Zobrazeno 1 - 10
of 301
pro vyhledávání: '"Forneris J"'
Autor:
Zanelli, G., Moreva, E., Bernardi, E., Losero, E., Tchernij, S. Ditalia, Forneris, J., Pastuović, Ž., Traina, P., Degiovanni, I. P., Genovese, M.
The Nitrogen-Vacancy (NV) center in diamond is an intriguing electronic spin system with applications in quantum radiometry, sensing and computation. In those experiments, a bias magnetic field is commonly applied along the NV symmetry axis to elimin
Externí odkaz:
http://arxiv.org/abs/2412.17608
Autor:
Pugliese, V., Hernández, E. Nieto, Corte, E., Govoni, M., Tchernij, S. Ditalia, Olivero, P., Forneris, J.
Split-vacancy color centers in diamond are promising solid state platforms for the implementation of photonic quantum technologies. These luminescent defects are commonly fabricated upon low energy ion implantation and subsequent thermal annealing. T
Externí odkaz:
http://arxiv.org/abs/2409.06359
Autor:
Hernández, E. Nieto, Yağcı, H. B., Pugliese, V., Aprà, P., Cannon, J. K., Bishop, S. G., Hadden, J., Tchernij, S. Ditalia, Olivero, Bennett, A. J., Forneris, J.
Publikováno v:
Appl. Phys. Lett. 124, 124003 (2024)
Single-photon emitters (SPEs) within wide-bandgap materials represent an appealing platform for the development of single-photon sources operating at room temperatures. Group III- nitrides have previously been shown to host efficient SPEs which are a
Externí odkaz:
http://arxiv.org/abs/2310.20540
Autor:
Hernandez, E. Nieto, Andrini, G., Crnjac, A., Brajkovic, M., Picariello, F., Corte, E., Pugliese, V., Matijević, M., Aprà, P., Varzi, V., Forneris, J., Genovese, M., Siketic, Z., Jaksic, M., Tchernij, S. Ditalia
Nitrogen-Vacancy (NV) centers in diamond are promising systems for quantum technologies, including quantum metrology and sensing. A promising strategy for the achievement of high sensitivity to external fields relies on the exploitation of large ense
Externí odkaz:
http://arxiv.org/abs/2310.19526
Autor:
Andrini, G., Zanelli, G., Tchernij, S. Ditalia, Corte, E., Hernandez, E. Nieto, Verna, A., Cocuzza, M., Bernardi, E., Virzì, S., Traina, P., Degiovanni, I. P., Genovese, M., Olivero, P., Forneris, J.
The recent demonstration of optically active telecom emitters makes silicon a compelling candidate for solid state quantum photonic platforms. Particularly fabrication of the G center has been demonstrated in carbon-rich silicon upon conventional the
Externí odkaz:
http://arxiv.org/abs/2304.10132
Autor:
Yağcı, H.B., Hernández, E. Nieto, Cannon, J.K., Bishop, S.G., Corte, E., Hadden, J.P., Olivero, P., Forneris, J., Bennett, A.J.
Publikováno v:
In Optical Materials October 2024 156
Effects of the interstrip gap on the efficiency and response of Double Sided Silicon Strip Detectors
Autor:
Torresi D., Forneris J., Grassi L., Acosta L., Di Pietro A., Figuera P., Fisichella M., Grilj V., Jakic M., Lattuada M., Mijatovic T., Milin M., Prepolec L., Skukan N., Soic N., Stanko D., Tokic V., Uroic M., Zadro M.
Publikováno v:
EPJ Web of Conferences, Vol 117, p 10009 (2016)
In this work the effects of the segmentation of the electrodes of Double Sided Silicon Strip Detectors (DSSSDs) are investigated. In order to characterize the response of the DSSSDs we perform a first experiment by using tandem beams of different ene
Externí odkaz:
https://doaj.org/article/19845373a6154011a593307afbda61e7
Autor:
Mali, M., Artuso, M., Bäni, L., Bartosik, M., Bellini, V., Bentele, B., Bergonzo, P., Bes, A., Brom, J-M., Chiodini, G., Chren, D., Cindro, V., Claus, G., Collot, J., Cumalat, J., Dabrowski, A., Dauvergne, D., Tchernij, S. Ditalia, Eigen, G., Eremin, V., Everaere, P., Forneris, J., Gallin-Martel, L., Gallin-Martel, M-L., Gan, K.K., Gastal, M., Gentry, A., Goffe, M., Goldstein, J., Golubev, A., Gorišek, A., Grigoriev, E., Grosse-Knetter, J., Hiti, B., Hits, D., Hoarau, C., Hoeferkamp, M., Hosslet, J., Hügging, F., Hutson, C., Jackman, R., Jennings-Moors, R., Kagan, H., Kanxheri, K., Kis, M., Kramberger, G., Kruger, M., Kuleshov, S., Lacoste, A., Lukosi, E., Maazouzi, C., Mandić, I., Marcatili, S., Marino, A., Mathieu, C., Menichelli, M., Mikuž, M., Molle, R., Morozzi, A., Moscatelli, F., Moss, J., Mountain, R., Muraz, J-F., Narazyanan, E.A., Oh, A., Olivero, P., Passeri, D., Pernegger, H., Perrino, R., Picollo, F., Porter, A., Portier, A., Potenza, R., Quadt, A., Rarbi, F., Re, A., Reichmann, M., Roe, S., Rossetto, O., Salter, P., Becerra, D.A. Sanz, Schmidt, C.J., Schnetzer, S., Seidel, S., Servoli, L., Shivaraman, R., Smith, D.S., Sopko, B., Sopko, V., Sorenson, J., Spagnolo, S., Spanier, S., Stenson, K., Stone, R., Stugu, B., Sutera, C., Traeger, M., Trischuk, W., Truccato, M., Tuve, C., Velthuis, J., Verbitskaya, E., Wagner, S., Wallny, R., Welch, J., Wengler, T., Yamouni, M., Zalieckas, J., Zavrtanik, M.
Publikováno v:
In Nuclear Inst. and Methods in Physics Research, A May 2024 1062
Autor:
Tchernij, S. Ditalia, Lühmann, T., Corte, E., Sardi, F., Picollo, F., Traina, P., Brajkovic, M., Crnjac, A., Pezzagna, S., Degiovanni, I. P., Moreva, E., Aprà, P., Olivero, P., Siketić, Z., Meijer, J., Genovese, M., Forneris, J.
We report on the creation and characterization of the luminescence properties of high-purity diamond substrates upon F ion implantation and subsequent thermal annealing. Their room-temperature photoluminescence emission consists of a weak emission li
Externí odkaz:
http://arxiv.org/abs/2009.13385
Autor:
Moreva, E., Bernardi, E., Traina, P., Sosso, A., Tchernij, S. Ditalia, Forneris, J., Picollo, F., Brida, G., Pastuovic, Z., Degiovanni, I. P., Olivero, P., Genovese, M.
Publikováno v:
Phys. Rev. Applied 13, 054057 (2020)
Nitrogen-vacancy centers in diamond allow measurement of environment properties such as temperature, magnetic and electric fields at nanoscale level, of utmost relevance for several research fields, ranging from nanotechnologies to bio-sensing. The w
Externí odkaz:
http://arxiv.org/abs/1912.10887