Zobrazeno 1 - 10
of 263
pro vyhledávání: '"Flyura Djurabekova"'
Publikováno v:
npj Computational Materials, Vol 9, Iss 1, Pp 1-10 (2023)
Abstract Ga2O3 is a wide-band gap semiconductor of emergent importance for applications in electronics and optoelectronics. However, vital information of the properties of complex coexisting Ga2O3 polymorphs and low-symmetry disordered structures is
Externí odkaz:
https://doaj.org/article/7a6391922b4a4c8e915ef863a6264cb4
Autor:
Alexander Azarov, Javier García Fernández, Junlei Zhao, Flyura Djurabekova, Huan He, Ru He, Øystein Prytz, Lasse Vines, Umutcan Bektas, Paul Chekhonin, Nico Klingner, Gregor Hlawacek, Andrej Kuznetsov
Publikováno v:
Nature Communications, Vol 14, Iss 1, Pp 1-8 (2023)
Abstract Radiation tolerance is determined as the ability of crystalline materials to withstand the accumulation of the radiation induced disorder. Nevertheless, for sufficiently high fluences, in all by far known semiconductors it ends up with eithe
Externí odkaz:
https://doaj.org/article/52702cecbf87439db6e4bf134f8f58db
Autor:
Anna Liski, Tomi Vuoriheimo, Jesper Byggmästar, Kenichiro Mizohata, Kalle Heinola, Tommy Ahlgren, Ko-Kai Tseng, Ting-En Shen, Che-Wei Tsai, Jien-Wei Yeh, Kai Nordlund, Flyura Djurabekova, Filip Tuomisto
Publikováno v:
Materials, Vol 17, Iss 11, p 2574 (2024)
The WMoTaNbV alloy has shown promise for applications as a solid state hydrogen storage material. It absorbs significant quantities of H directly from the atmosphere, trapping it with high energy. In this work, the dynamics of the absorption of hydro
Externí odkaz:
https://doaj.org/article/c8f994b1a6b24c9084fa2403e575dae8
Publikováno v:
Scientific Reports, Vol 13, Iss 1, Pp 1-13 (2023)
Abstract Shape modification of embedded nanoparticles can be achieved by means of swift heavy ion irradiation. During irradiation, the particles elongate and align with the direction of the ion beam, presumably due to nanometer-scale phase transition
Externí odkaz:
https://doaj.org/article/4c043f674bc746d2b5680d7c993ba30d
Publikováno v:
AIP Advances, Vol 12, Iss 11, Pp 115317-115317-9 (2022)
Understanding the underlying physics of vacuum electrical breakdown is of relevance for the development of technologies where breakdown is of significance, either as an intended part of device operation or as a cause of failure. One prominent contemp
Externí odkaz:
https://doaj.org/article/c975a644fcf54914939b9704293fe8c7
Autor:
Miguel C. Sequeira, Jean-Gabriel Mattei, Henrique Vazquez, Flyura Djurabekova, Kai Nordlund, Isabelle Monnet, Pablo Mota-Santiago, Patrick Kluth, Clara Grygiel, Shuo Zhang, Eduardo Alves, Katharina Lorenz
Publikováno v:
Communications Physics, Vol 4, Iss 1, Pp 1-8 (2021)
Gallium nitride is a wide bandgap semiconductor which is generally expected to replace some silicon-based technologies, despite some of its properties still requiring further investigation. Here, using a two-temperature model coupled to molecular dyn
Externí odkaz:
https://doaj.org/article/d2128366a2e14a899c290711efdc2058
Autor:
Marta Haro, Pawan Kumar, Junlei Zhao, Panagiotis Koutsogiannis, Alexander James Porkovich, Zakaria Ziadi, Theodoros Bouloumis, Vidyadhar Singh, Emilio J. Juarez-Perez, Evropi Toulkeridou, Kai Nordlund, Flyura Djurabekova, Mukhles Sowwan, Panagiotis Grammatikopoulos
Publikováno v:
Communications Materials, Vol 2, Iss 1, Pp 1-10 (2021)
Lithiation of anodes during cycling of lithium-ion batteries generates stresses that reduce operation lifetime. Here, a composite silicon-based anode with a nanoscale vaulted architecture shows high mechanical stability and electrochemical performanc
Externí odkaz:
https://doaj.org/article/c177b26738e74667a0ce90be3d8d7dfd
Density functional theory calculation of the properties of carbon vacancy defects in silicon carbide
Autor:
Xiuhong Wang, Junlei Zhao, Zongwei Xu, Flyura Djurabekova, Mathias Rommel, Ying Song, Fengzhou Fang
Publikováno v:
Nanotechnology and Precision Engineering, Vol 3, Iss 4, Pp 211-217 (2020)
As a promising material for quantum technology, silicon carbide (SiC) has attracted great interest in materials science. Carbon vacancy is a dominant defect in 4H-SiC. Thus, understanding the properties of this defect is critical to its application,
Externí odkaz:
https://doaj.org/article/5cb81999a23743cf8146eea7020070af
Autor:
Jyri Kimari, Ville Jansson, Simon Vigonski, Ekaterina Baibuz, Roberto Domingos, Vahur Zadin, Flyura Djurabekova
Publikováno v:
Data in Brief, Vol 32, Iss , Pp 106094- (2020)
Kinetic Monte Carlo (KMC) is an efficient method for studying diffusion. A limiting factor to the accuracy of KMC is the number of different migration events allowed in the simulation. Each event requires its own migration energy barrier. The calcula
Externí odkaz:
https://doaj.org/article/8eb247bd0f604d17815a0574e8f2b438
Autor:
Ekaterina Baibuz, Simon Vigonski, Jyri Lahtinen, Junlei Zhao, Ville Jansson, Vahur Zadin, Flyura Djurabekova
Publikováno v:
Data in Brief, Vol 19, Iss , Pp 564-569 (2018)
Atomistic rigid lattice Kinetic Monte Carlo (KMC) is an efficient method for simulating nano-objects and surfaces at timescales much longer than those accessible by molecular dynamics. A laborious and non-trivial part of constructing any KMC model is
Externí odkaz:
https://doaj.org/article/c981540042af4ef1973d112670483f1f