Zobrazeno 1 - 10
of 2 898
pro vyhledávání: '"Floating gate"'
Autor:
Jun Yu, Jiawei Fu, Hongcheng Ruan, Han Wang, Yimeng Yu, Jinpeng Wang, Yuhui He, Jinsong Wu, Fuwei Zhuge, Ying Ma, Tianyou Zhai
Publikováno v:
InfoMat, Vol 6, Iss 10, Pp n/a-n/a (2024)
Abstract Local phase transition in transition metal dichalcogenides (TMDCs) by lithium intercalation enables the fabrication of high‐quality contact interfaces in two‐dimensional (2D) electronic devices. However, controlling the intercalation of
Externí odkaz:
https://doaj.org/article/d88e949867c44659a6d3894fbd7db200
Publikováno v:
Yuanzineng kexue jishu, Vol 57, Iss 12, Pp 2264-2273 (2023)
In order to investigate the influence of heavy ion fluence on single event upsets (SEU) and the SEU cross-section in NAND Flash memory, as well as the multiple-cell upsets (MCU) due to heavy ion irradiation, experimental studies were performed on two
Externí odkaz:
https://doaj.org/article/0c7f877d732b4b7d9426a46d383b4234
Autor:
Ruipeng Lv, Huiqin Sun, Longfei Yang, Zhen Liu, Yuanhao Zhang, Yuan Li, Yong Huang, Zhiyou Guo
Publikováno v:
Results in Physics, Vol 59, Iss , Pp 107526- (2024)
This article demonstrates the effect of reverse gradient barrier layer and floating gate structure on DC and RF performance of GaN-based HEMTs. In terms of power characteristics, using reverse gradient barrier and floating gate, the GaN-HEMTs with Lg
Externí odkaz:
https://doaj.org/article/d69fa3102cf24b35b4066813bde57934
A Dual‐Mode Programing Nonvolatile Floating‐Gate Memory with Convertible Ohmic and Schottky Contacts
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 3, Pp n/a-n/a (2024)
Abstract Research on van der Waals heterostructures based on stacked two‐dimensional atomic thickness crystals has received considerable attention because of their unique characters and great potential applications in flexible transparent electroni
Externí odkaz:
https://doaj.org/article/73209c1621ac449797ad5e97a13e44b6
Autor:
Thinh Dang Cong, Trang Hoang
Publikováno v:
Heliyon, Vol 10, Iss 4, Pp e26496- (2024)
An automatic programming tool has become an essential component in virtual fabrication in recent years. This paper aims to propose a methodology of virtual fabrication for semiconductor devices and design a tool called Technology Computer-Aided Desig
Externí odkaz:
https://doaj.org/article/5d9650a35c7e44bd9700dcafc9af93cd
Autor:
Daobing Zeng, Rongxiang Ding, Guanyu Liu, Huihui Lu, Miao Zhang, Zhongying Xue, Ziao Tian, Zengfeng Di
Publikováno v:
Advanced Electronic Materials, Vol 10, Iss 2, Pp n/a-n/a (2024)
Abstract Developing 2D reconfigurable multifunctional devices is of great potential in further miniaturizing the chip area and simplifying circuit design. 2D van der Waals (vdW) heterostructures offer a novel approach to realizing reconfigurable mult
Externí odkaz:
https://doaj.org/article/d7e416549bbf49608a38924cdca7a8d2
Publikováno v:
Chip, Vol 2, Iss 4, Pp 100059- (2023)
ABSTRACT: With the advent of the “Big Data Era”, improving data storage density and computation speed has become more and more urgent due to the rapid growth in different types of data. Flash memory with a floating gate (FG) structure is attracti
Externí odkaz:
https://doaj.org/article/fbdd69537b4e4b5ca241766814a25eea
Autor:
Muhammad Asghar Khan, Sungbin Yim, Shania Rehman, Faisal Ghafoor, Honggyun Kim, Harshada Patil, Muhammad Farooq Khan, Jonghwa Eom
Publikováno v:
Materials Today Advances, Vol 20, Iss , Pp 100438- (2023)
Emerging technologies such as neuromorphic computing and nonvolatile memories based on floating gate field-effect transistors (FETs) hold promise for addressing a wide range of artificial intelligence tasks. For example, neuromorphic computing seeks
Externí odkaz:
https://doaj.org/article/be21fdb3bf47419caa399d19ab448840
Publikováno v:
Memories - Materials, Devices, Circuits and Systems, Vol 6, Iss , Pp 100090- (2023)
In this study, a floating-gate field-effect transistor (FGFET) structure is proposed and verified through simulations. Current memory devices often rely on the von Neumann architecture which suffers from von Neumann bottleneck. The proposed FGFET is
Externí odkaz:
https://doaj.org/article/18cad5cb088548bd82651c68c7f8e590