Zobrazeno 1 - 7
of 7
pro vyhledávání: '"Fluckiger, Ph"'
Autor:
Fritschi, R., Frederico, S., Hilbert, C., Fluckiger, Ph, Renaud, Ph, Tsamados, D., Boussey-Said, J., Chovet, A., Ng, R.K.M, Udrea, F., Curty, J.P, Dehollanin, C., Declercq, M., Ionescu, A.M.
Publikováno v:
Microelectronic Engineering
Microelectronic Engineering, Elsevier, 2004, vol.n°73-74, pp 447-45
Microelectronic Engineering, 2004, vol.n°73-74, pp 447-45
Microelectronic Engineering, Elsevier, 2004, vol.n°73-74, pp 447-45
Microelectronic Engineering, 2004, vol.n°73-74, pp 447-45
This paper reports the fabrication and electrical characterization of high tuning range AlSi RF MEMS capacitors. We present experimental results obtained by a surface micromachining process that uses dry etching of sacrificial amorphous silicon to re
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::65eef2e0271b2f2985fb9bf40c24dbd7
https://hal.archives-ouvertes.fr/hal-00387245
https://hal.archives-ouvertes.fr/hal-00387245
Autor:
Fritschi, R., Curty, J.P, Hibert, C., Fluckiger, Ph, Dehollain, C., Declercq, M.J, Ng, R.K.M, Udrea, F., Tsamados, D., Boussey-Said, J., Chovet, A., Ionescu, A.M.
Publikováno v:
MEMSWAVE, IST RF-MEMS Cluster meeting
MEMSWAVE, IST RF-MEMS Cluster meeting, 2003, toulouse, France
MEMSWAVE, IST RF-MEMS Cluster meeting, 2003, toulouse, France
National audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::6fed092f28db5271d3f8b8b94cd7b9c4
https://hal.archives-ouvertes.fr/hal-00387281
https://hal.archives-ouvertes.fr/hal-00387281
NOVELTY - A micro-electro-mechanical-system (MEMS) is manufactured by the use of a sacrificial layer that is made of silicon. USE - The invention is used in surface micromachining for the manufacture of a MEMS containing a suspended metal layer or ME
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::c3bfb7972e38cf3b309a8ff3cd733009
https://infoscience.epfl.ch/record/90833
https://infoscience.epfl.ch/record/90833
Autor:
Pott, V., Ionescu, A. M., Fritschi, R., Hibert, C., Fluckiger, Ph, Racine, G. A., Declercq, M., Renaud, Ph, Rusu, A., Lidia Dobrescu, Dobrescu, L.
Publikováno v:
Scopus-Elsevier
ResearcherID
ResearcherID
This paper reports on the modeling and key design aspects of an innovative MEMS device: the suspended-gate MOSFET (SG-MOSFET). Based on the coupled-electromechanical equations describing the suspended gate actuation, we present the investigation of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::88ecd155acc9af4d535d0d35f5c43d04
http://www.scopus.com/inward/record.url?eid=2-s2.0-0035744244&partnerID=MN8TOARS
http://www.scopus.com/inward/record.url?eid=2-s2.0-0035744244&partnerID=MN8TOARS
The flexibility of the new available Inductively Coupled Plasma (ICP) reactors provides a lot of possibilities for process development in dry etching field. Deep anisotropic etching of silicon is now possible under control (etch rate, profiles, unifo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______185::ddbb0c3e497f8ed13534d431928b52fc
https://infoscience.epfl.ch/record/58475
https://infoscience.epfl.ch/record/58475
Autor:
Dainesi, P., Thevenaz, L., Fluckiger, Ph., Hibert, C., Racine, G., Robert, Ph., Renaud, Ph., Ionescu, A.M., Declercq, M.
Publikováno v:
2001 IEEE International SOI Conference. Proceedings (Cat. No.01CH37207); 2001, p137-138, 2p
Conference
Tento výsledek nelze pro nepřihlášené uživatele zobrazit.
K zobrazení výsledku je třeba se přihlásit.
K zobrazení výsledku je třeba se přihlásit.