication channels. With the growth of internet and cloud storage, TRNGs are required in numerous cryptographic operat
Externí odkaz:
https://doaj.org/article/e68dfd085a36443d89b4b8cde2add0a6
Autor:
Juan B. Roldán, Enrique Miranda, David Maldonado, Alexey N. Mikhaylov, Nikolay V. Agudov, Alexander A. Dubkov, Maria N. Koryazhkina, Mireia B. González, Marco A. Villena, Samuel Poblador, Mercedes Saludes-Tapia, Rodrigo Picos, Francisco Jiménez-Molinos, Stavros G. Stavrinides, Emili Salvador, Francisco J. Alonso, Francesca Campabadal, Bernardo Spagnolo, Mario Lanza, Leon O. Chua
Publikováno v:
Advanced Intelligent Systems, Vol 5, Iss 6, Pp n/a-n/a (2023)
Resistive memories are outstanding electron devices that have displayed a large potential in a plethora of applications such as nonvolatile data storage, neuromorphic computing, hardware cryptography, etc. Their fabrication control and performance ha
Externí odkaz:
https://doaj.org/article/8abc1b18881346218ff8c2bbe6e7d4a8
Autor:
Cristina Aguilera-Pedregosa, David Maldonado, Mireia B. González, Enrique Moreno, Francisco Jiménez-Molinos, Francesca Campabadal, Juan B. Roldán
Publikováno v:
Micromachines, Vol 14, Iss 3, p 630 (2023)
A methodology to estimate the device temperature in resistive random access memories (RRAMs) is presented. Unipolar devices, which are known to be highly influenced by thermal effects in their resistive switching operation, are employed to develop th
Externí odkaz:
https://doaj.org/article/1338e058353642fbb4a3c980ffa18c56
Autor:
Michael LEE, Abdoullatif BARAKET, Nadia ZINE, Miguel ZABALA, Francesca CAMPABADAL, Nicole JAFFREZIC-RENAULT, Abdelhamid ERRACHID
Publikováno v:
Sensors & Transducers, Vol 27, Iss Special Issue, Pp 233-238 (2014)
As a sensing element, silicon dioxide (SiO2) has been applied within ion-sensitive field effect transistors (ISFET). However, a requirement of increasing pH-sensitivity and stability has observed an increased number of insulating materials that obtai
Externí odkaz:
https://doaj.org/article/45c767488f4d47d09a6d7557dc1c70dd
Autor:
Jordi Suñé, Fernando Aguirre, Mireia Bargalló González, Francesca Campabadal, Enrique Miranda
Publikováno v:
Advanced Quantum Technologies.
Autor:
Jordi Suñé, Francesca campabadal, Mireia B. Gonzalez, Mercedes Saludes, Fernando Aguirre, Enrique Miranda
This letter reports a compact SPICE model for the electron transport characteristics of Al2O3/HfO2-based nanolaminates for their use in multilevel one-time programmable (M-OTP) memories. The model comprises three simulation blocks corresponding to th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::adb5808fe9ab90c292ea4b541586cade
https://doi.org/10.36227/techrxiv.22640299.v1
https://doi.org/10.36227/techrxiv.22640299.v1
Autor:
Samuel Poblador, Jordi Suñé, Francesca Campabadal, M. Saludes-Tapia, Enrique Miranda, Mireia Bargallo Gonzalez
Publikováno v:
IEEE Transactions on Electron Devices. 68:5981-5988
Complementary resistive switching (CRS) arises when two bipolar-mode memristive devices are antiserially connected, forming a single functional structure. The combined effect of both memristors leads to the appearance of high (HRS) and low (LRS) resi
Autor:
Francesca Campabadal, M. Maestro-Izquierdo, Jordi Suñé, Enrique Miranda, Mireia Bargallo Gonzalez
Publikováno v:
IEEE Electron Device Letters. 42:565-568
As theoretically predicted by Prof. Chua, the input signal frequency has a major impact on the electrical behavior of memristors. According with one of the so-called fingerprints of such devices, the resistive window, i.e. the difference between the
Autor:
Mireia Bargallo Gonzalez, Jordi Suñé, Francesca Campabadal, Jordi Munoz Gorriz, Enrique Miranda
Publikováno v:
IEEE Electron Device Letters. 41:1770-1773
Time statistics for successive breakdown (BD) events in Al2O3/HfO2-based nanolaminates aimed to the development of multilevel one-time programmable (OTP) memory cells is investigated. The clustering model is shown to account for the departure of the