Zobrazeno 1 - 10
of 427
pro vyhledávání: '"Flint, CL"'
Autor:
Williams,, Frank B.
Publikováno v:
Tennessee Historical Quarterly, 2001 Oct 01. 60(3), 195-198.
Externí odkaz:
https://www.jstor.org/stable/42627653
Autor:
Chandrasena, Ru, Flint, Cl, Yang, W, Arab, A, Namsak, S, Gehlmann, M, Ozdol, Vb, Bisti, F, Wijesekara, Kd, Meyer-Ilse, J, Gullikson, E, Arenholz, E, Ciston, J, Schneider, Cm, Strocov, Vn, Suzuki, Y, Gray, Ax
Publikováno v:
Physical Review B, vol 98, iss 15
Chandrasena, RU; Flint, CL; Yang, W; Arab, A; Nemšák, S; Gehlmann, M; et al.(2018). Depth-resolved charge reconstruction at the LaNiO3/CaMnO3 interface. Physical Review B, 98(15). doi: 10.1103/PhysRevB.98.155103. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/35c5r96d
Chandrasena, RU; Flint, CL; Yang, W; Arab, A; Nemšák, S; Gehlmann, M; et al.(2018). Depth-resolved charge reconstruction at the LaNiO3/CaMnO3 interface. Physical Review B, 98(15). doi: 10.1103/PhysRevB.98.155103. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/35c5r96d
© 2018 American Physical Society. Rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::70e6e70ca3518f52d8291305fb35b1d0
https://escholarship.org/uc/item/35c5r96d
https://escholarship.org/uc/item/35c5r96d
Publikováno v:
Physical Review Materials, vol 3, iss 6
Emergent properties of complex oxide interfaces are based on interface reconstruction that is driven by mismatch of electronic bands, valence states, interaction lengths, and even crystal symmetry of the interface. In particular, emergent ferromagnet
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=dedup_wf_001::c987fd3735b74d5256c46b4e98dade1a
https://escholarship.org/uc/item/4kh2h0cn
https://escholarship.org/uc/item/4kh2h0cn
Autor:
Yi, D, Flint, CL, Balakrishnan, PP, Mahalingam, K, Urwin, B, Vailionis, A, N'Diaye, AT, Shafer, P, Arenholz, E, Choi, Y, Stone, KH, Chu, JH, Howe, BM, Liu, J, Fisher, IR, Suzuki, Y
Publikováno v:
Yi, D; Flint, CL; Balakrishnan, PP; Mahalingam, K; Urwin, B; Vailionis, A; et al.(2017). Tuning Perpendicular Magnetic Anisotropy by Oxygen Octahedral Rotations in (La1-xSrxMnO3)/ (SrIrO3) Superlattices. Physical Review Letters, 119(7). doi: 10.1103/PhysRevLett.119.077201. Lawrence Berkeley National Laboratory: Retrieved from: http://www.escholarship.org/uc/item/7130k5s3
© 2017 American Physical Society. American Physical Society. Perpendicular magnetic anisotropy (PMA) plays a critical role in the development of spintronics, thereby demanding new strategies to control PMA. Here we demonstrate a conceptually new typ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______325::0c086089d0a4647b65b3c5bbaabcb506
http://www.escholarship.org/uc/item/7130k5s3
http://www.escholarship.org/uc/item/7130k5s3
Autor:
Medina dos Santos, Nathalia1 (AUTHOR) nathmedina1@gmail.com, Batista, Ângela Giovana2 (AUTHOR), Padilha Mendonça, Monique Culturato3 (AUTHOR), Figueiredo Angolini, Célio Fernando4 (AUTHOR), Grimaldi, Renato5 (AUTHOR), Pastore, Glaucia Maria4 (AUTHOR), Sartori, César Renato6 (AUTHOR), Alice da Cruz-Höfling, Maria3 (AUTHOR), Maróstica Júnior, Mário Roberto1 (AUTHOR) mario@fea.unicamp.br
Publikováno v:
Nutritional Neuroscience. Jan2024, Vol. 27 Issue 1, p55-65. 11p.
Autor:
Yi D; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of Applied Physics, Stanford University, Stanford, California 94305, USA., Flint CL; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of MSE, Stanford University, Stanford, California 94305, USA., Balakrishnan PP; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of Physics, Stanford University, Stanford, California 94305, USA., Mahalingam K; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA., Urwin B; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA., Vailionis A; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA., N'Diaye AT; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA., Shafer P; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA., Arenholz E; Advanced Light Source, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA., Choi Y; Advanced Photon Source, Argonne National Laboratory, Argonne, Illinois 60439, USA., Stone KH; SSRL, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA., Chu JH; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.; SIMES, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA., Howe BM; Materials and Manufacturing Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433, USA., Liu J; Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA., Fisher IR; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.; SIMES, SLAC National Accelerator Laboratory, Menlo Park, California 94025, USA., Suzuki Y; Geballe Laboratory for Advanced Materials, Stanford University, Stanford, California 94305, USA.; Department of Applied Physics, Stanford University, Stanford, California 94305, USA.
Publikováno v:
Physical review letters [Phys Rev Lett] 2017 Aug 18; Vol. 119 (7), pp. 077201. Date of Electronic Publication: 2017 Aug 14.
Akademický článek
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Autor:
Grutter AJ; Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.; NIST Center for Neutron Research, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States.; Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States., Vailionis A; Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States., Borchers JA; NIST Center for Neutron Research, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States., Kirby BJ; NIST Center for Neutron Research, National Institute of Standards and Technology , Gaithersburg, Maryland 20899, United States., Flint CL; Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.; Department of Materials Science and Engineering, Stanford University , Stanford, California 94305, United States., He C; Department of Materials Science and Engineering, University of California , Berkeley, California 94720, United States., Arenholz E; Advanced Light Source, Lawrence Berkeley National Laboratory , Berkeley, California 94720, United States., Suzuki Y; Geballe Laboratory for Advanced Materials, Stanford University , Stanford, California 94305, United States.; Department of Applied Physics, Stanford University , Stanford, California 94305, United States.
Publikováno v:
Nano letters [Nano Lett] 2016 Sep 14; Vol. 16 (9), pp. 5647-51. Date of Electronic Publication: 2016 Aug 08.
Akademický článek
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