Výsledky vyhledávání - "François Boige"

SiC MOSFETs soft and hard failure modes: functional analysis and structural characterization

Autor: Alberto Castellazzi, François Boige, A. Borghese, Irace, Asad Fayyaz, Frédéric Richardeau, G. Guibaud, V. Chazal

Publikováno v: 32nd IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Hofburg Palace, Vienna (Austria) May 17–21, 2020.
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD)
2020 32nd International Symposium on Power Semiconductor Devices and ICs (ISPSD), Sep 2020, Vienna ( virtual ), Austria. pp.170-173, ⟨10.1109/ISPSD46842.2020.9170094⟩

International audience; This paper discusses first the discriminating phenomena yielding either a fail-to-short or fail-to-open circuit signature in 1200 V SiC power MOSFETs undergoing short-circuit electro-thermal stress. Since fail-to-open behavior

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1f14afec13b5ddf5a201dfc42c1c718e
https://hal.archives-ouvertes.fr/hal-02994864/document

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‘ig,vgs’ Monitoring for Fast and Robust SiC MOSFET Short-Circuit Protection with High integration Capability

Autor: Yazan Barazi, Frédéric Richardeau, Jean-Marc Blaquiere, Nicolas Rouger, François Boige

Publikováno v: 2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe)
2020 22nd European Conference on Power Electronics and Applications (EPE'20 ECCE Europe), Sep 2020, Lyon (Virtual ), France. pp.P.1-P.10, ⟨10.23919/EPE20ECCEEurope43536.2020.9215619⟩

SiC MOSFETs have a low short circuit withstand time. To address this challenge, a soft shut down and two original detection methods are proposed in this paper, easily implemented and based-on (ig, vgs) diagnosis with no direct time dependency. The fi

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8310c70bea43006a41c2d300e64cf68e
https://hal.archives-ouvertes.fr/hal-02980827/document

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Circuit-type modelling of SiC power Mosfet in short-circuit operation including selective fail-to-open and fail-to-short modes competition

Autor: François Boige, Frédéric Richardeau

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2019, pp.113501. ⟨10.1016/j.microrel.2019.113501⟩
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France. ⟨10.1016/j.microrel.2019.113501⟩
30th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis, Sep 2019, Toulouse, France

International audience; SiC Mosfet has very unique properties in extreme operation such as a well-known fail-to-short failure mode but in competition with a lesser known fail-to-open failure mode. These two modes are generally studied and modelled se

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e4a96b8e3d8f4297a51f851ac3d264c
https://hal.archives-ouvertes.fr/hal-02334401

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Short-circuit robustness of parallel SiC MOSFETs and fail-safe mode strategy

Autor: Alberto Castellazzi, Asad Fayyaz, Frédéric Richardeau, Sebastien Vinnac, François Boige

Publikováno v: European Power Elecrtonics and Applications 2019-IEEE ECCE Europe
European Power Elecrtonics and Applications 2019-IEEE ECCE Europe, Sep 2019, Gênes, Italy

International audience; Silicon carbide (SiC) power MOSFETs exhibit some key differences compared with Silicon (Si) MOSFETs and IGBTs. In particular, both their intrinsic (i.e., material technology related) and extrinsic (i.e., device generation rela

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::47bb5ca8cb3f48c7fbcf4d3c13b08e06
https://hal.archives-ouvertes.fr/hal-02334405/document

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Physical origin of the gate current surge during short-circuit operation of SiC MOSFET

Autor: David Trémouilles, François Boige, Frédéric Richardeau

Publikováno v: IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2019, 40 (5), pp.666-669. ⟨10.1109/LED.2019.2896939⟩
IEEE Electron Device Letters, 2019, 40 (5), pp.666-669. ⟨10.1109/led.2019.2896939⟩

International audience; During the short circuit of a vertical 4H-SiCpower MOSFET, a high gate current starts to flow throughthe gate dielectric. We demonstrate that the Schottky emis-sion is the main physical mechanisms.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4bb8a1da55a0d3644bfa108935051509
https://hal.laas.fr/hal-02020275

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SiC power MOSFET in short-circuit operation: Electro-thermal macro-modelling combining physical and numerical approaches with circuit-type implementation

Autor: Stéphane Lefebvre, Frédéric Richardeau, François Boige, Marc Cousineau

Publikováno v: Mathematics and Computers in Simulation
Mathematics and Computers in Simulation, Elsevier, 2019, 158, pp.375-386. ⟨10.1016/j.matcom.2018.09.020⟩

International audience; The purpose of this paper is to describe, for the first time, a global transient electrothermal model of (SiC) power MOSFETs during accidental short-circuit (SC) operations. The developed models allow to analysis an inverter-l

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6b95d8979911d50ecc2816bd966e1288
https://hal.archives-ouvertes.fr/hal-02179525/file/MATCOMV3_FB.pdf

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Gate leakage-current, damaged gate and open-circuit failure-mode of recent SiC Power Mosfet : Overview and analysis of unique properties for converter protection and possible future safety management

Autor: Frédéric Richardeau, Stéphane Lefebvre, François Boige

Publikováno v: 2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC)
2018 IEEE International Conference on Electrical Systems for Aircraft, Railway, Ship Propulsion and Road Vehicles & International Transportation Electrification Conference (ESARS-ITEC), Nov 2018, Nottingham, France. pp.1-6, ⟨10.1109/ESARS-ITEC.2018.8607551⟩

International audience; The silicon carbide MOSFETs tend to become the standard for high-performance medium voltage power electronics in terms of compactness and efficiency. Although the weakness of its gate-oxide and the relatively low short-circuit

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::bfcb71df7106f9f20c630b37be52701a
https://hal.archives-ouvertes.fr/hal-02180839

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Ensure an original and safe 'fail-to-open' mode in planar and trench power SiC MOSFET devices in extreme short-circuit operation

Autor: François Boige, Stéphane Lefebvre, Abdelhakim Bourennane, Jean-Marc Blaquiere, Frédéric Richardeau, Gerard Guibaud

Publikováno v: 29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 )
29th European Symposium on Reliability of Electron Devices, Failure Physics and Analysis ( ESREF 2018 ), Oct 2018, Aalborg, Denmark. pp.598-603, ⟨10.1016/j.microrel.2018.07.026⟩
Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2018, 88-90, pp.598-603. ⟨10.1016/j.microrel.2018.07.026⟩

International audience; The purpose of this paper is to present a complete experimentation of the two failure modes in competition that can appear during short-circuit (SC) fault operation of single-chip 1,2kV SiC MOSFETs from different manufacturers

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::016d1d4385282b2398d8103e93d9ae3f
https://hal.science/hal-02180574/document

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Gate leakage-current analysis and modelling of planar and trench power SiC MOSFET devices in extreme short-circuit operation

Autor: Frédéric Richardeau, François Boige

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.532-538. ⟨10.1016/j.microrel.2017.06.084⟩

International audience; The purpose of this paper is to present a complete analysis of the gate leakage-current behaviour during short-circuit (SC) fault operation of 1200V SiC MOSFETs from five different manufacturers including planar and trench-gat

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93c335bfaa23105f57ad9e9e5966813e
https://hal.archives-ouvertes.fr/hal-02180620

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Investigation on damaged planar-oxide of 1200 V SiC power MOSFETs in non-destructive short-circuit operation

Autor: Stéphane Lefebvre, G. Guibaud, David Trémouilles, Frédéric Richardeau, François Boige

Publikováno v: Microelectronics Reliability
Microelectronics Reliability, Elsevier, 2017, 76-77, pp.500-506. ⟨10.1016/j.microrel.2017.06.085⟩
Microelectronics Reliability, 2017, 76-77, pp.500-506. ⟨10.1016/j.microrel.2017.06.085⟩

International audience; The purpose of this paper is to present an extensive study of three 1200 V silicon carbide (SiC) Power MOSFETs in non-destructive, but leading to degradations, short-circuit operation. Unusually, as compared with equivalent de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1436362b05dc87d041c227c86d6f0ae2
https://hal.laas.fr/hal-01643030

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