Zobrazeno 1 - 10
of 527
pro vyhledávání: '"Fournel, F"'
Autor:
Spindlberger, L., Aberl, J., Vukušić, L., Fromherz, T., Hartmann, J.-M., Fournel, F., Prucnal, S., Murphy-Armando, F., Brehm, M.
Publikováno v:
In Materials Science in Semiconductor Processing October 2024 181
Autor:
Colonel, Lucas, Lomonaco, Q., Abadie, K., Michaud, L. G., Morales, C., Moreau, S., Mazen, F., Fournel, F., Landru, D., Rieutord, F.
Publikováno v:
Journal of Applied Physics; 7/28/2024, Vol. 136 Issue 4, p1-7, 7p
Publikováno v:
In Materials Science in Semiconductor Processing December 2024 184
Autor:
Boulard, F., Gros, V., Porzier, C., Brunet, L., Lapras, V., Fournel, F., Truffier-Boutry, D., Autillo, D., Ruault, P., Keovisai, M., Posseme, N.
Publikováno v:
In Microelectronic Engineering 15 September 2022 265
Publikováno v:
In Materials Today Nano March 2021 13
Publikováno v:
Journal of Applied Physics; 12/7/2022, Vol. 132 Issue 21, p1-11, 11p
Autor:
Gaberel, T., Gakuba, C., Fournel, F., Le Blanc, E., Gaillard, C., Peyro-Saint-Paul, L., Chaillot, F., Tanguy, P., Parienti, J.-J., Emery, E.
Publikováno v:
In Neurochirurgie February 2019 65(1):14-19
Autor:
Ares, N., Golovach, V. N., Katsaros, G., Stoffel, M., Fournel, F., Glazman, L. I., Schmidt, O. G., De Franceschi, S.
Publikováno v:
Phys. Rev. Lett. 110, 046602 (2013)
Electrically tunable g-factors in quantum dots are highly desirable for applications in quantum computing and spintronics. We report giant modulation of the hole g-factor in a SiGe nanocrystal when an electric field is applied to the nanocrystal alon
Externí odkaz:
http://arxiv.org/abs/1208.0476
Autor:
Katsaros, G., Golovach, V. N., Spathis, P., Ares, N., Stoffel, M., Fournel, F., Schmidt, O. G., Glazman, L. I., De Franceschi, S.
Publikováno v:
Phys. Rev. Lett. 107, 246601 (2011)
Spin-selective tunneling of holes in SiGe nanocrystals contacted by normal-metal leads is reported. The spin selectivity arises from an interplay of the orbital effect of the magnetic field with the strong spin-orbit interaction present in the valenc
Externí odkaz:
http://arxiv.org/abs/1107.3919
Autor:
Katsaros, G., Spathis, P., Stoffel, M., Fournel, F., Mongillo, M., Bouchiat, V., Lefloch, F., Rastelli, A., Schmidt, O. G., De Franceschi, S.
The epitaxial growth of germanium on silicon leads to the self-assembly of SiGe nanocrystals via a process that allows the size, composition and position of the nanocrystals to be controlled. This level of control, combined with an inherent compatibi
Externí odkaz:
http://arxiv.org/abs/1005.1816