Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Fon Shan Huang"'
Publikováno v:
The Open Materials Science Journal. 10:70-78
Nanocontact printing using hydrogen silsesquioxane (HSQ) soft stamps is studied for nanobio device fabrications in this work. The stamps with designed linewidth 80-200 nm were fabricated by low-dose e-beam lithography on HSQ films. The contact printi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e717528b4b0e7b2bffaf210af6ab678
https://doi.org/10.2174/1874088x01610010070
https://doi.org/10.2174/1874088x01610010070
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 16:101-104
A downconversion mixer using the double-balanced Gilbert cell structure is fabricated using 65-nm CMOS technology. The mixer maximum conversion gain is −0.93 dB, IF output power at the 1-dB compression point is −4 dBm, and IIP3 is 6.12 dBm with I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac0dca11fdfdf1886747ed9e8066140a
https://doi.org/10.1109/tdmr.2016.2523881
https://doi.org/10.1109/tdmr.2016.2523881
Publikováno v:
Microelectronics Reliability. 52:2655-2659
A current reused LC voltage-controlled oscillator (VCO) operating at 2.4 GHz range has been designed and fabricated. The measured output current, phase noise, and oscillation frequency after RF stress show significant parameter shifts from their fres
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0b80f7b6d8433af215a70a9f641eb41a
https://doi.org/10.1016/j.microrel.2012.04.007
https://doi.org/10.1016/j.microrel.2012.04.007
Publikováno v:
ECS Journal of Solid State Science and Technology. 1:P190-P196
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::974559c6e9df59d8c93a638f6c8f59c0
https://doi.org/10.1149/2.018204jss
https://doi.org/10.1149/2.018204jss
Autor:
Wen-Kuan Yeh, Fon-Shan Huang, Kwang-Jow Gan, Po-Ying Chen, Chun-Yu Chen, Yu-Ting Chen, Chia-Wei Hsu, Yean-Kuen Fang
Publikováno v:
IEEE Transactions on Device and Materials Reliability. 11:7-12
The impact of the Si cap/SiGe layer on the Hf-based high-k /metal gate SiGe channel pMOSFET performance and reliability has been investigated. We proposed an optimized strain SiGe channel with a Si cap layer to overcome the Ge diffusion and confine t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b8d8007bfff3720514dab3f240380b02
https://doi.org/10.1109/tdmr.2010.2065806
https://doi.org/10.1109/tdmr.2010.2065806
Autor:
Wen-Kuan Yeh, Fon-Shan Huang, Che-Hua Hsu, Guo-Wei Huang, Kun-Ming Chen, Cheng-Li Lin, Yi-Wen Chen, Yu-Ting Chen, Chien-Ming Lai
Publikováno v:
IEEE Transactions on Electron Devices. 58:812-818
The effects of post-NH3 plasma nitridation on device's hot-carrier instability and low-frequency noise in the Hf-based high-κ/metal-gate n-channel metal-oxide-semiconductor field-effect transistors (nMOSFETs) with gadolinium (Gd) cap layers are inve
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c5aca90ccb0f73553175a9de0e5dbe19
https://doi.org/10.1109/ted.2010.2101606
https://doi.org/10.1109/ted.2010.2101606
Publikováno v:
Japanese Journal of Applied Physics. 47:1787-1793
This paper presents the fabrication and characterization of a three-dimensional (3D) thermopile; consists of 71 Cu–Ni series-connected thermocouples on polyimide (PI) flexible substrate. Using wet etching to etch through 25 µm PI, the cold and hot
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f53a16b0f10bd5d4af505a17e6ede26c
https://doi.org/10.1143/jjap.47.1787
https://doi.org/10.1143/jjap.47.1787
Autor:
Fon-Shan Huang, Y. Y. Li, Ting-Chang Chang, Jiann Ruey Chen, M. C. Wang, Y. J. Mei, Po-Tsun Liu
Publikováno v:
Thin Solid Films. 516:470-474
For effectively reducing the off-state signal loss resulted from the a-Si:H TFTs photo leakage current, the a-Si:H TFTs with the use of ITO as source–drain metal have been fabricated for this study. Several TFT structures have been fabricated to ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e73bff9682fffe597df59954d1ba609c
https://doi.org/10.1016/j.tsf.2007.06.161
https://doi.org/10.1016/j.tsf.2007.06.161
Publikováno v:
Nanotechnology. 16:2913-2918
The technique of transferring Au nanowire onto HSQ by using nanoimprinting was studied. The Au nanowires were fabricated by immersion plating and investigated by SEM, AFM, and TEM analysis. The concentration of HF in the electroplating solution affec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7c34f2f6219f0d736f3a82f525ad9607
https://doi.org/10.1088/0957-4484/16/12/031
https://doi.org/10.1088/0957-4484/16/12/031
Autor:
Chung-Hsien Chen, Fon-Shan Huang
Publikováno v:
Thin Solid Films. 441:248-254
The physical properties and thermal stability of surface modified methylsilsesquioxane (MSQ) were studied. Various post-treatments, such as thermal oxygen, thermal N 2 O and oxygen plasma, were adopted on the cured MSQ film as the surface-modificatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dededf56acc7d7c2ce35a887bdb0f046
https://doi.org/10.1016/s0040-6090(03)00951-9
https://doi.org/10.1016/s0040-6090(03)00951-9