Zobrazeno 1 - 10
of 22
pro vyhledávání: '"Florine Conchon"'
Autor:
Pierre-Olivier Renault, Christopher Krauss, Eric Le Bourhis, Sergey Grachev, Etienne Barthel, Guillaume Geandier, Alessandro Benedetto, Florine Conchon, Philippe Goudeau
Publikováno v:
Materials Science Forum. 681:127-132
Residual stress relaxation in sputtered ZnO films has been studied in-situ by synchrotron x-ray diffraction. The films deposited on (001) Si substrates were thermally treated from 25°C to 700°C. X-ray diffraction 2D patterns were captured continuou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::02c72232a680e2aa672cab8bba7973ef
https://doi.org/10.4028/www.scientific.net/msf.681.127
https://doi.org/10.4028/www.scientific.net/msf.681.127
Publikováno v:
Journal of Applied Crystallography
Journal of Applied Crystallography, International Union of Crystallography, 2009, 42 (1), pp.85-92. ⟨10.1107/S0021889808036406⟩
Journal of Applied Crystallography, International Union of Crystallography, 2009, 42, pp.85-92. ⟨10.1107/S0021889808036406⟩
Journal of Applied Crystallography, International Union of Crystallography, 2009, 42 (1), pp.85-92. ⟨10.1107/S0021889808036406⟩
Journal of Applied Crystallography, International Union of Crystallography, 2009, 42, pp.85-92. ⟨10.1107/S0021889808036406⟩
A simple least-squares fitting-based method is described for the determination of strain profiles in epitaxial films using high-resolution X-ray diffraction. The method is model-independent,i.e.it does not require any `guess' model for the shape of t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c34cf51c4e6df9a16020480a640a3c76
https://doi.org/10.1107/s0021889808036406
https://doi.org/10.1107/s0021889808036406
Autor:
Jean-Louis Hodeau, Cécile Girardot, Eric Dooryhee, Jens Kreisel, François Weiss, Florine Conchon, René Guinebretière, S. Pignard, Alexandre Boulle
Publikováno v:
Materials Science and Engineering: B
Materials Science and Engineering: B, Elsevier, 2007, 144, pp.32-37. ⟨10.1016/j.mseb.2007.07.096⟩
Materials Science and Engineering: B, Elsevier, 2007, 144, pp.32-37. ⟨10.1016/j.mseb.2007.07.096⟩
The structural stabilization of SmNiO3 (SNO) films epitaxially grown by an injection MO-CVD process on (0 0 1) SrTiO3 (STO) substrates is investigated. Using high-resolution X-ray diffraction (XRD), we show that SNO can be stabilized on STO with a mi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a5b66f0f4e5956c229c45ef1ba8afffe
https://doi.org/10.1016/j.mseb.2007.07.096
https://doi.org/10.1016/j.mseb.2007.07.096
Autor:
A. Dauger, Florine Conchon, Alexandre Boulle, René Guinebretière, Olivier Masson, Romain Bachelet
Publikováno v:
Applied Surface Science
Applied Surface Science, Elsevier, 2006, 253, pp.95-105. ⟨10.1016/j.apsusc.2006.05.086⟩
Applied Surface Science, Elsevier, 2006, 253, pp.95-105. ⟨10.1016/j.apsusc.2006.05.086⟩
The investigation of nanostructured oxide thin films using high-resolution X-ray diffraction (XRD) is considered. Because of the small amount of matter deposited and significant defect densities, such oxide thin film structures can be considered as i
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1252e825b0a9cab9b3c0763da04aa41e
https://doi.org/10.1016/j.apsusc.2006.05.086
https://doi.org/10.1016/j.apsusc.2006.05.086
Publikováno v:
Modern diffraction Methods
E.J. MITTEMEIJER, U. WELZEL. Modern diffraction Methods, Wiley, pp.259-281, 2012, 978-3-527-32279-4. ⟨10.1002/9783527649884.ch9⟩
Modern Diffraction Methods
E.J. MITTEMEIJER, U. WELZEL. Modern diffraction Methods, Wiley, pp.259-281, 2012, 978-3-527-32279-4. ⟨10.1002/9783527649884.ch9⟩
Modern Diffraction Methods
554 pages; International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f67c0bcb0a4a3686f1830ce82db33f9b
https://hal.archives-ouvertes.fr/hal-00794350
https://hal.archives-ouvertes.fr/hal-00794350
Autor:
Pierre-Olivier Renault, Jacques Jupille, S. Yu. Grachev, C. Krauss, Veronique Rondeau, E. Le Bourhis, P. Goudeau, Etienne Barthel, Nathalie Brun, Elin Sondergard, Rémi Lazzari, Florine Conchon, Rene Gy
Publikováno v:
Thin Solid Films
Thin Solid Films, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
Thin Solid Films, Elsevier, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
Thin Solid Films, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
Thin Solid Films, Elsevier, 2010, 519 (5), pp.1563-1567. ⟨10.1016/j.tsf.2010.07.013⟩
article i nfo Article history: X-ray diffraction stress analyses have been performed on two different thin films deposited onto silicon substrate: ZnO and ZnO encapsulated into Si3N4 layers. We showed that both as-deposited ZnO films are in a high co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ec85289b5fabfa7a2c4b5ccb22c906ef
https://hal.science/hal-01442906
https://hal.science/hal-01442906
Autor:
Carole Balloud, Ariadne Andreadou, Didier Chaussende, Florine Conchon, Jean Camassel, Alexandre Boulle, Michel Pons, Sandrine Juillaguet, Maher Soueidan, Alkioni Mantzari, Frédéric Mercier, Efsthatios Polychroniadis, Gabriel Ferro
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
Journal of Crystal Growth, Elsevier, 2008, 310, pp.976-981. ⟨10.1016/j.jcrysgro.2007.11.140⟩
International audience; Despite outstanding properties, the development of 3C-SiC electronics continues to suffer from the lack of good quality, bulk 3C-SiC substrates. Up to now, there is no real seed and/or optimized growth processes. In this work,
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9902269c47428cd9b6e0d28c5cbd048e
https://hal.archives-ouvertes.fr/hal-00174181/file/Article_-_EMRS2007_-_chaussende_-_symp_G_-_revised_2.pdf
https://hal.archives-ouvertes.fr/hal-00174181/file/Article_-_EMRS2007_-_chaussende_-_symp_G_-_revised_2.pdf
Autor:
Florine Conchon, Jens Kreisel, Jean-Louis Hodeau, S. Pignard, Eric Dooryhee, Alexandre Boulle, C. Girardot, René Guinebretière, François Weiss
Publikováno v:
Journal of Physics: Condensed Matter
Journal of Physics: Condensed Matter, IOP Publishing, 2008, 20, pp.145216-1-145216-7. ⟨10.1088/0953-8984/20/14/145216⟩
Journal of Physics: Condensed Matter, IOP Publishing, 2008, 20, pp.145216-1-145216-7. ⟨10.1088/0953-8984/20/14/145216⟩
International audience; The present work is devoted to explaining the role of epitaxial strain in the structure and the metal–insulator (MI) transition in SmNiO3 (SNO) films deposited on LaAlO3 (LAO) and SrTiO3 (STO) substrates. X-ray reciprocal sp
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::93c4e9029143d756d99bf5e699fef758
https://hal.archives-ouvertes.fr/hal-00266274
https://hal.archives-ouvertes.fr/hal-00266274
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, Elsevier, 2008, 310, pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
Journal of Crystal Growth, Elsevier, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
Journal of Crystal Growth, Elsevier, 2008, 310, pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
Journal of Crystal Growth, Elsevier, 2008, 310 (5), pp.982-987. ⟨10.1016/j.jcrysgro.2007.11.149⟩
International audience; A novel non-destructive method to characterize stacking faults (SFs) in 3C-SiC crystals is presented. This method is based on fast X-ray diffraction reciprocal space mapping and can be used qualitatively for routine analysis o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::82d78ac4decd7795a228429633f16249
https://hal.archives-ouvertes.fr/hal-00291594
https://hal.archives-ouvertes.fr/hal-00291594
Autor:
S. Pignard, Florine Conchon, Jens Kreisel, Alexandre Boulle, François Weiss, René Guinebretière, Jean-Louis Hodeau, Cécile Girardot, Jean-François Berar, Eric Dooryhee
Publikováno v:
Journal of Physics D: Applied Physics
Journal of Physics D: Applied Physics, IOP Publishing, 2007, 40, pp.4872-4876. ⟨10.1088/0022-3727/40/16/017⟩
Journal of Physics D: Applied Physics, IOP Publishing, 2007, 40, pp.4872-4876. ⟨10.1088/0022-3727/40/16/017⟩
The epitaxial stabilization of SmNiO3 (SNO) films grown by an injection MO-CVD process on (0 0 1) SrTiO3 (STO) substrates is discussed. By means of high-resolution x-ray diffraction, we show for the first time that SNO can be stabilized on STO with a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a9173fca7e9852953cadb63ffd33bed0
https://hal.archives-ouvertes.fr/hal-00188452
https://hal.archives-ouvertes.fr/hal-00188452