Zobrazeno 1 - 10
of 44
pro vyhledávání: '"Fouts, D.J."'
Autor:
Weatherford, T.R., Radice, R., Eskins, D., Devers, J., Fouts, D.J., Marshall, P.W., Marshall, C.J., Dietrich, H., Twigg, M., Milano, R.
The article of record as published may be found at http://dx.doi.org/101109/23.659047 Computer simulation results are reported on transistor design and single-event charge collection modeling of metal-semiconductor field effect transistors (MESFETs)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od______2778::a5e105e64c4d805d65484be3ede70c89
https://hdl.handle.net/10945/60987
https://hdl.handle.net/10945/60987
Publikováno v:
2008 42nd Asilomar Conference on Signals, Systems & Computers; 2008, p176-180, 5p
Autor:
Shehata, K.A., Fouts, D.J.
Publikováno v:
Proceedings of Technical Papers International Symposium on VLSI Technology, Systems & Applications; 1997, p283-287, 5p
Publikováno v:
Proceedings of 26th Southeastern Symposium on System Theory; 1994, p390-394, 5p
Publikováno v:
IEEE Journal of Solid-State Circuits; Jun2002, Vol. 37 Issue 6, p751-759, 9p
Publikováno v:
IEEE Transactions on Nuclear Science; Dec97 Part 1 of 3, Vol. 44 Issue 6, p2298, 8p, 8 Diagrams, 2 Charts, 2 Graphs
Autor:
Fouts, D.J., Weatherford, T.R., McMorrow, D., Wolfe, K., Van Dyk, S.E., Melinger, J.S., Tran, L.H., Campbell, A.B.
Publikováno v:
IEEE Transactions on Nuclear Science; 1995, Vol. 42 Issue 6, p1829-1836, 8p
Publikováno v:
IEEE Transactions on Nuclear Science; 1994, Vol. 41 Issue 6, p2244-2251, 8p
Autor:
Fouts, D.J.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1992, Vol. 27 Issue 5, p802-809, 8p
Autor:
Fouts, D.J., Butner, S.E.
Publikováno v:
IEEE Journal of Solid-State Circuits; 1991, Vol. 26 Issue 9, p1199-1211, 13p