Zobrazeno 1 - 10
of 67
pro vyhledávání: '"Fortunato Pezzimenti"'
Autor:
Demetrio Iero, Riccardo Carotenuto, Massimo Merenda, Fortunato Pezzimenti, Francesco Giuseppe Della Corte
Publikováno v:
Energies, Vol 15, Iss 9, p 3029 (2022)
In the last few years, the wide diffusion of rechargeable devices has fueled the research interest in wireless power transfer (WPT) technology that offers advantages such as safety, flexibility, and ease of use. Different standards have been develope
Externí odkaz:
https://doaj.org/article/802fad979dcd43568dd6fd9094aa04ec
Autor:
Riccardo Carotenuto, Fortunato Pezzimenti, Francesco G. Della Corte, Demetrio Iero, Massimo Merenda
Publikováno v:
Sensors, Vol 21, Iss 15, p 4963 (2021)
Measuring the distance between two points has multiple uses. Position can be geometrically calculated from multiple measurements of the distance between reference points and moving sensors. Distance measurement can be done by measuring the time of fl
Externí odkaz:
https://doaj.org/article/727d6d17af714c2e9edc363be3d615d0
Publikováno v:
Journal of Computational Electronics. 20:1296-1309
This paper deals with the design and optimization of a triple-junction (TJ) solar cell using indium gallium nitride (InGaN) material. Two tunnel diodes are used to ensure connection between the different subcells. A comprehensive study is performed b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4d455d1ea9a0577a59c8d97cca606a92
https://doi.org/10.1007/s10825-021-01695-7
https://doi.org/10.1007/s10825-021-01695-7
Publikováno v:
Silicon. 14:2265-2274
In this paper, the role of different high-k materials in enhancing the efficiency of a metal insulator semiconductor (MIS) solar cell is investigated in detail. In order to overcome the traditional SiO2 disadvantages, alternative dielectrics, namely
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f0119e5f500e74f2e15a6893673829d
https://doi.org/10.1007/s12633-021-01025-3
https://doi.org/10.1007/s12633-021-01025-3
Autor:
Lakhdar Dehimi, Nour eddine Athamena, Fortunato Pezzimenti, H. Bencherif, M.L. Megherbi, Francesco G. Della Corte
Publikováno v:
Silicon. 13:3629-3637
The carbon vacancy in 4H-SiC is an important recombination center of the minority carrier and a direct consequence of SiC-based device degradation. In 4H-SiC, this defect acts as the primary carrier-lifetime killer. Whether, low-energy electron radia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::951787335754e2a011f96eafbcea8d53
https://doi.org/10.1007/s12633-020-00920-5
https://doi.org/10.1007/s12633-020-00920-5
Publikováno v:
International Journal of Electrical and Electronic Engineering & Telecommunications. :233-242
All technology instruments use electrical and electronic systems that, before their production, need to be verified via simulation software. A new simulation software called Python for Analog and Mixed Signals (PyAMS) has been programmed. As presente
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fe37c7929e9fe5affea4e775c758a4e5
https://doi.org/10.18178/ijeetc.10.4.233-242
https://doi.org/10.18178/ijeetc.10.4.233-242
Publikováno v:
Silicon. 13:3239-3247
This paper assesses the electrical performance of a metal-insulator-semiconductor (MIS) solar cell designed by using different high-k dielectrics. The study is aimed to achieve the optimized device geometrical dimensions while improving the quantum m
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d0d74bc73722eacd0deb38ec64afc270
https://doi.org/10.1007/s12633-020-00660-6
https://doi.org/10.1007/s12633-020-00660-6
Publikováno v:
Solid State Electronics Letters, Vol 2, Iss, Pp 49-54 (2020)
The current-voltage (ID-VD) characteristics of W/4H-SiC Schottky barrier diodes (SBDs) are investigated in the 303–448 K temperature range by means of a numerical simulation study. Results showed a good agreement with measurements for a bias curren
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::94a849492d86c14d3d4dfd543d30bfdf
http://www.sciencedirect.com/science/article/pii/S2589208820300168
http://www.sciencedirect.com/science/article/pii/S2589208820300168
Autor:
Elisa Demetra Mallemace, M.L. Megherbi, Fortunato Pezzimenti, Lakhdar Dehimi, H. Bencherif, Francesco G. Della Corte, Sandro Rao
Publikováno v:
Electronics, Vol 10, Iss 2517, p 2517 (2021)
Electronics
Volume 10
Issue 20
Electronics
Volume 10
Issue 20
In this paper, we report experimental findings on a 4H-SiC-based p-i-n photodiode. The fabricated device has a p-type region formed by ion-implantation of aluminum (Al) in a nitrogen doped n-type layer. The dark reverse current density reaches 38.6 n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::eca9795c3ca5ff15d8797e3152020f75
https://www.mdpi.com/2079-9292/10/20/2517
https://www.mdpi.com/2079-9292/10/20/2517
Autor:
Massimo Merenda, Demetrio Iero, Francesco G. Della Corte, Riccardo Carotenuto, Fortunato Pezzimenti
Publikováno v:
Sensors (Basel, Switzerland)
Sensors, Vol 21, Iss 4963, p 4963 (2021)
Sensors
Volume 21
Issue 15
Sensors, Vol 21, Iss 4963, p 4963 (2021)
Sensors
Volume 21
Issue 15
Measuring the distance between two points has multiple uses. Position can be geometrically calculated from multiple measurements of the distance between reference points and moving sensors. Distance measurement can be done by measuring the time of fl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52ef6cbb775a4a2bde2dfa8af42c6b00
http://europepmc.org/articles/PMC8347942
http://europepmc.org/articles/PMC8347942