Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Floating gate memories"'
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 7, Iss 2, Pp 141-149 (2021)
Embedding advanced cognitive capabilities in battery-constrained edge devices requires specialized hardware with new circuit architecture and—in the medium/long term—new device technology. We evaluate the potential of recently investigated device
Externí odkaz:
https://doaj.org/article/913fd2d8c30e4ac4b2a9d43aad822ebd
Akademický článek
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Akademický článek
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Akademický článek
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Autor:
Giorgio Cellere, Alessandro Paccagnella, Angelo Visconti, Simone Gerardin, Marta Bagatin, M. Bonanomi
Publikováno v:
Microelectronics Reliability. 50:1837-1841
We studied the impact of previous X-ray irradiation on the sensitivity of floating gate cells to heavy-ion upsets, to emulate the concurrent occurrence of both total ionizing dose and single event effects in the space environment. An increasing heavy
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d9da042ae1f53edbec2738da6a0e412b
https://doi.org/10.1016/j.microrel.2010.07.142
https://doi.org/10.1016/j.microrel.2010.07.142
Autor:
S. Beltrami, Marta Bagatin, Giorgio Cellere, Simone Gerardin, Reno Harboe-Sorensen, Alessandro Paccagnella, Ari Virtanen, Angelo Visconti
Publikováno v:
IEEE Transactions on Nuclear Science. 55:3302-3308
Heavy-ion irradiation of NAND flash memories under operating conditions leads to errors with complex, data-dependent signatures. We present upsets due to hits in the floating gate array and in the peripheral circuitry, discussing their peculiarities
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::5376ab4fd085007d5c4eb5fdc9da95e7
https://doi.org/10.1109/tns.2008.2007905
https://doi.org/10.1109/tns.2008.2007905
Autor:
Christopher D. Frost, Simone Gerardin, Luca Chiavarone, Marcello Calabrese, Alessandro Paccagnella, Marta Bagatin, Angelo Visconti
Publikováno v:
2014 IEEE International Reliability Physics Symposium.
We study the effects of exposure to accelerated neutron beams of Floating Gate (FG) Flash memories with NOR architecture. Error rates as well as threshold voltage shifts are examined and mechanisms are discussed. A comparison with NAND Flash memories
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::4e099cba329f16fc0a1953ba1c1d6d63
https://doi.org/10.1109/irps.2014.6861094
https://doi.org/10.1109/irps.2014.6861094
Autor:
Christopher D. Frost, Veronique Ferlet-Cavrois, S. Beltrami, Alessandro Paccagnella, Angelo Visconti, M. Bonanomi, Marta Bagatin, Simone Gerardin
We analyzed the sensitivity of 45-nm phase change memory cells to neutrons and heavy ions. No errors have been recorded with neutrons with a terrestrial-like spectrum. With heavy ions, bit upsets have been observed at high incidence angle and high li
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::ba4082117e1dfba56d21b18500ed85d1
http://hdl.handle.net/11577/2932104
http://hdl.handle.net/11577/2932104
Autor:
A. Modelli, Alessandro Paccagnella, Paolo Pellati, Giorgio Cellere, A. Chimenton, Luca Larcher, J. Wyss
Publikováno v:
IEEE Transactions on Nuclear Science. 48:2222-2228
We have addressed the problem of threshold voltage (V/sub TH/) variation in flash memory cells after heavy-ion irradiation by using specially designed array structures and test instruments. After irradiation, low V/sub TH/ tails appear in V/sub TH/ d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::8f1322b6c242c6f99dd8b6ff655cf070
https://doi.org/10.1109/23.983199
https://doi.org/10.1109/23.983199
Publikováno v:
2012 IEEE International Reliability Physics Symposium (IRPS).
We study the sensitivity to alpha particles of state-of-the-art Multi-Level Cell (MLC) and Single-Level Cell (SLC) NAND Floating Gate (FG) flash memories with NAND architecture. We show that starting from a feature size of 50 nm, MLC flash memories a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::33caddd5f907ce0f1fd54c1888e91372
https://doi.org/10.1109/irps.2012.6241811
https://doi.org/10.1109/irps.2012.6241811