Zobrazeno 1 - 10
of 764
pro vyhledávání: '"Flandre Denis"'
SRAM bitcells in retention mode behave as autonomous stochastic nonlinear dynamical systems. From observation of variability-aware transient noise simulations, we provide an unidimensional model, fully characterizable by conventional deterministic SP
Externí odkaz:
http://arxiv.org/abs/2402.11691
Stability of ultra-low-voltage SRAM bitcells in retention mode is threatened by two types of uncertainty: process variability and intrinsic noise. While variability dominates the failure probability, noise-induced bit flips in weakened bitcells lead
Externí odkaz:
http://arxiv.org/abs/2402.11685
Autor:
Roisin, Nicolas, Colla, Marie-Stéphane, Scaffidi, Romain, Pardoen, Thomas, Flandre, Denis, Raskin, Jean-Pierre
A theoretical study of the band gap reduction under tensile stress is performed and validated through experimental measurements. First-principles calculations based on density functional theory (DFT) are performed for uniaxial stress applied in the [
Externí odkaz:
http://arxiv.org/abs/2308.10730
Publikováno v:
IEEE Journal of Solid-State Circuits, vol. 58, no. 8, pp. 2239-2251, Aug. 2023
In many applications, the ability of current references to cope with process, voltage, and temperature (PVT) variations is critical to maintaining system-level performance. However, temperature-independent current references operating in the nA range
Externí odkaz:
http://arxiv.org/abs/2302.04504
Autor:
Francis Laurent A., Sedki Amor, André Nicolas, Kilchytska Valéria, Gérard Pierre, Ali Zeeshan, Udrea Florin, Flandre Denis
Publikováno v:
EPJ Web of Conferences, Vol 170, p 01006 (2018)
In this paper, we study the recovery of onmembrane semiconductor components, such as N-type Field-Effect Transistors (FETs) available in two different channel widths and a Complementary Metal-Oxide-Semiconductor (CMOS) inverter, after the exposure to
Externí odkaz:
https://doaj.org/article/51b155501190478caee328787b352a38
This work presents how first-principles simulations validated through experimental measurements lead to a new accurate prediction of the expected Raman shift as a function of strain in silicon. Structural relaxation of a strained primitive cell is fi
Externí odkaz:
http://arxiv.org/abs/2212.03049
Autor:
Scaffidi, Romain, Gong, Yuancai, Jimenez-Arguijo, Alex, Medaille, Axel Gon, Suresh, Sunil, Brammertz, Guy, Giraldo, Sergio, Puigdollers, Joaquim, Flandre, Denis, Vermang, Bart, Saucedo, Edgardo
Publikováno v:
In Materials Today Energy December 2024 46
Publikováno v:
Sensors Actuators A Phys., vol. 339, p. 113491, 2022
A strain sensor inspired by a Widlar self-biased current source topology called $\beta$-multiplier is developed to obtain a strain-dependent reference current with high supply rejection. The sensor relies on the piezoresistive effect in the silicon M
Externí odkaz:
http://arxiv.org/abs/2201.13352
Autor:
Roisin, Nicolas, Brunin, Guillaume, Rignanese, Gian-Marco, Flandre, Denis, Raskin, Jean-Pierre
Publikováno v:
J. Appl. Phys. 130, 055105 (2021)
The optical properties of silicon can be greatly tuned by applying strain and opening new perspectives, particularly in applications where infrared is key. In this work, we use a recent model for the indirect light absorption of silicon and include t
Externí odkaz:
http://arxiv.org/abs/2108.07624
Publikováno v:
In Solid State Electronics April 2024 214