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Autor:
Jean-Charles Barbe, Caroline Curfs, Sofiane Guissi, Perrine Batude, Benjamin Colombeau, B. Mathieu, Clement Tavernier, Sylvain Joblot, Ignacio Martin-Bragado, Benoit Sklenard, Flavia Piegas Luce, Anthony Payet, Patrice Gergaud
Publikováno v:
Materials Science in Semiconductor Processing. 42:247-250
The amorphization by implantation of strained silicon–germanium epitaxial layers is investigated by experiments and simulation according to the germanium content in the film and the implantation conditions. Experimental results are used to calibrat
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3e311f6351770d97b2f4cf974f2024e3
https://doi.org/10.1016/j.mssp.2015.07.059
https://doi.org/10.1016/j.mssp.2015.07.059
