Zobrazeno 1 - 5
of 5
pro vyhledávání: '"François Chiaruttini"'
Autor:
Yvon Cordier, Sébastien Chenot, Benjamin Damilano, Jessica Vives, Thierry Guillet, Maria Vladimirova, Pierre Lefebvre, François Chiaruttini, Benoit Jouault, Christelle Brimont
Publikováno v:
Nano Letters
Nano Letters, American Chemical Society, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
Nano Letters, American Chemical Society, 2019, 19 (8), pp.4911-4918. ⟨10.1021/acs.nanolett.9b00914⟩
International audience; Dipolar excitons offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of dipolar excitons. We demonstra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::b8b290dfcac1bad50b0531c7b9cb5858
https://doi.org/10.1021/acs.nanolett.9b00914
https://doi.org/10.1021/acs.nanolett.9b00914
Autor:
Benjamin Damilano, Thierry Guillet, M. Vladimirova, Pierre Lefebvre, François Chiaruttini, S. Cronenberger, Denis Scalbert, Christelle Brimont, Benoit Jouault
Publikováno v:
Physical Review B
Physical Review B, American Physical Society, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
Physical Review B, American Physical Society, 2021, 103 (4), pp.045308. ⟨10.1103/PhysRevB.103.045308⟩
The Mott transition from a dipolar excitonic liquid to an electron-hole plasma is demonstrated in a wide GaN/(Al,Ga)N quantum well at $T=7$K by means of spatially-resolved magneto-photoluminescence spectroscopy. Increasing optical excitation density
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::257f4ffccdceee08bf22d2fab1a54e48
https://hal.archives-ouvertes.fr/hal-03014825
https://hal.archives-ouvertes.fr/hal-03014825
Autor:
François Dubin, Maria Vladimirova, François Chiaruttini, Chahine Abbas, Denis Scalbert, Aristide Lemaître, Steeve Cronenberger
Publikováno v:
Superlattices and Microstructures
Superlattices and Microstructures, Elsevier, 2018, 122, pp.643. ⟨10.1016/j.spmi.2018.06.015⟩
Superlattices and Microstructures, Elsevier, 2018, 122, pp.643. ⟨10.1016/j.spmi.2018.06.015⟩
Density and spin dynamics of indirect excitons in asymmetric GaAs/AlGaAs coupled quantum wells is studied by time-resolved photoluminescence. Under electric bias applied in the growth direction the lifetime of indirect excitons formed by an electron
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1a172af638848ce3bc0e02b1a7bab51f
https://doi.org/10.1016/j.spmi.2018.06.015
https://doi.org/10.1016/j.spmi.2018.06.015
Publikováno v:
Molecular Physics
Molecular Physics, Taylor & Francis, 2003, 101, pp.1605. ⟨10.1080/0026897031000068578⟩
Molecular Physics, Taylor & Francis, 2003, 101, pp.1605. ⟨10.1080/0026897031000068578⟩
Using equilibrium and nonequilibrium molecular dynamics simulations, we determine the Kapitza resistance (or thermal contact resistance) at a model liquid solid interface. The Kapitza resistance (or the associated Kapitza length) can reach appreciabl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c18f98b176d019a7f76b2312c3a6795c
https://hal.archives-ouvertes.fr/hal-00013483
https://hal.archives-ouvertes.fr/hal-00013483
Autor:
Maria Vladimirova, François Chiaruttini, Thierry Guillet, Christelle Brimont, benoit jouault, Pierre Lefebvre, Sebastien Chenot, Yvon Cordier, Benjamin Damilano
Publikováno v:
HAL
13th International Conference on Nitride Semiconductors (ICNS-13)
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
13th International Conference on Nitride Semiconductors (ICNS-13)
13th International Conference on Nitride Semiconductors (ICNS-13), Jul 2019, Bellevue, United States
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES
5th INTERNATIONAL CONFERENCE ON QUANTUM TECHNOLOGIES, Jul 2019, Moscou, Russia
International audience; Dipolar, or indirect excitons (IXs) offer a rich playground for both design of novel optoelectronic devices and fundamental many-body physics. Wide GaN/(AlGa)N quantum wells host a new and promising realization of such exciton
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::68301c6b16427c7919092556b7cd879d
https://hal.archives-ouvertes.fr/hal-02466887
https://hal.archives-ouvertes.fr/hal-02466887