Efficient silicon nitride SiN x :H antireflective and passivation layers deposited by atmospheric pressure PECVD for silicon solar cells

Autor: Romain Magnan, Françoise Massines, Emmanuel Hernandez, Pierre Saint-Cast, Paul Brunet, Jean-François Lelièvre, S. Pouliquen, Bishal Kafle

Publikováno v: Progress in Photovoltaics
Progress in Photovoltaics, Wiley, 2018, 27 (11), pp.1007-1019. ⟨10.1002/pip.3141⟩

This work demonstrates the efficient optical and passivation properties provided by hydrogenated silicon nitride (SiNx:H) layers deposited in a lab‐scale atmospheric pressure plasma enhanced chemical vapor deposition (AP‐PECVD) reactor. By applyi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::3fea47b3a215209fab82a6148bba095d
https://doi.org/10.1002/pip.3141

Atmospheric Pressure Radio-Frequency DBD Deposition of Dense Silicon Dioxide Thin Film

Autor: Jean-François Lelièvre, Françoise Massines, Remy Bazinette, J. Paillol

Publikováno v: Plasma Processes and Polymers. 13:1015-1024

Radio-frequency (RF) homogeneous dielectric barrier discharge (DBD) is compared to low frequency glow DBD to make silicon oxide from Ar/NH3/SiH4. RF-DBD is a more powerful discharge, and the growth rate is not limited by precursor dissociation rate b

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::02490581a88c956fa34579e4959dfed2
https://doi.org/10.1002/ppap.201600038

Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon

Autor: Jean-François Lelièvre, C. Frigeri, C.E. Pastore, Marina Gutierrez, Jose Carlos Piñero, Daniel Araujo, Michel Gendry, A. Benali

Publikováno v: Applied Surface Science
Applied Surface Science, Elsevier, 2017, 395, pp.195-199. ⟨10.1016/j.apsusc.2016.07.144⟩
Applied surface science 395 (2017): 195–199. doi:10.1016/j.apsusc.2016.07.144
info:cnr-pdr/source/autori:Pinero J.C.; Araujo D.; Pastore C.E.; Gutierrez M.; Frigeri C.; Benali A.; Lelievre J.F.; Gendry M./titolo:Twins and strain relaxation in zinc-blende GaAs nanowires grown on silicon/doi:10.1016%2Fj.apsusc.2016.07.144/rivista:Applied surface science/anno:2017/pagina_da:195/pagina_a:199/intervallo_pagine:195–199/volume:395

To integrate materials with large lattice mismatch as GaAs on silicon (Si) substrate, one possible approach, to improve the GaAs crystalline quality, is to use nanowires (NWs) technology. In the present contribution, NWs are grown on 〈111〉 orient

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5753c1f3186d318128db100711dea780

Influence of the discharge mode on the optical and passivation properties of SiNx:H deposited by PECVD at atmospheric pressure

Autor: Jean-François Lelièvre, Françoise Massines, Laura Gaudy, Remy Bazinette

Publikováno v: Energy Procedia
Energy Procedia, Elsevier, 2016, 92, pp.309-316. ⟨10.1016/j.egypro.2016.07.087⟩

International audience; The cost of industrial silicon solar cells could be greatly reduced by the implementation of PECVD at atmospheric pressure for the deposition of the silicon nitride (SiN) antireflective coating. For a successful development of

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2267820964942149f18f169daf3c48fb
https://hal-univ-perp.archives-ouvertes.fr/hal-01467741

Impurity-to-efficiency simulator: predictive simulation of silicon solar cell performance based on iron content and distribution

Autor: Tonio Buonassisi, C. del Cañizo, Jean-François Lelièvre, David P. Fenning, Mariana I. Bertoni, Jasmin Hofstetter

Publikováno v: Progress in Photovoltaics: Research and Applications. 19:487-497

We present a simulation tool that predicts solar cell efficiency based on iron content in as-grown wafer and solar cell processing conditions. This “impurity-to-efficiency” (I2E) simulation tool consists of three serial components, which are inde

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::47551dc733f3c61fc56e0962a79aac11
https://doi.org/10.1002/pip.1062