Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Florian Rothmayr"'
Autor:
Nicolas Schäfer, Robert Weih, Julian Scheuermann, Florian Rothmayr, Johannes Koeth, Sven Höfling
Publikováno v:
Sensors, Vol 24, Iss 12, p 3843 (2024)
We demonstrate substrate-emitting resonant cavity interband cascade light emitting diodes (RCICLEDs) based on a single distributed Bragg reflector (DBR). These devices operate in continuous wave mode at room temperature. Compared to standard ICLEDs w
Externí odkaz:
https://doaj.org/article/c031ca6137fb483bbb75aacf33d7079f
Autor:
Edgar David Guarin Castro, Florian Rothmayr, Sebastian Krüger, Georg Knebl, Anne Schade, Johannes Koeth, Lukas Worschech, Victor Lopez-Richard, Gilmar Eugenio Marques, Fabian Hartmann, Andreas Pfenning, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Externí odkaz:
https://doaj.org/article/edc94ef927c94e3f91132e7985e04a29
Autor:
Florian Rothmayr, Edgar David Guarin Castro, Fabian Hartmann, Georg Knebl, Anne Schade, Sven Höfling, Johannes Koeth, Andreas Pfenning, Lukas Worschech, Victor Lopez-Richard
Publikováno v:
Nanomaterials, Vol 12, Iss 6, p 1024 (2022)
Resonant tunneling diode photodetectors appear to be promising architectures with a simple design for mid-infrared sensing operations at room temperature. We fabricated resonant tunneling devices with GaInAsSb absorbers that allow operation in the 2
Externí odkaz:
https://doaj.org/article/aff09d8ca22542acb8831af49bfd3600
Autor:
Andreas Bader, Fabian Hartmann, Andreas Pfenning, Florian Rothmayr, Nabeel Khan, Johannes Köth, Sven Höfling
Publikováno v:
Infrared Remote Sensing and Instrumentation XXX.
Autor:
Luca Steinbrecher, Florian Rothmayr, Andreas Pfenning, Andreas Bader, Yaksh Rawal, Fabian Hartmann, Sven Höfling
Publikováno v:
Infrared Remote Sensing and Instrumentation XXIX.
We present recent work on III-V semiconductor mid-infrared light emitters and detectors. The employed type-II broken bandgap alignment between InAs and GaxIn1-xSb allows for widely tunable emission and absorption wavelengths with energies below the i
Autor:
Johannes Koeth, Andreas Pfenning, Anne Schade, Victor Lopez-Richard, Fabian Hartmann, Edgar David Guarin Castro, Georg Knebl, Florian Rothmayr, Gilmar E. Marques, Sebastian Krüger, Lukas Worschech, Sven Höfling
Publikováno v:
AIP Advances, Vol 10, Iss 5, Pp 055024-055024-6 (2020)
We have studied the optical and electronic transport properties of n-type AlSb/GaInAsSb double barrier quantum well resonant tunneling diodes (RTDs). The RTDs were grown by molecular beam epitaxy on GaSb substrates. Collector, quantum well, and emitt
Autor:
Sven Höfling, Andreas Pfenning, Fabian Hartmann, Robert Weih, Lukas Worschech, C. Kistner, Martin Kamp, Anne Schade, Manuel Meyer, Johannes Koeth, Andreas Bader, Florian Rothmayr, Georg Knebl, Sebastian Krüger
Publikováno v:
Infrared Remote Sensing and Instrumentation XXVI.
Molecule and gas sensing is a key technology that is applied in multiple environmental, industrial and medical fields. In particular optical detection technologies enable contactless, nondestructive, highly sensitive and fast detection of even smalle
Autor:
L. Worschech, Florian Rothmayr, Georg Knebl, S. Krueger, Andreas Pfenning, Anne Schade, C. Kistner, J. Koeth, Sven Höfling, Fabian Hartmann
The authors are grateful for financial support by the BMBF via the national project HIRT (FKZ:13XP5003A). We present resonant tunneling diode-photodetectors (RTD-PDs) with GaAs0.15Sb0.85/AlAs0.1Sb0.9 double barrier structures combined with an additio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e374dc6f13220e2985ba4fc1a6515ad9
https://hdl.handle.net/10023/13279
https://hdl.handle.net/10023/13279
Autor:
Andreas Pfenning, L. Worschech, Anne Schade, J. Koeth, S. Krueger, Georg Knebl, C. Kistner, Florian Rothmayr, Fabian Hartmann, Sven Höfling
Publikováno v:
CLEO Pacific Rim Conference.
We fabricated resonant tunneling diode photodetectors with a GaInAsSb absorption layer and a GaAsSb/AlAsSb double barrier. The detector cut-off wavelength is $3.5\ {\mu \text{m}}$ and reaches a peak sensitivity of 0.85 A/W at 2004 nm.