Ion microscopy based on laser-cooled cesium atoms

Autor: Pierre Pillet, G. Khalili, Andrea Fioretti, Maria Allegrini, P. Sudraud, M. Reveillard, B. Rasser, Daniel Comparat, I. Guerri, Matthieu Viteau, Yoann Bruneau, L. Kime, Donatella Ciampini, Francesco Fuso

Publikováno v: Ultramicroscopy (Amst.) 164 (2016): 70–77. doi:10.1016/j.ultramic.2015.12.007
info:cnr-pdr/source/autori:Viteau, M.; Reveillard, M.; Kime, L.; Rasser, B.; Sudraud, P.; Bruneau, Y.; Khalili, G.; Pillet, P.; Comparat, D.; Guerri, I.; Fioretti, A.; Ciampini, D.; Allegrini, M.; Fuso, F./titolo:Ion microscopy based on laser-cooled cesium atoms/doi:10.1016%2Fj.ultramic.2015.12.007/rivista:Ultramicroscopy (Amst.)/anno:2016/pagina_da:70/pagina_a:77/intervallo_pagine:70–77/volume:164

We demonstrate a prototype of a Focused Ion Beam machine based on the ionization of a laser-cooled cesium beam adapted for imaging and modifying different surfaces in the few-tens nanometer range. Efficient atomic ionization is obtained by laser prom

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5d1efe0f25f9811132e80b9db7745a1c
http://hdl.handle.net/11568/782814

FIB and DRIE combination for nanotip fabrication.

Autor: Villanueva, G., Plaza, J.A., Sanchez-Amores, A., Bausells, J., Martinez, E., Samitier, J., Errachid, A.

Publikováno v: Conference on Electron Devices, 2005 Spanish; 2005, p443-446, 4p

Si MOSFET fabrication using focused ion beams

Autor: P.L. Middleton, R.A. Jullens, R.L. Kubena, E.H. Stevens, R.G. Brault, Joseph Ya-min Lee

Publikováno v: 1983 International Electron Devices Meeting.

Si MOSFET fabrication using focused ion beamsR.L. Kubena, J.Y. Lee, R.A. Juliens, R.G. Brault,P.L. Middleton, and E.H. StevensHughes Research Laboratories, Malibu, California 90265AbstractSubmicrometer focused ion beams have been used both for the ma

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a03cd0e8a246bc905dd57be9ba1b4008
https://doi.org/10.1109/iedm.1983.190569