Zobrazeno 1 - 10
of 10
pro vyhledávání: '"Florin Cerbu"'
Autor:
Andre Stesmans, Florin Cerbu, Michel Houssa, Judit Lisoni, Valeri Afanas'ev, D. Andreev, Laurent Breuil
Publikováno v:
physica status solidi (a). 213:265-269
Scaling the planar NAND flash cells to the 20 nm node and beyond mandates introduction of inter-gate insulators with high dielectric constant (κ). However, because these insulators provide a smaller electron barrier at the interface with the poly-Si
Autor:
Kaushik A. Kumar, Carlos Fonseca, Ton Kiers, Florin Cerbu, Christophe Beral, Guillaume Schelcher, Liesbeth Reijnen, Marc Demand, Mark John Maslow, Tae Kwon Jee, Vadim Timoshkov
Publikováno v:
Optical Microlithography XXXI.
Spacer-assisted pitch multiplication is a patterning technique that is used on many different critical layers for memory and logic devices. Pitch walk can occur when the spacer process, a combination of lithography, deposition and etch processes, pro
Autor:
Hsing-Yi Chou, Antony Premkumar Peter, Andre Stesmans, Florin Cerbu, Iuliana Radu, Koen Martens, Valeri Afanas'ev
Publikováno v:
physica status solidi c. 12:238-241
The effective work function (EWF) and the energy position of the valence band in 20-40-nm thick VO2and V2O5layers grown by atomic layer deposition (ALD) on top of insulating SiO2 and γ-Al2O3 films were evaluated using the comparison between capacita
Publikováno v:
physica status solidi (b). 251:2193-2196
In this work we analyse the influence of the O-scavenging process on interface traps in (100)Si/SiOx/HfO2(1.8 nm)/TiNx/Si stacks by using electrical measurements and electron spin resonance spectroscopy. The reduction of interfacial SiOx by high-temp
Autor:
Florin Cerbu, Oreste Madia, Wan Chih Wang, Andre Stesmans, Valery V. Afanas'ev, Michel Houssa
Publikováno v:
ECS Transactions. 64:17-22
The work describes the physical principles of the exhaustive photodepopulation spectroscopy. This method allows one to determine the energy distribution of gap states in insulating materials using the observation of optically-assisted electron remova
Autor:
Hans Reisinger, Maria Toledano-Luque, Oreste Madia, Andre Stesmans, A. P. D. Nguyen, B. Kaczer, Jacopo Franco, Florin Cerbu, K. Rott, Pieter Weckx, Wolfgang Goes, Tibor Grasser, Valery V. Afanas'ev
Publikováno v:
2013 International Conference on Simulation of Semiconductor Processes and Devices (SISPAD).
Selected physical and electrical characterization of gate-oxide defects is reviewed. Interfacial dangling bond defects at interfaces of Si and SiGe are characterized electrically and compared to the electron spin resonance data. It is found that addi
Autor:
Sivan Fadida, Oreste Madia, Jack Strand, D. Andreev, Laurent Breuil, Judit Lisoni, Moshe Eizenberg, Michel Houssa, Valery V. Afanas'ev, Florin Cerbu, Alexander L. Shluger, Kittl Jorge A, Andre Stesmans
Publikováno v:
Applied Physics Letters. 108:222901
Analysis of photodepopulation of electron traps in HfO2 films grown by atomic layer deposition is shown to provide the trap energy distribution across the entire oxide bandgap. The presence is revealed of two kinds of deep electron traps energeticall
Publikováno v:
ECS Meeting Abstracts. :2085-2085
Degradation phenomena in metal-insulator-semiconductor devices are often associated with unwanted charging of the insulating layers, prompting efforts to understand the nature of the charge traps. While a large number of theoretical studies regarding
Autor:
Maslow, Mark John, Timoshkov, Vadim, Kiers, Ton, Tae Kwon Jee, Reijnen, Liesbeth, Kumar, Kaushik, Demand, Marc, Fonseca, Carlos, Cerbu, Florin, Schelcher, Guillaume, Beral, Christophe
Publikováno v:
Proceedings of SPIE; 1/15/2018, Vol. 10587, p1-14, 14p
Autor:
Cerbu, F., Chou, H.-S., Radu, I. P., Martens, K., Peter, A. P., Afanas'ev, V. V., Stesmans, A.
Publikováno v:
Physica Status Solidi (C); Jan2015, Vol. 12 Issue 1/2, p238-241, 4p