Zobrazeno 1 - 5
of 5
pro vyhledávání: '"Flavia S. Fong"'
Publikováno v:
IEEE Microwave and Wireless Components Letters. 21:46-48
A compact ultra-wideband Wilkinson power combiner/divider is first demonstrated using a hermetic multi-wafer wafer level packaging technology. Its bandwidth is broadened to around 2-22 GHz with a maximum VSWR around 2:1, by using a multi-section desi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::31e4a23e20c6574cf995f2a491d80e8d
https://doi.org/10.1109/lmwc.2010.2091262
https://doi.org/10.1109/lmwc.2010.2091262
Publikováno v:
IEEE Microwave and Wireless Components Letters. 20:474-476
In this paper, we demonstrate an ultra-wideband MMIC Marchand balun that utilizes a two-layer benzocyclobutene (BCB) GaAs MMIC process with a total of 4 metal layers. This multi-metal technology is built upon a standard GaAs HEMT technology with full
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1f912c6de72eb15fab106243d2826668
https://doi.org/10.1109/lmwc.2010.2050302
https://doi.org/10.1109/lmwc.2010.2050302
Autor:
YaoChung Chen, Xing Lan, Mike Wojtowicz, Ioulia Smorchkova, Benjamin Heying, Flavia S. Fong, Mark Kintis, M. Truong
Publikováno v:
IEEE Microwave and Wireless Components Letters. 18:407-409
A V-band push-push GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) has been realized based on a 0.2 mum T-gate AlGaN/GaN high electron mobility transistor technology with an fT ~ 65 GHz. The GaN VCO delivered an output
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::688dbd953aaf77f0570c94d23932ec0d
https://doi.org/10.1109/lmwc.2008.922660
https://doi.org/10.1109/lmwc.2008.922660
Publikováno v:
IEEE Microwave and Wireless Components Letters. 17:454-456
We present a novel nonlinear transmission line (NLTL) pulse generator using dual-NLTL, true-time-delay, waveform-alignment technique, realized in Gallium Arsenide (GaAs) monolithic microwave integrated circuit (MMIC) technology. The diodes in these t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae63c0a13d6d37628dbf28574477560b
https://doi.org/10.1109/lmwc.2007.897799
https://doi.org/10.1109/lmwc.2007.897799
Autor:
Robert Coffie, M. Truong, Mike Wojtowicz, Ioulia Smorchkova, Flavia S. Fong, R. Tsai, Thomas Wong, A. Oki, Xing Lan, Ben Heying, Mark Kintis, C. Namba
Publikováno v:
IEEE Microwave and Wireless Components Letters. 16:425-427
A Q-band 40-GHz GaN monolithic microwave integrated circuit voltage controlled oscillator (VCO) based on AlGaN/GaN high electron mobility transistor technology has been demonstrated. The GaN VCO delivered an output power of +25dBm with phase noise of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::089909c63990e1721d2564d7f07a6ca8
https://doi.org/10.1109/lmwc.2006.877128
https://doi.org/10.1109/lmwc.2006.877128