Etch mechanism of an Al2O3 hard mask in the Bosch process

Autor: Martin Drost, Steffen Marschmeyer, Mirko Fraschke, Oksana Fursenko, Florian Bärwolf, Ioan Costina, Mamathamba Kalishettyhalli Mahadevaiah, Marco Lisker

Publikováno v: Micro and Nano Engineering, Vol 14, Iss , Pp 100102- (2022)

The etching of high aspect ratio structures in silicon via the Bosch process is essential in modern technologies such as microelectromechanical systems (MEMS) and through‑silicon vias (TSV) fabrication. The process can be very demanding on the mask

Externí odkaz: https://doaj.org/article/e7fa8a2a3c594386b2eef12583826da8

Fabrication of Highly n-Type-Doped Germanium Nanowires and Ohmic Contacts Using Ion Implantation and Flash Lamp Annealing

Autor: Ahmad Echresh, Slawomir Prucnal, Zichao Li, René Hübner, Fabian Ganss, Oliver Steuer, Florian Bärwolf, Shima Jazavandi Ghamsari, Manfred Helm, Shengqiang Zhou, Artur Erbe, Lars Rebohle, Yordan M. Georgiev

Publikováno v: ACS Applied Electronic Materials 4(2022), 5256-5266
Publication date: 2022-08-03 Restricted accessDOI: 10.14278/rodare.1823Versions: 10.14278/rodare.1824

Accurate control of doping and fabrication of metal contacts on n-type germanium nanowires (GeNWs) with low resistance and linear characteristics remain a major challenge in germanium-based nanoelectronics. Here, we present a combined approach to fab

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7df3a4ea4d853058b90480caad2571e6
https://doi.org/10.1021/acsaelm.2c00952

Toward controlling the Al2O3/ZnO interface properties by in situ ALD preparation

Autor: Christoph Janowitz, Ali Mahmoodinezhad, Małgorzata Kot, Carlos Morales, Franziska Naumann, Paul Plate, Marvin Hartwig Zoellner, Florian Bärwolf, David Stolarek, Christian Wenger, Karsten Henkel, Jan Ingo Flege

Publikováno v: Dalton Transactions. 51:9291-9301

The electronic band alignment of an alumina/zinc oxide thin-film heterostructure solely grown by atomic layer deposition has been determined by XPS/UPS depth profiling, correlating the electronic properties with the interface chemical composition.

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::0a971d680289bafeb73dc37f08574998
https://doi.org/10.1039/d1dt04008a

Operando diagnostic detection of interfacial oxygen ‘breathing’ of resistive random access memory by bulk-sensitive hard X-ray photoelectron spectroscopy

Autor: Peng Huang, Thomas Schroeder, Markus Andreas Schubert, Christian Wenger, Jinfeng Kang, Florian Bärwolf, Stefan Petzold, Andrei Gloskovskii, Lambert Alff, Yudi Zhao, S. U. Sharath, Wei Ren, P. Calka, Zuo-Guang Ye, Karol Fröhlich, Gang Niu, Eduardo Perez

Publikováno v: Materials Research Letters 7(3), 117-123 (2019). doi:10.1080/21663831.2018.1561535
Materials Research Letters, Vol 7, Iss 3, Pp 117-123 (2019)

Materials Research Letters 7(3), 117 - 123 (2019). doi:10.1080/21663831.2018.1561535
The HfO2-based resistive random access memory (RRAM) is one of the most promising candidatesfor non-volatile memory applications. The detection and examination

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f763cd29dee5ad20a8e1bc53ff44d323

Diagnostic of graphene on Ge(100)/Si(100) in a 200 mm wafer Si technology environment by spectroscopic ellipsometry/reflectometry

Autor: Andreas Mai, Florian Bärwolf, Mindaugas Lukosius, Joachim Bauer, Claus Villringer, O. Fursenko, Helge Lux, M. Lisker

Publikováno v: Journal of Vacuum Science & Technology B, 37, 6, Article-Nr. 062927

Comprehensive diagnostics is a prerequisite for the application of graphene in semiconductor technologies. Here, the authors present long-term investigations of graphene on 200-mm Ge(100)/Si(100) wafers under clean room environmental conditions. Diag

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8cb10022864e83b03854d7cc234c47c7
https://doi.org/10.1116/1.5122792