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Publikováno v:
Journal of Crystal Growth. 223:456-460
Quaternary GaInAsSb epilayer was grown by MOCVD on GaSb substrate, and the crystalline state and mismatch relaxation are studied by scanning transmission electron microscopy (STEM), bright field images and convergent beam electron diffraction (CBED)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::247fb8f1cf2e92c4a35083d83e8a5026
https://doi.org/10.1016/s0022-0248(01)00616-9
https://doi.org/10.1016/s0022-0248(01)00616-9
