Substrate dependent mobility and strain effects for silicon and SiGe transistor channels with HKMG first stacks

Autor: Flachowsky, S., Herrmann, T., Höntschel, J., Illgen, R., Ong, S.Y., Wiatr, M.

Publikováno v: In Solid State Electronics October 2013 88:27-31

Correlation between the macroscopic ferroelectric material properties of Si:HfO2 and the statistics of 28nm FeFET memory arrays

Autor: Mueller, S., Slesazeck, S., Henker, S., Flachowsky, S., Polakowski, P., Paul, J., Smith, E., Müller, J., Mikolajick, T.

With the discovery of ferroelectric hafnium oxide (FE-HfO2), the ferroelectric field effect transistor (FeFET), a long-term contender for non-volatile data storage, has finally managed to scale to the 2x nm technology node. Here for the first time, w

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od_______610::05152937a47f72fed509a8db87ab2f7d
https://publica.fraunhofer.de/handle/publica/244281

Next-generation ferroelectric memories based on FE-HfO2.

Autor: Mueller, S., Slesazeck, S., Mikolajick, T., Muller, J., Polakowski, P., Flachowsky, S.

Publikováno v: 2015 Joint IEEE International Symposium on the Applications of Ferroelectric (ISAF), International Symposium on Integrated Functionalities (ISIF) & Piezoelectric Force Microscopy Workshop (PFM); 2015, p233-236, 4p

Mobility and strain effects for <100> and <110> oriented silicon and SiGe transistor channels.

Autor: Flachowsky, S., Herrmann, T., Hontschel, J., Illgen, R., Ong, Shiang Yang, Wiatr, M., Baldauf, T., Klix, W., Stenzel, R.

Publikováno v: 2012 13th International Conference on Ultimate Integration on Silicon (ULIS); 1/ 1/2012, p5-8, 4p

Simulation and optimization of Tri-Gates in a 22 nm hybrid Tri-Gate/planar process.

Autor: Baldauf, T., Wei, A., Illgen, R., Flachowsky, S., Herrmann, T., Feudel, T., Ho?ntschel, J., Horstmann, M., Klix, W., Stenzel, R.

Publikováno v: 2011 12th International Conference on Ultimate Integration on Silicon (ULIS); 2011, p1-4, 4p