Výsledky vyhledávání - "Florence Jolly"

Structural and electrical properties of Ta2O5 thin films deposited on Si from Ta(OC2H5)5 precursor

Autor: Luca Lozzi, Vicenzo Salerni, Sandro Santucci, P. Picozzi, Florence Jolly, Maurizio Passacantando

Publikováno v: Journal of Non-Crystalline Solids. 322:233-239

Thin (

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4a3f6b38a4fd94bed285723b6aa73598
https://doi.org/10.1016/s0022-3093(03)00207-2

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Core-electron spectroscopy of nonconjugated linear dienes chemisorbed onSi(001)−2×1with synchrotron radiation

Autor: Florence Jolly, Fausto Sirotti, Fabrice Bournel, Georges Dufour, Piero Torelli, François Rochet

Publikováno v: Physical Review B. 62:7645-7653

The adsorption of two nonconjugated linear dienes, 1,7-octadiene and 1,4-pentadiene, on $\mathrm{Si}(001)\ensuremath{-}2\ifmmode\times\else\texttimes\fi{}1$ is studied using soft x-ray photoemission spectroscopy (XPS), C $1s$ near-edge x-ray absorpti

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4e0f4b74d1ed691aaf42ae6bb8e322ec
https://doi.org/10.1103/physrevb.62.7645

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Ethylene onSi(001)−2×1andSi(111)−7×7: X-ray photoemission spectroscopy with synchrotron radiation

Autor: Georges Dufour, Jean-Louis Cantin, Fabrice Bournel, Fausto Sirotti, Florence Jolly, François Rochet

Publikováno v: Physical Review B. 58:11029-11042

The adsorption of ethylene on $\mathrm{Si}(001)\ensuremath{-}2\ifmmode\times\else\texttimes\fi{}1$ and $\mathrm{Si}(111)\ensuremath{-}7\ifmmode\times\else\texttimes\fi{}7$ has been studied at 300 K using core-level (Si $2p,$ C $1s)$ and valence-band

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::49f65e88d9109a1ee6a029773c89768a
https://doi.org/10.1103/physrevb.58.11029

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XPS Studies of the Si/SiO2Interface With Synchrotron Radiation

Autor: Georges Dufour, C. Grupp, A. Taleb-Ibrahimi, François Rochet, Florence Jolly

Publikováno v: MRS Proceedings. 592

Si 2pcore-level spectroscopy is a unique tool to determine the chemical composition and spatial extension of the suboxide layer present at the Si/SiO2interface. In the case of ultra-thin oxide films (thickness n+(withn=1,…,4). After a brief review

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::6b5b68c1109a05d59442f52d41dd9c74
https://doi.org/10.1557/proc-592-51

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