Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Foqia Rehman"'
Publikováno v:
The Journal of Physical Chemistry C. 126:16894-16902
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01056b5f7cebeee3bc2153c8947a4380
https://doi.org/10.1021/acs.jpcc.2c05389
https://doi.org/10.1021/acs.jpcc.2c05389
Autor:
Giulio D’Acunto, Rosemary Jones, Lucía Pérez Ramírez, Payam Shayesteh, Esko Kokkonen, Foqia Rehman, Florence Lim, Fabrice Bournel, Jean-Jacques Gallet, Rainer Timm, Joachim Schnadt
Publikováno v:
The Journal of Physical Chemistry C. 126:12210-12221
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::640d46e85475658da0c2aa6b04350f69
https://doi.org/10.1021/acs.jpcc.2c02683
https://doi.org/10.1021/acs.jpcc.2c02683
Autor:
Giulio D’Acunto, Esko Kokkonen, Payam Shayesteh, Virginia Boix, Foqia Rehman, Zohreh Mosahebfard, Erik Lind, Joachim Schnadt, Rainer Timm
Publikováno v:
Faraday Discussions. 236:71-85
In situ and time-resolved APXPS reveals the initial ALD process beyond the standard ligand exchange model, resulting in native oxide-free InAs/HfO2 interfaces for high-speed MOSFET.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::32d59b5bd3901ba23702c84c69e10e0f
https://doi.org/10.1039/d1fd00116g
https://doi.org/10.1039/d1fd00116g
Autor:
Giulio D'Acunto, Payam Shayesteh, Esko Kokkonen, Virginia Boix de la Cruz, Foqia Rehman, Zohreh Mosahebfard, Erik Lind, Joachim Schnadt, Rainer Timm
Publikováno v:
Surfaces and Interfaces. 39:102927
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::89ec3cd3f9ca31a33ac496b186c2d1a2
https://doi.org/10.1016/j.surfin.2023.102927
https://doi.org/10.1016/j.surfin.2023.102927
Autor:
Giulio, D'Acunto, Esko, Kokkonen, Payam, Shayesteh, Virginia, Boix, Foqia, Rehman, Zohreh, Mosahebfard, Erik, Lind, Joachim, Schnadt, Rainer, Timm
Publikováno v:
Faraday discussions. 236
Atomic layer deposition (ALD) is one of the backbones for today's electronic device fabrication. A critical property of ALD is the layer-by-layer growth, which gives rise to the atomic-scale accuracy. However, the growth rate - or growth per cycle -
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::509e6188c966db8ca8fc72e3add01f05
https://pubmed.ncbi.nlm.nih.gov/35506440
https://pubmed.ncbi.nlm.nih.gov/35506440
Autor:
Tamires Gallo, Rainer Timm, Erik Lind, Giulio D'Acunto, Esko Kokkonen, Yen Po Liu, Joachim Schnadt, Sofie Yngman, Foqia Rehman, Sarah R. McKibbin, Andrea Troian, Zhihua Yong
Publikováno v:
ACS Applied Electronic Materials. 2:3915-3922
III-V semiconductors, such as InAs, with an ultrathin high-κ oxide layer have attracted a lot of interests in recent years as potential next-generation metal-oxide-semiconductor field-effect transistors, with increased speed and reduced power consum
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffc3784ee556a9c982b27725aa19010b
https://doi.org/10.1021/acsaelm.0c00775
https://doi.org/10.1021/acsaelm.0c00775
Autor:
Felipe Lopes da Silva, Mikko Ritala, Mikko Kaipio, Esko Kokkonen, Heta Nieminen, Samuli Urpelainen, Niclas Johansson, Ville Miikkulainen, Foqia Rehman, Evgeniy Redekop, Unni Olsbye
An experimental approach is described in which well-defined perturbations of the gas feed into an Ambient Pressure X-ray Photoelectron Spectroscopy (APXPS) cell are fully synchronized with the time-resolved x-ray photoelectron spectroscopy data acqui
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7260cdba90a532f139b54ee610b034a5
http://hdl.handle.net/10138/342264
http://hdl.handle.net/10138/342264
Autor:
S. Khurshid Hasanain, S. Ismat Shah, Sabeen Faridi, Foqia Rehman, Shahzad Hussain, G. Hassnain Jaffari, Turab Ali Abbas
Publikováno v:
Journal of the American Ceramic Society. 96:3141-3148
The work presents a comparative study of the effects of divalent Ba, Sr, and Pb substituents on the multiferroic properties of BiFeO3. The multiferroic properties of Bi0.75A0.25FeO3 (A = Sr, Pb, Ba) solid solution have been explained taking into acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e1851115f1b49fda077650a3b4cf8950
https://doi.org/10.1111/jace.12458
https://doi.org/10.1111/jace.12458