Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Flavien Cozette"'
Autor:
Thi Huong Ngo, Rémi Comyn, Sébastien Chenot, Julien Brault, Maud Nemoz, Philippe Vennéguès, Benjamin Damilano, Stéphane Vézian, Eric Frayssinet, Flavien Cozette, Nicolas Defrance, François Lecourt, Nathalie Labat, Hassan Maher, Yvon Cordier
Publikováno v:
Journal of Crystal Growth
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
Journal of Crystal Growth, 2022, 593, pp.126779. ⟨10.1016/j.jcrysgro.2022.126779⟩
International audience; In the present study, the selective sublimation of the p-GaN cap layer of Al(Ga)N/GaN HEMTs is developed to replace the commonly used dry etching with no risk of damage in the barrier layer in order to fabricate enhanced mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::e99464295d6e8d6fbdb725e1ac0d3f14
https://hal.science/hal-03741626
https://hal.science/hal-03741626
Autor:
Nicolas Defrance, Thi Huong Ngo, Eric Frayssinet, Benjamin Damilano, Flavien Cozette, Rémi Comyn, Stéphane Vézian, Hassan Maher, Julien Brault, Nathalie Labat, F. Lecourt, Yvon Cordier, Sébastien Chenot
Publikováno v:
Solid-State Electronics
Solid-State Electronics, Elsevier, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Solid-State Electronics, Elsevier, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
Solid-State Electronics, 2022, 188, pp.108210. ⟨10.1016/j.sse.2021.108210⟩
International audience; We report on the fabrication of an enhancement mode p-GaN/AlN/GaN high electron mobility transistor with selective area sublimation under vacuum of the p-GaN cap layer. The GaN evaporation selectivity is demonstrated on the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::f0dc6ed5afd72a29615ac084fc919dcf
https://hal.archives-ouvertes.fr/hal-03467546
https://hal.archives-ouvertes.fr/hal-03467546
Autor:
Christophe Rodriguez, Francois Boone, Ali Soltani, Adrien Cutivet, Bilal Hassan, Flavien Cozette, Hassan Maher
Publikováno v:
BCICTS
This paper reports on scalable small signal modeling of AlGaN/GaN high-electron-mobility transistors (HEMTs) based on distributed gate resistance model. A distributed gate resistance model (DGRM) is used to model large periphery of GaN HEMT with vari
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ca444cccf786dbaeb68324ff42c4d070
https://doi.org/10.1109/bcicts45179.2019.8972776
https://doi.org/10.1109/bcicts45179.2019.8972776
Autor:
Flavien Cozette, Nathalie Labat, Benjamin Damilano, Stéphane Vézian, Sébastien Chenot, F. Lecourt, Nicolas Defrance, Eric Frayssinet, Yvon Cordier, Julien Brault, Rémi Comyn, Hassan Maher, Christophe Rodriguez, Ngo Thi Huong
Publikováno v:
Semiconductor Science and Technology
Semiconductor Science and Technology, IOP Publishing, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Semiconductor Science and Technology, IOP Publishing, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
Semiconductor Science and Technology, 2021, 36 (2), pp.024001. ⟨10.1088/1361-6641/abcbd3⟩
In this paper, we report on the fabrication of a normally-off Al(Ga)N/GaN high electron mobility transistor with selective area sublimation under vacuum of the p type doped GaN cap layer. This soft method makes it possible to avoid damages otherwise
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::69ae6aa826c48cf5ff5b41e9f97f08b4
https://doi.org/10.1088/1361-6641/abcbd3
https://doi.org/10.1088/1361-6641/abcbd3
Autor:
Hassan Maher, Jean Claude De Jaeger, Adrien Cutivet, Flavien Cozette, Michel Rousseau, Marie Lesecq, Nicolas Defrance
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩
IEEE Electron Device Letters, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩
IEEE Electron Device Letters, 2018, 39 (10), pp.1-1. ⟨10.1109/LED.2018.2864643⟩
This letter describes a new method to extract the operating temperature in short-gate length AlGaN/GaN high electron mobility transistors (HEMTs) dedicated to RF applications. For this goal, a nickel resistive sensor is integrated into the HEMT activ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::504435fe6689c7257fc3bd1328936db6
https://hal.archives-ouvertes.fr/hal-02273384
https://hal.archives-ouvertes.fr/hal-02273384
Autor:
Flavien Cozette, Jean-Claude De Jaeger, Adrien Cutivet, Meriem Bouchilaoun, Ahmed Chakroun, Hassan Maher, Marie Lesecq, Osvaldo Arenas, Abdelatif Jaouad, Francois Boone
Publikováno v:
IEEE Electron Device Letters
IEEE Electron Device Letters, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
IEEE Electron Device Letters, Institute of Electrical and Electronics Engineers, 2017, 38 (2), pp.240-243. ⟨10.1109/LED.2016.2641740⟩
International audience; This paper reports on a new method for the characterization of transistors transient self-heating based on gate end-to-end resistance measurement. An alternative power signal is injected to the device output (between drain and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::55dc06dc3e40e48b792d129f717117b5
https://hal.science/hal-01914376/document
https://hal.science/hal-01914376/document