Výsledky vyhledávání - "Fletcher, N A"

Akademický článek

Back-table fenestrated endograft limb inversion for type Ia endoleak repair

Autor: Fletcher N. Pierce, BA, Ahmed Raza, MD, Hilary McKinley, DO, Animesh Rathore, MBBS

Publikováno v: Journal of Vascular Surgery Cases and Innovative Techniques, Vol 9, Iss 4, Pp 101358- (2023)

We present a case of a type Ia endoleak from an aortic endograft in close proximity to the renal arteries that was successfully treated with a back-table physician-modified endograft with inversion of the contralateral limb. This modification allowed

Externí odkaz: https://doaj.org/article/bf44dd34cdcf47d69fa6bd4b1ba0e64a

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Precision comparison of the quantum Hall effect in graphene and gallium arsenide

Autor: Janssen, T. J. B. M., Williams, J. M., Fletcher, N. E., Goebel, R., Tzalenchuk, A., Yakimova, R., Lara-Avila, S., Kubatkin, S., Fal'ko, V. I.

Publikováno v: Metrologia 49 (2012) 294-306

The half-integer quantum Hall effect in epitaxial graphene is compared with high precision to the well known integer effect in a GaAs/AlGaAs heterostructure. We find no difference between the quantised resistance values within the relative standard u

Externí odkaz: http://arxiv.org/abs/1202.2985

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Graphene, universality of the quantum Hall effect and redefinition of the SI system

Autor: Janssen, T. J. B. M., Fletcher, N. E., Goebel, R., Williams, J. M., Tzalenchuk, A., Yakimova, R., Kubatkin, S., Lara-Avila, S., Falko, V. I.

Publikováno v: New Journal of Physics, 13 (2011) 093026

The Syst\`eme Internationale d'unit\'es (SI system) is about to undergo its biggest change in half a century by redefining the units for mass and current in terms of the fundamental constants h and e, respectively. This change crucially relies on the

Externí odkaz: http://arxiv.org/abs/1105.4055

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Quantized charge pumping through a quantum dot by surface acoustic waves

Autor: Ebbecke, J., Fletcher, N. E., Janssen, T. J. B. M., Ahlers, F. J., Pepper, M., Beere, H. E., Ritchie, D. A.

We present a realization of quantized charge pumping. A lateral quantum dot is defined by metallic split gates in a GaAs/AlGaAs heterostructure. A surface acoustic wave whose wavelength is twice the dot length is used to pump single electrons through

Externí odkaz: http://arxiv.org/abs/cond-mat/0312304

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Quantized charge transport through a static quantum dot using a surface acoustic wave

Autor: Fletcher, N. E., Ebbecke, J., Janssen, T. J. B. M., Ahlers, F. J., Pepper, M., Beere, H. E., Ritchie, D. A.

We present a detailed study of the surface acoustic wave mediated quantized transport of electrons through a split gate device containing an impurity potential defined quantum dot within the split gate channel. A new regime of quantized transport is

Externí odkaz: http://arxiv.org/abs/cond-mat/0308402

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