Zobrazeno 1 - 10
of 25
pro vyhledávání: '"Fon Shan Yeh"'
Autor:
Wan Fang Chung, Ting-Chang Chang, Yi Hsien Chen, Tseung-Yuen Tseng, Yu Chun Chen, Fon Shan Yeh, Hung Wei Li, Ya-Hsiang Tai, Shih Cheng Chen
Publikováno v:
Thin Solid Films. 520:1432-1436
This paper investigates the origin of the bias stability under ambient gas (oxygen, moisture and vacuum) of In–Ga–Zn–O thin film transistors with different annealing temperatures. In Zn-based TFTs, the electrical characteristic of device is a s
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8a06231ae7b791ec1ffd321765a0863
https://doi.org/10.1016/j.tsf.2011.09.033
https://doi.org/10.1016/j.tsf.2011.09.033
Publikováno v:
Advanced Materials. 23:902-905
Plastic-substrate-based electronic devices are attractive because of their inherit merits of low cost, light weight, environmentally friendly low temperature processing, and the application in fl exible displays and integrated circuits (ICs). Fast pr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1eb9ba6692acb07704bd980b3fc969b1
https://doi.org/10.1002/adma.201002946
https://doi.org/10.1002/adma.201002946
Autor:
Chia Wei Chan, Wen Ping Nien, Ya-Hsiang Tai, Ting-Chang Chang, S. M. Sze, Chieh Ming Hsieh, Shih Cheng Chen, Hung Wei Li, Fon Shan Yeh
Publikováno v:
Thin Solid Films. 519:1677-1680
The authors provide the formation and memory effects of W nanocrystals nonvolatile memory in this study. The charge trapping layer of stacked a-Si and WSi2 was deposited by low pressure chemical vapor deposition (LPCVD) and was oxidized by in-situ st
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e240f19d7a712d8aa54888d6fecb6fea
https://doi.org/10.1016/j.tsf.2010.08.167
https://doi.org/10.1016/j.tsf.2010.08.167
Autor:
Ming-Fu Li, P. T. Lee, Sheng-Chi Lin, Shui-Jinn Wang, M. F. Chang, N. C. Su, W. B. Chen, C. C. Liao, Albert Chin, Fon Shan Yeh
Publikováno v:
Microelectronic Engineering. 86:1728-1732
The unwanted high threshold voltage (V"t) is the major challenge for metal-gate/[email protected] CMOS especially at small equivalent-oxide-thickness (EOT). We have investigated the high V"t issue that is due to flat-band voltage (V"f"b) roll-off at
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c24e373339a6fde25b49ee9064e8a1
https://doi.org/10.1016/j.mee.2009.03.075
https://doi.org/10.1016/j.mee.2009.03.075
Publikováno v:
2010 International Electron Devices Meeting.
High performance novel RRAM of 0.3 µW set power (0.1 µA at 3 V), 0.6 nW reset power (−0.3 nA at −1.8 V), fast 20 ns switching time, ultra-low 6 fJ switching energy, large 7×102 resistance window for 104 sec retention at 125°C, and 106 cycling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e61f9293c8b354f0249114757be9cb39
https://doi.org/10.1109/iedm.2010.5703392
https://doi.org/10.1109/iedm.2010.5703392
Publikováno v:
2010 International Electron Devices Meeting.
We report very high performance non-volatile memory on flexible plastic substrate, with ultra-low 5 µW switching power (1.6 µA at 3 V; −0.5 nA at −2 V), excellent 105 cycling endurance, large on/off retention memory window >102 even at 85°C, a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::63f4747730b70a0946d616c980e008ae
https://doi.org/10.1109/iedm.2010.5703408
https://doi.org/10.1109/iedm.2010.5703408
Publikováno v:
2009 16th IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits.
The shallow trap energy in SONOS Charge-Trapping Flash (CTF) is the fundamental challenge for required good retention, especially at elevated temperatures. Although the high temperature retention can be improved by BE-SONOS, this is traded off the sl
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::683e4f698674f40e29517be67a9deb01
https://doi.org/10.1109/ipfa.2009.5232561
https://doi.org/10.1109/ipfa.2009.5232561
Publikováno v:
Japanese Journal of Applied Physics. 50:121801
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ab091360b34ecc58eca0d98579b281eb
https://doi.org/10.7567/jjap.50.121801
https://doi.org/10.7567/jjap.50.121801
Publikováno v:
Japanese Journal of Applied Physics. 50:121801
In this study we propose a resistive random-access memory (RRAM) using stacked GeO x and PbZr0.5Ti0.5O3 (PZT). Under unipolar-mode operation, the bilayers Ni/GeO x /PZT/TaN RRAM shows a large resistance window of >102, for 85 °C retention, and a goo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::13f8f2ae0ae8dd67fb2711769b9d36da
https://doi.org/10.1143/jjap.50.121801
https://doi.org/10.1143/jjap.50.121801
Autor:
Ting-Chang Chang, Yu Ting Tsai, Chi-Wen Chen, Simon M. Sze, Tseung-Yuen Tseng, Shih Cheng Chen, Chao Cheng Lin, Fon Shan Yeh
Publikováno v:
Electrochemical and Solid-State Letters. 14:H135
The resistive random access memory has attracted much attention for nonvolatile memory application in recent years. However, there is an issue about variations of switching parameters such as set voltage and conductivity of resistance state in resist
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d58998eff47ae6e3ebf3bad1f7195682
https://doi.org/10.1149/1.3531843
https://doi.org/10.1149/1.3531843