Zobrazeno 1 - 10
of 12
pro vyhledávání: '"Florent Lallemand"'
Autor:
Rosine Coq Germanicus, Peter De Wolf, Florent Lallemand, Catherine Bunel, Serge Bardy, Hugues Murray, Ulrike Lüders
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 1764-1775 (2020)
This work addresses the need for a comprehensive methodology for nanoscale electrical testing dedicated to the analysis of both “front end of line” (FEOL) (doped semiconducting layers) and “back end of line” (BEOL) layers (metallization, tren
Externí odkaz:
https://doaj.org/article/6f3d302891084229942bf424df53a6aa
Autor:
Mohamed Mehdi Jatlaoui, Seiji Hidaka, Ryo Kasai, Sho Kubota, Masato Takesawa, Charles Muller, Florent Lallemand, Shunsuke Abe, Takashi Takeuchi, Hitoshi Matsuno
Publikováno v:
2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).
Publikováno v:
2021 IEEE 23rd Electronics Packaging Technology Conference (EPTC).
Publikováno v:
BIODEVICES
Proceedings of the 14th International Joint Conference on Biomedical Engineering Systems and Technologies-BIODEVICES
14th International Conference on Biomedical Electronics and Devices
14th International Conference on Biomedical Electronics and Devices, Feb 2021, Online Streaming, France. pp.49-57, ⟨10.5220/0010254300490057⟩
Scopus-Elsevier
Proceedings of the 14th International Joint Conference on Biomedical Engineering Systems and Technologies-BIODEVICES
14th International Conference on Biomedical Electronics and Devices
14th International Conference on Biomedical Electronics and Devices, Feb 2021, Online Streaming, France. pp.49-57, ⟨10.5220/0010254300490057⟩
Scopus-Elsevier
International audience; A silicon 3D-array capacitor dedicated for an implantable bradycardia pacemaker is presented. The integrated 3D-shape of the capacitors are designed by fabricating a high ratio micropore array inside the silicon wafer. This sp
Autor:
Florent Lallemand, Niemat Moultif, Hugues Murray, Catherine Bunel, Daniel Chateigner, Rosine Coq Germanicus, Wadia Jouha, Arnaud Fouchet, Olivier Latry, Ulrike Lüders
Publikováno v:
Nano Express
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Nano Express, 2021, 2 (1), pp.010037. ⟨10.1088/2632-959x/abed3e⟩
Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of local cond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f3f2404c51cf9f15ba564e2d8404cc01
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdf
https://hal.science/hal-03341563/file/2021_Nano_Express_2_Coq_Germanicus_010037.pdf
Autor:
Clara Grygiel, G. Rolland, Philippe Descamps, B. Cretu, Catherine Bunel, Francoise Bezerra, R. Coq Germanicus, A. D. Touboul, Florent Lallemand
Publikováno v:
Conference on Radiation Effects on Components and Systems (RADECS)
Conference on Radiation Effects on Components and Systems (RADECS), Sep 2018, Göteborg, Sweden. ⟨10.1109/RADECS45761.2018.9328657⟩
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2018, Göteborg, Sweden. pp.1-4, ⟨10.1109/RADECS45761.2018.9328657⟩
Conference on Radiation Effects on Components and Systems (RADECS), Sep 2018, Göteborg, Sweden. ⟨10.1109/RADECS45761.2018.9328657⟩
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)
2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS), Sep 2018, Göteborg, Sweden. pp.1-4, ⟨10.1109/RADECS45761.2018.9328657⟩
International audience; In this study, we demonstrate the capability to detect microscopic stable displacement nature created by proton irradiations with a method based on the discrimination of the three major low frequency noise sources generally ob
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2d5d558eb8c48f296e56755f74dfaa16
https://hal.archives-ouvertes.fr/hal-02475434
https://hal.archives-ouvertes.fr/hal-02475434
Publikováno v:
E3S Web of Conferences
i-DUST 2016
i-DUST 2016, 2016, Avignon, France. pp.04003, ⟨10.1051/e3sconf/20161204003⟩
E3S Web of Conferences, Vol 12, p 04003 (2016)
i-DUST 2016
i-DUST 2016, 2016, Avignon, France. pp.04003, ⟨10.1051/e3sconf/20161204003⟩
E3S Web of Conferences, Vol 12, p 04003 (2016)
International audience; The morphology of a Nickel layer grown by an Electroless Nickel Immersion Gold (ENIG) technique used for microelectronics interconnections is determined by Atomic Force Microscopy (AFM) investigations. The root mean square (rm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::2547fd4f48bdd212597100619a9fd36b
https://hal-normandie-univ.archives-ouvertes.fr/hal-02184724
https://hal-normandie-univ.archives-ouvertes.fr/hal-02184724
Publikováno v:
ECS Meeting Abstracts. :688-688
Integration and miniaturization of highly reliable electronic devices are the basis of advanced technologies used for the manufacturing of implantable medical systems such as pacemakers or neuronal stimulators. Among these components, passive devices
Autor:
Abdelkader Kahouli, Florent Lallemand, B. Mercey, Ulrike Lüders, Catherine Bunel, Oleg I. Lebedev, Stefan Riedel, Malte Czernohorsky, Wilfrid Prellier, Marwa Ben Elbahri
Publikováno v:
ACS Applied Materials & Interfaces
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2015, 7 (46), pp.25679-25684. ⟨10.1021/acsami.5b06485⟩
ACS Applied Materials & Interfaces, 2015, 7 (46), pp.25679-25684. ⟨10.1021/acsami.5b06485⟩
ACS Applied Materials & Interfaces, Washington, D.C. : American Chemical Society, 2015, 7 (46), pp.25679-25684. ⟨10.1021/acsami.5b06485⟩
ACS Applied Materials & Interfaces, 2015, 7 (46), pp.25679-25684. ⟨10.1021/acsami.5b06485⟩
International audience; Capacitors with a dielectric material consisting of amorphous laminates of Al2O3 and TiO2 with subnanometer individual layer thicknesses can show strongly enhanced capacitance densities compared to the bulk or laminates with n
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::cad0219c8638846797ab3433079bb6d3
https://publica.fraunhofer.de/handle/publica/246369
https://publica.fraunhofer.de/handle/publica/246369
Autor:
Guy Parat, Aude Lefevre, Malte Czernohorsky, Delphine Ferreira, Marc Veillerot, Jean-Paul Barnes, Florent Lallemand
Publikováno v:
Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena. 35:01A111
Metal–insulator–metal (MIM) capacitors with TiN and high thickness of Al2O3 above 50 nm were fabricated to address high voltage (>30 V) and linear capacitor applications. Atomic layer deposition is used to deposit both TiN and Al2O3 to guarantee