Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Frédéric Gonzatti"'
Growth Kinetics and Boron-Doping of Very High Ge Content Si1-xGex for Sources and Drains Engineering
Publikováno v:
ECS Transactions. 6:397-400
We have studied the in-situ boron-doping of high Ge content Si1- xGex layers (x = 0.3, 0.4 and 0.5). Those layers have been grown at low pressure (20 Torr) and low temperature (600{degree sign}C to 650{degree sign}C) with a heavily chlorinated chemis
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8d89dd7bc77a4b2c08401dec70cdf4a4
https://doi.org/10.1149/1.2727425
https://doi.org/10.1149/1.2727425
Autor:
Isabelle Huyet, Cyril Guedj, Jean-Michel Hartmann, R. Cipro, Pascal Besson, Marie-Christine Roure, Mickael Martin, Thomas Signamarcheix, Virginie Loup, Christelle Veytizou, Christophe Figuet, Walter Schwarzenbach, Maurice Rivoire, Catherine Euvrard-Colnat, Anne-Marie Papon, Julien Duvernay, Franck Bassani, J. Widiez, Daniel Delprat, Thierry Baron, Aurélien Seignard, Yann Bogumilowicz, Frédéric Gonzatti, E. Augendre, Sébastien Sollier, Frederic Mazen
Publikováno v:
ECS Transactions
ECS Transactions, Electrochemical Society, Inc., 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, Electrochemical Society, Inc., 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
ECS Transactions, 2014, 64 (5), pp.35-48. ⟨10.1149/06405.0035ecst⟩
Bulk silicon device technologies are reaching fundamental scaling limitations. The 28nm and 22nm technology nodes have seen the introduction of Ultra-Thin Body and Buried Oxide Fully Depleted SOI (UTBB-FDSOI) [1] and FinFETs [2], respectively. Fully
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::caa78b61c4d01a6c5a812adac15520b5
https://hal.univ-grenoble-alpes.fr/hal-01991972
https://hal.univ-grenoble-alpes.fr/hal-01991972
Autor:
Frank Torregrosa, Hasnaa Etienne, Guillaume Sempere, Gilles Mathieu, Laurent Roux, Frédéric Milesi, Frédéric Gonzatti, Edmund G. Seebauer, Susan B. Felch, Amitabh Jain, Yevgeniy V. Kondratenko
Publikováno v:
AIP Conference Proceedings.
Thanks to the European Projects SEA‐NET and PULLNANO, an industrial version of the IBS Plasma Ion Implantation tool has been installed in LETI for the fabrication of Ultra‐Shallow Junctions for 45 and 32 nm CMOS on 200 and 300 mm wafers. In this
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67e0552b1516f2b744d4808d6930c507
https://doi.org/10.1063/1.3033669
https://doi.org/10.1063/1.3033669
Publikováno v:
ECS Meeting Abstracts. :2431-2431
Deals with the low temperature and high temperature boron and phosphorous doping of Si for raised sources and drains and MEMS purposes. Hydrogenated (NSEG) and chlorinated (SEG) chemistries have been probed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a69d4994f3b21882266907c97fa3deb5
https://doi.org/10.1149/ma2008-02/37/2431
https://doi.org/10.1149/ma2008-02/37/2431
Growth Kinetics and Boron-Doping of very High Ge Content Si1-xGex for Sources and Drains Engineering
Publikováno v:
ECS Meeting Abstracts. :602-602
not Available.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8b26235568395288e39cf2193c88fbe
https://doi.org/10.1149/ma2007-01/12/602
https://doi.org/10.1149/ma2007-01/12/602