Transport and Magnetism in p-type cubic (Ga,Mn)N

Autor: Edmonds, KW, Novikov, SV, Sawicki, M, Campion, RP, Staddon, C. R., Giddings, AD, Zhao, LX, Wang, KY, Dietl, T, Foxon, CT, Gallagher, BL

Publikováno v: Part of this manuscript was published in Applied Physics Letters, vol. 86, p. 152114 (2005)

The electrical and magnetic properties of p-type cubic (Ga,Mn)N thin films grown by plasma-assisted molecular beam epitaxy are reported. Hole concentrations in excess of 1018 cm-3 at room temperature are observed. Activated behaviour is observed down

Externí odkaz: http://arxiv.org/abs/cond-mat/0411476

Phonon Absorption at the Magneto-Roton Minimum in the Fractional Quantum Hall Effect

Autor: Mellor, CJ, Eyles, RH, Digby, JE, Kent, AJ, Benedict, KA, Challis, LJ, Henini, M, Foxon, CT, Harris, JJ

We have made the first phonon absorption measurements in the fractional quantum Hall r\'egime. Experiments have been conducted on two samples which have similar electron densities but greatly differing mobilities. The energy gaps as measured by activ

Externí odkaz: http://arxiv.org/abs/cond-mat/9408034

Characterization of p-GaN$_{1−x}$ As$_{x}$/n-GaN PN junction diodes

Autor: Qian, H, Lee, KB, Vajargah, SH, Novikov, SV, Guiney, I, Zhang, S, Zaidi, ZH, Jiang, S, Wallis, DJ, Foxon, CT, Humphreys, CJ, Houston, PA

The structural properties and electrical conduction mechanisms of p-type amorphous GaN$_{1−x}$ As$_{x}$ /n-type crystalline GaN PN junction diodes are presented. A hole concentration of 8.5 × 10$^{19}$ cm$^{-3}$ is achieved which allows a specific

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::954c2a558f2a62b28f39c74e4ed90263
https://www.repository.cam.ac.uk/handle/1810/263985

Direct band-gap crossover in epitaxial monolayer boron nitride.

Autor: Elias C; Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095, Montpellier, France., Valvin P; Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095, Montpellier, France., Pelini T; Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095, Montpellier, France., Summerfield A; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Mellor CJ; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Cheng TS; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Eaves L; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Foxon CT; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Beton PH; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Novikov SV; School of Physics and Astronomy, University of Nottingham, Nottingham, NG7 2RD, UK., Gil B; Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095, Montpellier, France., Cassabois G; Laboratoire Charles Coulomb, UMR5221 CNRS-Université de Montpellier, 34095, Montpellier, France. guillaume.cassabois@umontpellier.fr.

Publikováno v: Nature communications [Nat Commun] 2019 Jun 14; Vol. 10 (1), pp. 2639. Date of Electronic Publication: 2019 Jun 14.

Moiré-Modulated Conductance of Hexagonal Boron Nitride Tunnel Barriers.

Autor: Summerfield A; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Kozikov A, Cheng TS; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Davies A; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Cho YJ; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Khlobystov AN, Mellor CJ; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Foxon CT; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Watanabe K; National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibraki 305-0044 , Japan., Taniguchi T; National Institute for Materials Science , 1-1 Namiki , Tsukuba , Ibraki 305-0044 , Japan., Eaves L; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Novoselov KS, Novikov SV; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom., Beton PH; School of Physics and Astronomy , University of Nottingham , Nottingham , NG7 2RD , United Kingdom.

Publikováno v: Nano letters [Nano Lett] 2018 Jul 11; Vol. 18 (7), pp. 4241-4246. Date of Electronic Publication: 2018 Jun 27.