Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Florent Dettoni"'
Autor:
Jean Gabriel Simiz, Romain Alestra, Romain Bange, Julien Ducoté, Florent Dettoni, Pierre Fanton
Publikováno v:
Optical and EUV Nanolithography XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fb29045f843c0f7f4064398a23dad6b8
https://doi.org/10.1117/12.2657686
https://doi.org/10.1117/12.2657686
Autor:
Bertrand Le-Gratiet, Régis Bouyssou, Julien Ducoté, Florent Dettoni, Thibaut Bourguignon, Vincent Morin, Romain Bange, Nivea G. Schuch, Julien Nicoulaud, Guillaume Renault, Frederic Robert, Thiago Figueiro
Publikováno v:
Metrology, Inspection, and Process Control XXXVI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6e771354a876eb3a8ff8efccf91f65df
https://doi.org/10.1117/12.2615199
https://doi.org/10.1117/12.2615199
Autor:
B. Le-Gratiet, Maxime Gatefait, Didier Dabernat, Olivier Mermet, Benjamin Duclaux, Florent Dettoni
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXIV.
Advanced nodes require tighter and tighter overlay control to secure products yield. Market like automotive one are even more demanding on “overlay reliability” till the extreme edge of wafers. High order models including Correction per Exposure
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::516f14314f87cd9b7740561f1a77796e
https://doi.org/10.1117/12.2548308
https://doi.org/10.1117/12.2548308
Autor:
Florent Dettoni, Christophe Dezauzier, Richard Johannes Franciscus Van Haren, Jerome Depre, R. Bouyssou, Sergey Tarabrin, Clément Massacrier, Victor Calado
Publikováno v:
Metrology, Inspection, and Process Control for Microlithography XXXII.
With these proceedings we present μ-diffraction-based overlay (μDBO) targets that are well below the currently supported minimum size of 10×10 μm2 . We have been capable of measuring overlay targets as small as 4×4 μm2 with our latest generatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::aec1e7b258844abba2cf64b99d68abf4
https://doi.org/10.1117/12.2297673
https://doi.org/10.1117/12.2297673
Publikováno v:
SPIE Proceedings.
Continuous tightening of the overlay control budget in the semiconductor industry drives the need for improved overlay metrology capabilities. In this context, measurement accuracy needs to be addressed. The first part this study shows that Diffracti
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c00836468e1d79445a79b230f930836f
https://doi.org/10.1117/12.2258206
https://doi.org/10.1117/12.2258206
Autor:
Patrick Amsalem, Margrit Hanbücken, Houda Sahaf, Eric Moyen, Laurence Masson, Norbert Koch, Florent Dettoni
Publikováno v:
Applied Surface Science. 267:192-195
Through silicon deposition onto the silver (1 1 0) surface, we have fabricated in a one-step process a highly perfect nanoscale template consisting of a self-assembled Si nanostripe array with a pitch of 2 nm, covering uniformly the entire surface. S
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ec5efea821bc0e1c95a6468e205adcb
https://doi.org/10.1016/j.apsusc.2012.09.155
https://doi.org/10.1016/j.apsusc.2012.09.155
Publikováno v:
SPIE Proceedings.
Patterning process control of advanced nodes has required major changes over the last few years. Process control needs of critical patterning levels since 28nm technology node is extremely aggressive showing that metrology accuracy/sensitivity must b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::48b50a31ae6de4d7485854ce5bc8a1fb
https://doi.org/10.1117/12.2085757
https://doi.org/10.1117/12.2085757
Autor:
Christophe Dezauzier, M. Besacier, R. Bouyssou, J. Ducote, Alain Ostrovsky, B. Le Gratiet, Cécile Gourgon, D. Carau, Florent Dettoni
Publikováno v:
SPIE Proceedings.
Critical dimension and overlay measurements have become a key challenge in microelectronics process control, and the weight of metrology in the success of a patterning technique is increasing. For the 14 nm node, the limit of scanner resolution can b
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4be0f25afa984bd308a253db87155566
https://doi.org/10.1117/12.2085775
https://doi.org/10.1117/12.2085775
Autor:
Henk-Jan H. Smilde, J. Ducote, Florent Dettoni, Yoann Blancquaert, Lars H. D. Driessen, Jerome Depre, Willy van Buel, Christophe Dezauzier, Jan Beltman, Richard Johannes Franciscus Van Haren
Publikováno v:
SPIE Proceedings.
Scatterometry mark design for improvement of the metrology performance is investigated in this joint work by ASML and STMicroelectronics. The studied marks are small, enabling metrology within the device area. The new mark-design approach reduces the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07964e37cae02b425339175b8742ba1a
https://doi.org/10.1117/12.2085642
https://doi.org/10.1117/12.2085642