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pro vyhledávání: '"Fogarty, Michael A."'
Autor:
Chittock-Wood, Jacob F., Leon, Ross C. C., Fogarty, Michael A., Murphy, Tara, Patomäki, Sofia M., Oakes, Giovanni A., von Horstig, Felix-Ekkehard, Johnson, Nathan, Jussot, Julien, Kubicek, Stefan, Govoreanu, Bogdan, Wise, David F., Gonzalez-Zalba, M. Fernando, Morton, John J. L.
Leveraging the advanced manufacturing capabilities of the semiconductor industry promises to help scale up silicon-based quantum processors by increasing yield, uniformity and integration. Recent studies of quantum dots fabricated on 300 mm wafer met
Externí odkaz:
http://arxiv.org/abs/2408.01241
It is well understood that a two-dimensional grid of locally-interacting qubits is a promising platform for achieving fault tolerant quantum computing. However in the near-future, it may prove less challenging to develop lower dimensional structures.
Externí odkaz:
http://arxiv.org/abs/2402.12599
Autor:
Fogarty, Michael A.
A scalable quantum information processing architecture based on silicon metal-oxide-semiconductor technology is presented, combining quantum hardware elements from planar and 3D silicon-on-insulator technologies. This architecture is expressed in the
Externí odkaz:
http://arxiv.org/abs/2208.09172
Autor:
Duan, Jingyu, Lehtinen, Janne S., Fogarty, Michael A., Schaal, Simon, Lam, Michelle, Ronzani, Alberto, Shchepetov, Andrey, Koppinen, Panu, Prunnila, Mika, Gonzalez-Zalba, Fernando, Morton, John J. L.
We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon
Externí odkaz:
http://arxiv.org/abs/2009.13944
Autor:
Duan, Jingyu, Fogarty, Michael A., Williams, James, Hutin, Louis, Vinet, Maud, Morton, John J. L.
We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire n
Externí odkaz:
http://arxiv.org/abs/2005.14712
Akademický článek
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Autor:
Cai, Zhenyu, Fogarty, Michael A., Schaal, Simon, Patomaki, Sofia, Benjamin, Simon C., Morton, John J. L.
Publikováno v:
Quantum 3, 212 (2019)
Spin qubits in silicon quantum dots are one of the most promising building blocks for large scale quantum computers thanks to their high qubit density and compatibility with the existing semiconductor technologies. High fidelity single-qubit gates ex
Externí odkaz:
http://arxiv.org/abs/1904.10378
Autor:
Tanttu, Tuomo, Hensen, Bas, Chan, Kok Wai, Yang, Henry, Huang, Wister, Fogarty, Michael, Hudson, Fay, Itoh, Kohei, Culcer, Dimitrie, Laucht, Arne, Morello, Andrea, Dzurak, Andrew
Publikováno v:
Phys. Rev. X 9, 021028 (2019)
Silicon quantum dots are considered an excellent platform for spin qubits, partly due to their weak spin-orbit interaction. However, the sharp interfaces in the heterostructures induce a small but significant spin-orbit interaction which degrade the
Externí odkaz:
http://arxiv.org/abs/1807.10415
Publikováno v:
In Business Horizons July-August 2022 65(4):481-492
Autor:
Aaronson, Daniel, Brave, Scott A., Butters, R. Andrew, Fogarty, Michael, Sacks, Daniel W., Seo, Boyoung
Publikováno v:
In International Journal of Forecasting April-June 2022 38(2):567-581