Zobrazeno 1 - 10
of 11
pro vyhledávání: '"Florence Madeira"'
Autor:
Florence Madeira, Didier Landru, Oleg Kononchuk, Pauline Ronseaux, Frédéric Mazen, François Rieutord, Samuel Tardif
Publikováno v:
Journal of Applied Physics
Journal of Applied Physics, American Institute of Physics, 2021, 129, pp.185103. ⟨10.1063/5.0047626⟩
Journal of Applied Physics, 2021, 129, pp.185103. ⟨10.1063/5.0047626⟩
Journal of Applied Physics, American Institute of Physics, 2021, 129, pp.185103. ⟨10.1063/5.0047626⟩
Journal of Applied Physics, 2021, 129, pp.185103. ⟨10.1063/5.0047626⟩
International audience; Vibrations induced by crack propagation in a strip of bonded silicon wafers are studied. A new optical setup enables the fast recording of crack-originated acoustic waves, emitted both ahead and behind the crack front, in bond
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e33cdfa6757cc2584f55de365f796023
https://doi.org/10.1063/5.0047626
https://doi.org/10.1063/5.0047626
Autor:
Florence Madeira, Oleg Kononchuk, Frédéric Mazen, Didier Landru, Alexandre Reinhardt, D. Massy, François Rieutord, Samuel Tardif, N. Ben Mohamed
Publikováno v:
Physical Review Letters
Physical Review Letters, 2018, 121 (19), pp.195501. ⟨10.1103/PhysRevLett.121.195501⟩
Physical Review Letters, American Physical Society, 2018, 121 (19), pp.195501. ⟨10.1103/PhysRevLett.121.195501⟩
Physical Review Letters, 2018, 121 (19), pp.195501. ⟨10.1103/PhysRevLett.121.195501⟩
Physical Review Letters, American Physical Society, 2018, 121 (19), pp.195501. ⟨10.1103/PhysRevLett.121.195501⟩
International audience; The interaction of a propagating crack in implanted silicon with self-emitted acoustic waves is studied and reveals the generation of periodic patterns on wafers surfaces after separation. The measurement and identification of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ffe72aa9aa3038aaaa385f7712e46097
https://hal.science/hal-01935677/file/CFIpaper_DM_FR_v4.pdf
https://hal.science/hal-01935677/file/CFIpaper_DM_FR_v4.pdf
Autor:
Anne-Marie Charvet, Christophe Morales, V. Larrey, Frank Fournel, Jean-Marc Fabbri, François Rieutord, G. Audoit, Florence Madeira, E. Beche
Publikováno v:
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.57-65, ⟨10.1149/06405.0057ecst⟩
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.57-65, ⟨10.1149/06405.0057ecst⟩
Direct bonding mechanism of amorphous ALD alumina has been investigated from room temperature up to 1200◦C. By considering the evolution with temperature of free alumina surfaces and bonded configuration we highlight strong interaction between oxid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6a8ab414851ad1404ae87cc9b928ac58
https://doi.org/10.1149/06405.0057ecst
https://doi.org/10.1149/06405.0057ecst
Autor:
Florence Madeira, Frédéric Mazen, Damien Massy, Didier Landru, François Rieutord, Jennifer Ragani
Publikováno v:
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.13-20, ⟨10.1149/06405.0013ecst⟩
13th International Symposium on Semiconductor Wafer Bonding-Science, Technology and Applications as part of the 226th Meeting of the Electrochem Soc, ECS, Oct 2014, Cancun, Mexico. pp.13-20, ⟨10.1149/06405.0013ecst⟩
The Smart Cut™ technology [1] is currently the industry standard for manufacturing Silicon-On-Insulator (SOI) wafers. The implantation of relatively high doses of hydrogen ions in a silicon substrate leads to the formation of a buried weakened laye
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ed6f6db7b1883e2b6808afef09236e85
https://doi.org/10.1149/06405.0013ecst
https://doi.org/10.1149/06405.0013ecst
Autor:
Gweltaz Gaudin, Jean-Sébastien Moulet, Florence Madeira, Helen Grampeix, Frédéric Mazen, Thierry Baron, Sébastien Sollier, Mickael Martin, R. Alcotte, Elodie Beche, Christelle Veytizou, Amélie Salaun, Sylvie Favier, Julie Widiez
Publikováno v:
Japanese Journal of Applied Physics
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩
Japanese Journal of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩
Japanese Journal of Applied Physics, Japan Society of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩
Japanese Journal of Applied Physics, 2016, 55 (4S), pp.04EB10. ⟨10.7567/JJAP.55.04EB10⟩
This paper reports the first demonstration of 300 mm In0.53Ga0.47As-on-insulator (InGaAs-OI) substrates. The use of direct wafer bonding and the Smart Cut™ technology lead to the transfer of high quality InGaAs layer on large Si wafer size (300 mm)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::38e6b056dd8450caa734a0f0800324cf
https://hal.univ-grenoble-alpes.fr/hal-01991862
https://hal.univ-grenoble-alpes.fr/hal-01991862
Autor:
Didier Landru, J. Ragani, Samuel Tardif, Florence Madeira, D. Massy, Oleg Kononchuk, J. D. Penot, Frédéric Mazen, François Rieutord
Publikováno v:
Applied Physics Letters
Applied Physics Letters, American Institute of Physics, 2015, 107 (9), pp.092102. ⟨10.1063/1.4930016⟩
Applied Physics Letters, 2015, 107 (9), pp.092102. ⟨10.1063/1.4930016⟩
Applied Physics Letters, American Institute of Physics, 2015, 107 (9), pp.092102. ⟨10.1063/1.4930016⟩
Applied Physics Letters, 2015, 107 (9), pp.092102. ⟨10.1063/1.4930016⟩
International audience; Crack propagation in implanted silicon for thin layer transfer is experimentally studied. The crack propagation velocity as a function of split temperature is measured using a designed optical setup. Interferometric measuremen
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e610811b8b12069eab7c88c1b3169098
https://hal.archives-ouvertes.fr/hal-01615909
https://hal.archives-ouvertes.fr/hal-01615909
Autor:
Fabrice Lallement, François Rieutord, Chrystel Deguet, F. Gonzatti, Didier Landru, Shay Reboh, Florence Madeira, A. Royal, F. Mazen
Publikováno v:
20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014)
20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), Jun 2014, Portland, United States. pp.1-4, ⟨10.1109/iit.2014.6940054⟩
20TH INTERNATIONAL CONFERENCE ON ION IMPLANTATION TECHNOLOGY (IIT 2014), Jun 2014, Portland, United States. pp.1-4, ⟨10.1109/iit.2014.6940054⟩
International audience; We have studied the impact of the incorporation of a buried and ultrathin layer (i.e a few nm), engineered to trap the implanted hydrogen in the donor substrate, on the silicon layer transfer by Smart Cut TM. Two kinds of buri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f50c8aeaac8ba1ed477cd51e4be86706
https://hal.univ-grenoble-alpes.fr/hal-02016588
https://hal.univ-grenoble-alpes.fr/hal-02016588
Autor:
T. Salvetat, Aurélie Tauzin, Frederic Milesi, N. Rochat, F. P. Luce, Florence Madeira, F. Mazen, J. P. Barnes, Shay Reboh, Chrystel Deguet, E. Vilain
Publikováno v:
2014 20th International Conference on Ion Implantation Technology (IIT).
The evolution of hydrogen-related defects introduced in the InP lattice due to the implantation and subsequent annealing is investigated as a function of the implantation temperature, that was varied from −15 °C to 230 °C. Implanted and annealed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5fcc23b750eecd298c17c9c5ac612d56
https://doi.org/10.1109/iit.2014.6939972
https://doi.org/10.1109/iit.2014.6939972
Autor:
Elodie Beche, Frank Fournel, Vincent Larrey, François Rieutord, Christophe Morales, Anne-Marie Charvet, Florence Madeira, Guillaume Audoit, Jean-Marc Fabbri
Publikováno v:
ECS Meeting Abstracts. :1722-1722
Direct bonding is used to join two mirror-polished wafers without any additional material. This technique demonstrates to be more and more attractive for microelectronics, MEMS, or optoelectronic applications as example. In many of them, Silicon-On-I
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::84346eec532af317bc0a8d43057e058c
https://doi.org/10.1149/ma2014-02/34/1722
https://doi.org/10.1149/ma2014-02/34/1722
Autor:
Shay Reboh, O. Kononchuk, Florence Madeira, Frédéric Mazen, Didier Landru, Jean-Daniel Penot, Luciana Capello, François Rieutord, Damien Massy
Publikováno v:
Journal of Applied Physics. 114:123513
The development of microcracks in hydrogen-implanted silicon has been studied up to the final split using optical microscopy and mass spectroscopy. It is shown that the amount of gas released when splitting the material is proportional to the surface
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b9c092d962197d19bfb50213715d7f17
https://doi.org/10.1063/1.4821239
https://doi.org/10.1063/1.4821239