Zobrazeno 1 - 3
of 3
pro vyhledávání: '"Florian Zaunert"'
Publikováno v:
Journal of Telecommunications and Information Technology, Iss 2 (2023)
The evaluation of the world’s first MOSFETs with epitaxially-grown rare-earth high-k gate dielectrics is the main issue of this work. Electrical device characterization has been performed on MOSFETs with high-k gate oxides as well as their referenc
Externí odkaz:
https://doaj.org/article/6692ced7642140c19136d5dfd622e1e7
Publikováno v:
Microelectronic Engineering. 85:15-19
This paper presents the first successful attempt to integrate crystalline high-k gate dielectrics into a virtually damage-free damascene metal gate process. Process details as well as initial electrical characterization results on fully functional ga
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::85dcbe574f2a73799a5395d5fd361e63
https://doi.org/10.1016/j.mee.2007.03.008
https://doi.org/10.1016/j.mee.2007.03.008
Autor:
Rama Komaragiri, Tino Ruland, Heinrich Kurz, Klaus Haberle, Udo Schwalke, Florian Zaunert, H. D. B. Gottlob, Max C. Lemme, Johnson Kwame Efavi, Thorsten Wahlbrink, Yordan Stefanov, T. Mollenhauer
Publikováno v:
BASE-Bielefeld Academic Search Engine
In this work we report on methods to introduce crystalline rare-earth (RE) oxides with high (k > 3.9) dielectric constants (high-k) in a CMOS process flow. Key process steps compatible with crystalline praseodymium oxide (Pr2O3) high-k gate dielectri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::449fb9fa20678fd7849335bc95579619
https://doi.org/10.1016/j.jnoncrysol.2005.04.032
https://doi.org/10.1016/j.jnoncrysol.2005.04.032